SFH628A, SFH6286
www.vishay.com Vishay Semiconductors
Rev. 2.1, 28-Feb-14 2Document Number: 83722
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current IF± 50 mA
Surge forward current t ≤ 10 μs IFSM ± 2.5 A
Power dissipation Pdiss 76 mW
OUTPUT
Collector emitter voltage VCEO 55 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
tp ≤ 1 ms IC100 mA
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage VISO 5300 VRMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Insulation thickness between ≥ 0.4 mm
Comparative tracking index per DIN IEC112/ 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg -55 to +150 °C
Ambient temperature range Tamb -55 to +100 °C
Soldering temperature (1) max. 10 s, dip soldering distance Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = ± 5 mA VF1.1 1.5 V
Capacitance VR = 0 V, f = 1 MHz CO45 pF
Thermal resistance Rthja 1070 K/W
OUTPUT
Collector emitter leakage current VCE = 10 V ICEO 10 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 7pF
Thermal resistance Rthja 500 K/W
COUPLER
Collector emitter saturation
voltage
IF = ± 1 mA, IC = 0.5 mA SFH628A-2 VCEsat 0.25 0.4 V
SFH6286-2 VCEsat 0.25 0.4 V
IF = ± 1 mA, IC = 0.8 mA SFH628A-3 VCEsat 0.25 0.4 V
SFH6286-3 VCEsat 0.25 0.4 V
IF = ± 1 mA, IC = 1.25 mA SFH628A-4 VCEsat 0.25 0.4 V
SFH6286-4 VCEsat 0.25 0.4 V