Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50TX-HB
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
68
8
86
74±
0.25
62.5
–0.2
0
1414
10.5
4–φ5.4±
0.1
(10)18.518.518.518.5(10)
80±
0.25
94
20 20
11–M4
B1 B2 U
B3 B4 V
B5 B6 W
(N)–
(P)+
10
7
4
2
13 13
24.8
26
28.2
B1
B2
B3
B4
U
B5
B6
V
P (+)
W
N (–)
LABEL
• ICCollector current .......................... 50A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Tj
Tstg
Viso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M4
Mounting screw M5
B(E) terminal screw M4
Typical value
Ratings
600
600
600
7
50
50
310
3
500
–40~+150
–40~+125
2500
0.98~1.47
10~15
1.47~1.96
15~20
0.98~1.47
10~15
520
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
750
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V,Emitter open
VEB=7V, Collector open
IC=50A, IB=67mA
IC=–50A (diode forward voltage)
IC=50A, VCE=2.5V
VCC=300V, IC=50A, IB1=100mA, –IB2=1.0A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
80
2.5
3.0
1.8
—
2.0
8.0
3.0
0.4
1.3
0.2
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Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT I B (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE (sat) (V)
SATURATION VOLTAGE V CE (sat), V BE (sat) (V)SWITCHING TIME t on, t s, t f (µs)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
0
10
–1
10
–3
10
–2
10
0
10
–1
10
7
5
4
3
2
–2
10
7
5
4
3
2
2.2 2.6 3.0 3.4 3.8 4.2
V
CE
=2.5V
T
j
=25°C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE(sat)
V
BE(sat)
T
j
=25°C
T
j
=125°C
I
B
=67mA
0
753275327532
5
4
3
2
1
IC=10A
Tj=25°C
Tj=125°C
IC=50A
IC=25A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
t
f
t
on
T
j
=25°C
T
j
=125°C I
B2
=–1.0A
V
CC
=300V
I
B1
=100mA
t
s
100
80
60
40
20
0 0 1 2 3 4 5
T
j
=25°C
I
B
=150mA
I
B
=100mA
I
B
=10mA
I
B
=20mA
I
B
=50mA
4
10
7
5
4
3
2
3
10
7
5
4
3
2
2
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
CE
=2.5V
T
j
=25°C
T
j
=125°C
V
CE
=5.0V
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Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME t s, t f (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
TIME (s)
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
DERATING FACTOR (%) COLLECTOR REVERSE CURRENT –I C (A)
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z th (j–c) (°C/ W)
–3
10 –2
10 –1
10 0
10
0
10 1
10 2
10
2
10
1
10
0
10
0
10 1
10 2
10 3
10
–1
10
100
90
60
40
20
0 0 16020 40 60 80 100 120 140
80
10
70
50
30
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 –1
10 2 3 4 5 7 0
10 2 3 4 5 7 1
10
Tj=25°C
Tj=125°C
VCC=300V
IC=50A
IB1=100mA
tf
ts
160
40
0 0 100 800
120
80
300 400 500
140
100
60
20
Tj=125°C
IB2=–1.5A
IB2=–3.5A
200 600 700
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.2 0.6 1.0 1.4 1.8 2.2
Tj=25°C
Tj=125°C
753275327532
0.5
0.4
0.3
0.1
0
23 57
0.2
32 5 7
753275327532
75
32
75
3
2
7
5
32 TC=25°C
1ms
DC
10ms
100µs
500µs
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
NON-REPETITIVE
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Feb.1999
I rr (A), Q rr (µc)
SURGE COLLECTOR REVERSE CURRENT
–I CSM (A)
t rr (µs)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE PART)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
TIME (s)
Z th (j–c) (°C/ W)
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
–3
10
–2
10
0
10
–1
10
0
10
1
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
–1
10
–1
10
2
10
1
10 75432
0
10 75432
0
100
200
300
400
500
753275327532
75
32
75
3
2
7
5
32
I
rr
t
rr
Q
rr
I
B2
=–1.0A
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=100mA
753275
32
7532
2.0
1.6
1.2
0.8
0.4
0
23 57
32
75
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