500 A
THYRISTOR / DIODE and
THYRISTOR / THYRISTOR
Bulletin I27401 rev. A 09/97
1
IRK.500.. SERIES
SUPER MAGN-A-pak TM Power Modules
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Features
High current capability
3000 VRMS isolating voltage with non-toxic substrate
High surge capability
Industrial standard package
UL E78996 approved
Typical Applications
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Major Ratings and Characteristics
Parameters IRK.500.. Units
IT(AV) or IF(AV) 500 A
@ TC 82 °C
IT(RMS) 785 A
@ TC 82 °C
ITSM or IFSM @ 50Hz 17.8 KA
@ 60Hz 18.7 KA
I2t @ 50Hz 1591 KA2s
@ 60Hz 1452 KA2s
I2√t 15910 KA2√s
VDRM
/VRRM range 800 to 1600 V
TSTG range - 40 to 150 °C
TJ range - 40 to 130 °C
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IRK.500.. Series
2
Bulletin I27401 rev. A 09/97
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/IDRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
V V mA
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
IRK.500.. 100
IT(AV) Maximum average on-state current 500 A 180° conduction, half sine wave
IF(AV) @ Case temperature 82 °C
IT(RMS) Maximum RMS on-state current 785 A 180° conduction, half sine wave @ TC = 82°C
ITSM Maximum peak, one-cycle, 17.8 KA t = 10ms No voltage
IFSM non-repetitive surge current 18.7 t = 8.3ms reapplied
15.0 t = 10ms 100% VRRM
15.7 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 1591 KA2s t = 10ms No voltage Initial TJ = TJ max.
1452 t = 8.3ms reapplied
1125 t = 10ms 100% VRRM
1027 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 15910 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage 0.85 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage 0.93 (I > π x IT(AV)), TJ = TJ max.
rt1 Low level value of on-state slope resistance 0.36 m Ω (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
rt2 High level value of on-state slope resistance 0.32 (I > π x IT(AV)), TJ = TJ max.
VTM Maximum on-state or forward 1.50 V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
VFM voltage drop
IH Maximum holding current 500 mA TJ = 25°C, anode supply 12V resistive load
IL Typical latching current 1000
Parameter IRK.500.. Units Conditions
On-state Conduction
di/dt Maximum rate of rise of turned-on 1000 A/µs TJ = TJ max., ITM = 400A, VDRM applied
current
td Typical delay time 2.0 µ s Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
tq Typical turn-off time 200 µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
VR = 50V, dv/dt = 20V/µs, Gate 0 V 100Ω
Parameter IRK.500.. Units Conditions
Switching
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IRK.500.. Series
3
Bulletin I27401 rev. A 09/97
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TJ Max. junction operating temperature range - 40 to 130 °C
Tstg Max. storage temperature range - 40 to 150
RthJC Max. thermal resistance, junction to 0.065 K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to 0.02 K/W
heatsink
T Mounting torque ± 10% SMAP to heatsink 6 - 8 Nm
busbar to SMAP 12 - 15
wt Approximate weight 1500 g
Case style SUPER MAGN-A-pak See outline table
dv/dt Maximum critical rate of rise of off-state 1000 V/µs TJ = 130°C., linear to VD = 80% VDRM
voltage
VINS RMS isolation voltage 3000 V t = 1 s
IRRM Maximum peak reverse and off-state 100 mA TJ = TJ max., rated VDRM/VRRM applied
IDRM leakage current
Parameter IRK.500.. Units Conditions
Blocking
Parameter IRK.500.. Units Conditions
Triggering
PGM Maximum peak gate power 10 W TJ = TJ max., tp < 5ms
PG(AV) Maximum peak average gate power 2.0 W TJ = TJ max., f = 50Hz, d% = 50
+ IGM Maximum peak positive gate current 3.0 A TJ = TJ max., tp < 5ms
+ VGM Maximum peak positive gate voltage 20 V
- VGM Maximum peak negative gate voltage 5.0 V
IGT Max. DC gate current required to trigger 200 mA TJ = 25°C Vak 12V
VGT DC gate voltage required to trigger 3.0 V TJ = 25°C Vak 12V
IGD DC gate current not to trigger 10 mA TJ = TJ max.
VGD DC gate voltage not to trigger 0.25 V
Parameter IRK.500.. Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound
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IRK.500.. Series
4
Bulletin I27401 rev. A 09/97
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IRK T 500 - 16
1 2 3
1 - Module type
2 - Circuit configuration (See Circuit Configurations Table)
3 - Current rating
4 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
4
Device Code
Ordering Information Table
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.009 0.006
120° 0.011 0.011
90° 0.014 0.015 K/W TJ = TJ max.
60° 0.021 0.022
30° 0.037 0.038
IRKT IRKH IRKL
Circuit Configurations Table
+
7(K2)
6(G2)
-
4(K1)
5(G1)
~
1
2
3
+
7(K2)
6(G2)
-
~
1
2
3
+
-
4(K1)
5(G1)
~
1
2
3
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.500.. Series
5
Bulletin I27401 rev. A 09/97
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Outline Table
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
60
70
80
90
100
110
120
130
0 100 200 300 400 500 60
0
30°60° 90° 120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C
)
Conduction Angle
IRK.500.. Series
R (DC) = 0.065 K/W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 90
0
DC
30° 60°90°
120°180°
Average On-state Current (A)
Maxim um A l lowable Case Te mperature (°C
)
Conduction Period
IRK.500.. Series
R (DC) = 0.065 K/W
thJC
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IRK.500.. Series
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Bulletin I27401 rev. A 09/97
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Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
0
100
200
300
400
500
600
700
0 100 200 300 400 5
00
RMS Limit
Conduction Ang le
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W
)
Average On-state Current (A)
IRK.500.. Series
Per Junction
T = 130°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 80
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conducti on Period
Maximum Ave rage On- state Power Loss (W
)
Average On-state Current (A)
IRK.500.. Series
Per Juncti on
T = 130°C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
1 10 10
0
Number Of Equal Amplitu d e Half Cycle Current Pulses (N
)
Peak Half Sine Wave On-state Current (A
)
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V A pplied Fol lowing Surge.
RRM
IRK .500.. Series
Per Junction
6000
8000
10000
12000
14000
16000
18000
0.01 0.1
1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum No n Repetitive S urge Curren
t
Versus Pulse Train Duration. Contro
l
Of Conduction May Not Be Maintained
.
Initial T = 130°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
IRK.500.. Series
Per Junction
0 20 40 60 80 100 120
Maxim um All o wable Ambient Te mpe rature (°C
)
R = 0.07 K/W - Delta R
0.09 K/W
0.12 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.6 K/W
thSA
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
Total RMS Output Curren t (A)
Maximum Total On-state Power Loss (W
)
Co nduction Angle
IRK.500.. Series
Per Module
T = 130 °C
J
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IRK.500.. Series
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Bulletin I27401 rev. A 09/97
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Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 10 - On-state Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
0 20 40 60 80 100 120
Maximum Allowable Ambient Temperature (°C
)
R = 0.01 K/W - Delta R
0.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.12 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Output Current (A)
Maximum To tal Po wer Lo ss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.500.. Series
Single Phas e Bridge
Connected
T = 130°C
J
0 20 40 60 80 100 120
Maximum Allowable Ambient Temperature (°C
)
R = 0.01 K/W - Delta R
0
.02 K/W
0.03 K/W
0.05 K/W
0.08 K/W
0.2 K/W
thSA
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.500.. Series
Three Phase Bridge
Connected
T = 130°C
J
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4
T = 25°C
J
Instanta neous On -state Current (A)
Instantaneous On-state Vol tage (V)
T = 130°C
J
IRK .500.. Series
Per Junction
0.001
0.01
0.1
0.001 0.01 0.1 1 10 10
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
IRK.500.. Series
Per J unc tion
Steady State Valu e:
R = 0.06 5 K/W
(DC Operation)
thJC
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IRK.500.. Series
8
Bulletin I27401 rev. A 09/97
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Fig. 12 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IGD
(b) (a)
Tj=25 °C
Tj=-40 °C
(2) (3)
Instantaneou s Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30 % rated d i/dt : 10V, 10ohms
rated di/dt : 2 0 V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj=130 °C
IRK.500.. Series Frequency Limited by PG(AV)
(4)
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