AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) < 6.5m (VGS = 10V) RDS(ON) < 9.5m (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B C TA=25C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. A 11.5 IAR 32 A EAR 51 mJ 31 2.4 W 1.5 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State W 12.5 PDSM TA=70C A 130 PD TC=100C V 14.5 IDSM TA=70C 20 20 IDM TA=25C Continuous Drain Current Avalanche Current C Units V 25 ID TC=100C Maximum 30 RJA RJC Typ 17 44 3.4 C Max 21 53 4 Units C/W C/W C/W www.aosmd.com AON6408 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage On state drain current VDS=VGS ID=250A 1.5 VGS=10V, VDS=5V 130 TJ=125C 5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ A 100 nA 2 2.5 V 5.4 6.5 8.4 10.1 7.5 9.5 m 1 V 31 A A 70 0.75 m S 1270 1590 1900 pF 170 240 310 pF 87 145 200 pF 0.8 1.5 2.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24 30 36 nC Qg(4.5V) Total Gate Charge 12 15 18 nC 4.2 5.2 6.2 nC 4.7 7.8 11 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=20A, dI/dt=500A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 6.7 ns 3.5 ns 22.5 ns 4 ns 22 28 34 19 24 30 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. Rev 1 : Nov-10 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V 5V 120 6V VDS=5V 4.5V 80 100 60 4V ID(A) ID (A) 7V 80 60 40 3.5V 40 125C 20 20 25C VGS=3V 0 0 0 1 2 3 4 0 5 12 3 4 5 6 Normalized On-Resistance 1.8 10 RDS(ON) (m ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 8 6 VGS=10V 4 1.6 VGS=10V ID=20A 1.4 17 5 VGS=4.5V 2 ID=20A 10 1.2 1 0.8 2 0 5 10 0 15 20 25 30 35 40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 1.0E+00 IS (A) RDS(ON) (m ) 1 15 125C 10 125C 1.0E-01 1.0E-02 25C 1.0E-03 5 1.0E-04 25C 1.0E-05 0.0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AON6408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2200 2000 VDS=15V ID=20A 1800 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1600 1400 1200 1000 800 600 Coss 400 200 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100s 1ms 10ms DC 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 0.1 160 10s Power (W) 10s 100.0 ID (Amps) 5 30 200 1000.0 TJ(Max)=150C TC=25C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=4C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 80.00 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 90.00 70.00 TA=100C 60.00 50.00 TA=150C 40.00 TA=125C 30 20 10 30.00 0 20.00 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 10000 30 TA=25C 25 1000 20 Power (W) Current rating ID(A) 125 TCASE (C) Figure 13: Power De-rating (Note F) 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 0 150 Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=53C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6408 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com