IRFR3911PBF - INTERNATIONAL RECTIFIER

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12/06/04

IRFR3911PbF

IRFU3911PbF

SMPS MOSFET

HEXFET® Power MOSFET

VDSS RDS(on) max ID

100V 0.115Ω14A

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.5 A

IDM Pulsed Drain Current 56

PD @TC = 25°C Power Dissipation 56 W

Linear Derating Factor 0.37 W/°C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 7.1 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

Absolute Maximum Ratings

Notes  through  are on page 10

D-Pak

IRFR3911 I-Pak

IRFU3911

lHigh frequency DC-DC converters

lLead-Free

Benefits

Applications

lLow Gate-to-Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 2.7

RθJA Junction-to-Ambient (PCB mount)* –– – 50 °C/W

RθJA Junction-to-Ambient ––– 110

Thermal Resistance

PD - 95373A

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IRFR/U3911PbF

Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 9.6 ––– ––– S VDS = 50V, ID = 8.4A

QgTotal Gate Charge –– – 21 32 ID = 8.4A

Qgs Gate-to-Source Charge ––– 4.3 6.5 nC VDS = 80V

Qgd Gate-to-Drain ("Miller") Charge ––– 6.6 9.9 VGS = 10V 

td(on) Turn-On Delay Time ––– 7.9 ––– VDD = 500V

trRise Time ––– 26 ––– ID = 8.4A

td(off) Turn-Off Delay Time ––– 52 ––– RG = 22Ω

tfFall Time ––– 25 ––– VGS = 10V 

Ciss Input Capacitance ––– 740 ––– VGS = 0V

Coss Output Capacitance ––– 110 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz

Coss Output Capacitance ––– 700 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 61 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 80V 

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Typ. Max. Units

EAS Single Pulse Avalanche Energy––– 68 mJ

IAR Avalanche Current––– 8.4 A

EAR Repetitive Avalanche Energy––– 0.0056 mJ

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V 

trr Reverse Recovery Time ––– 86 ––– n s TJ = 25°C, IF = 8.4A

Qrr Reverse RecoveryCharge ––– 290 ––– nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 100 – –– – –– V V GS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA 

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.115 ΩVGS = 10V, ID = 8.4A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 20 µA VDS = 100V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

IGSS

IDSS Drain-to-Source Leakage Current

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IRFR/U3911PbF

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate-to-Source Voltage (V)

1.00

10.00

100.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 15V

20µs PU LSE WIDT H

0.1 110 100

VDS, Dr ain-to-Source Voltage (V)

0.1

100

ID, Drain-to-Source Current (A)

4.5V

20µs PU LSE WIDT H

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 110 100

VDS, Dr ain-to-Source Vol tage (V)

0.1

100

ID, Drain-to-Source Current (A)

4.5V

20µs PU LSE WIDT H

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

14A

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IRFR/U3911PbF

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Dr ain-to-Source Vol tage (V)

100

1000

10000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + Cgd, C

ds SHORTED

Crss

= C

Coss

= C

ds + Cgd

0 5 10 15 20 25

Q , T o ta l Ga te C h a rge (nC )

V , Gate-to-Source Voltage (V)

I =

D8.4A

V = 20V

V = 50V

V = 80V

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS , Dr ain-toSource Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Singl e Pul se

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

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IRFR/U3911PbF

Fig 10a. Switching Time Test Circuit

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Therm al Res ponse (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SING LE PULSE

(THERMAL RESPO NSE)

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IRFR/U3911PbF

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150 175

120

Sta rting T , Junction Tempe ra ture ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

3.4A

5.9A

8.4A

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IRFR/U3911PbF

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

e-Applied

oltage

Reverse

Recovery

Current Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



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IRFR/U3911PbF

D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

IN THE ASSEMBLY LINE "A"

A SSEM BLED ON W W 16, 1999

EXAMPLE: WIT H A SSEMBLY

THIS IS AN IRFR120

LOT CODE 1234 YEAR 9 = 199

DATE CODE

WEEK 16

PART NUMBER

LOGO

INTERNATIONAL

RECTIFIER

AS S EMBL Y

LOT CODE

916A

IRFU120

YEAR 9 = 1999

DA TE CODE

P = DE SIGNATE S LEAD-F REE

PRODUCT (OPTIONAL)

Note: "P" in assembly line position

indic a tes "Lea d-Free "

12 34

WEEK 16

A = ASSEMBLY SITE CODE

PART NUMBER

IRFU120

LINE A

LOGO

LOT CODE

AS S EMBL Y

INTERNATIONAL

RECTIFIER

www.irf.com 9

IRFR/U3911PbF

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

ASSEMBL Y

EXAMPLE: WIT H AS SEMBLY

THIS IS AN IRFU 120

YEAR 9 = 199

DATE CODE

LINE A

WEEK 19

IN THE ASSEMBLY LINE "A"

ASSEMBLED ON WW 19, 1999

LOT C ODE 5678

PART NUMB ER

IRFU120

INTERNATIONAL

LOGO

RECTIFIER

LOT COD E

919A

Note: "P" in assembly line

position indicates "Lead-Free"

56 78

AS S EMBLY

LOT COD E

RECTIFIER

LOGO

INTERNATIONAL

IRFU120

PART NUM BER

WEEK 19

DATE C ODE

YEA R 9 = 1999

A = ASS EMBLY S IT E CODE

P = DE S I GNAT E S L E AD-F REE

PRO D UC T (OPTIONAL)

10 www.irf.com

IRFR/U3911PbF

 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ 8.4A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Starting TJ = 25°C, L = 1.9mH

RG = 25Ω, IAS = 8.4A.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRE CTION

16.3 ( .641

)

15.7 ( .619

)

TRR TRL

OTES :

. CONTROLLIN G DIMENSION : MILLIMETE R.

. ALL D IMENS IONS ARE SHOWN IN MILL IMET ERS ( IN C H ES ) .

. OUTLINE CONFO RMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/