AON6408
30V N-Channel MOSFET
General Description Product Summary
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
17 21
44 53
RθJC 3.4 4
ID = 25A
RDS(ON) < 6.5mΩ
TC=25°C
2.4
12.5
TC=100°C
32
130Pulsed Drain Current
C
Continuous Drain
Current G
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
t ≤ 10s °C/W
Parameter
RθJA
V
V±20Gate-Source Voltage
Drain-Source Voltage 30
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
The AON6408 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications. RDS(ON) < 9.5mΩ
VDS (V) = 30V
Repetitive avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
11.5
Continuous Drain
Current
51
14.5
A
A
TA=25°C IDSM A
TA=70°C
ID25
20
TC=25°C
TC=100°C
Power Dissipation BPDW
Power Dissipation APDSM W
TA=70°C
31
1.5
TA=25°C
Maximum Junction-to-Case Steady-State °C/W
Steady-State °C/W
Maximum Junction-to-Ambient
A D
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6408
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=125°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.5 2 2.5 V
I
D(ON)
130 A
5.4 6.5
T
J
=125°C 8.4 10.1
7.5 9.5 mΩ
g
FS
70 S
V
SD
0.75 1 V
I
S
31 A
C
iss
1270 1590 1900 pF
C
oss
170 240 310 pF
C
rss
87 145 200 pF
R
g
0.8 1.5 2.3 Ω
Q
g
(10V) 24 30 36 nC
Q
g
(4.5V) 12 15 18 nC
Q
gs
4.2 5.2 6.2 nC
Q
gd
4.7 7.8 11 nC
t
D(on)
6.7 ns
t
r
3.5 ns
t
D(off)
22.5 ns
t
f
4 ns
t
rr
22 28 34 ns
Q
rr
19 24 30 nC
Rev 1 : Nov-10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.83Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
20
40
60
80
100
0123456
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=20A
V
GS
=10V
I
D
=20A
0
5
10
15
20
25
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
125°C
0
20
40
60
80
100
120
140
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=3V
4V
7V
10V
4.5V
5V
3.5V
6V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
R
θJC
=4°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
20.00
30.00
40.00
50.00
60.00
70.00
80.00
90.00
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
AR
(A) Peak Avalanche Current
0
10
20
30
40
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
5
10
15
20
25
30
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
T
A
=25°C
1
10
100
1000
10000
0 0 0 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=53°C/W
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6408
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
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