DTA043E series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
VCC -50V
IC(MAX.) -100mA
R14.7kΩ DTA043EM DTA043EEB
R24.7kΩ (SC-105AA) (SC-89)
UMT3F
llFeatures
1) Built-In Biasing Resistors, R1 = R2 = 4.7kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC043E series
6) Lead Free/RoHS Compliant.
DTA043EUB
(SC-85)
llInner circuit
llApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTA043EM VMT3 1212 T2L 180 8 8000 37
DTA043EEB EMT3F 1616 TL 180 8 3000 37
DTA043EUB UMT3F 2021 TL 180 8 3000 37
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© 2012 ROHM Co., Ltd. All rights reserved. 1/7 20121216 - Rev.002
DTA043E series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Supply voltage VCC -50 V
Input voltage VIN -30 to 10 V
Output current IO-100 mA
Collector current IC(MAX)*1 -100 mA
Power dissipation
DTA043EM
PD*2
150
mW DTA043EEB 150
DTA043EUB 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
VI(off) VCC = -5V, IO = -0.1mA - - -0.5
V
VI(on) VO = -0.3V, IO = -5mA -2.2 - -
Output voltage VO(on) IO / II = -5mA / -0.5mA - -0.07 -0.15 V
Input current II VI = -5V - - -1.8 mA
Output current IO(off) VCC = -50V, VI = 0V - - -0.5 μA
DC current gain GI VO = -10V, IO = -5mA 20 - - -
Input resistance R1- 3.29 4.7 6.11 kΩ
Resistance ratio R2/R1- 0.8 1 1.2 -
Transition frequency fT*1 VCE = -10V, IE = 5mA,
f = 100MHz - 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHM Co., Ltd. All rights reserved. 2/7 20121216 - Rev.002
DTA043E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current
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© 2012 ROHM Co., Ltd. All rights reserved. 3/7 20121216 - Rev.002
DTA043E series Datasheet
llElectrical characteristic curves (Ta =25°C)
Fig.5 Output voltage vs. output current
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© 2012 ROHM Co., Ltd. All rights reserved. 4/7 20121216 - Rev.002
DTA043E series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 5/7 20121216 - Rev.002
DTA043E series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 6/7 20121216 - Rev.002
DTA043E series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 7/7 20121216 - Rev.002
