IMAGE SENSOR CCD area image sensor S7361 Front-illuminated FFT-CCDs for X-ray imaging S7361 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS (Fiber Optic plate with Scintillator) that converts X-ray into visible-light is mounted on a CCD chip, which enables S7361 to do the X-ray imaging. High performance (resolution & contrast) X-ray imaging is to be realized by using S7361, which allows remarkable reduction with a conventional X-ray film method. A trigger signal of controller is to be constituted by using signal, which is detected at X-ray exposure to S7361, as a monitor PD is integrated in a CCD chip. S7361 has an effective pixel size of 48 x 48 m and is available in active area of 28.8 (H) x 19.2 (V) mm2. Features Applications l Trigger signal fed into controller to be constituted On-chip photodiode for detecting X-ray irradiation l Compactness 3.1 mm thickness excluding I/O connector part l High S/N 12 bit S/N (60 kVp, 30 mR, 0.1 s X-ray irradiation) l High reliability l General X-ray imaging l Non-destructive inspection Durability for use under 100,000 shots (60 kVp, 30 mR X-ray irradiation) l Resolution: 10 Lp/mm l 600 (H) x 400 (V) pixel format l Pixel size: 48 x 48 m l Coupled with FOS for X-ray imaging l 100 % fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation Selection guide Type No. Cooling S7361 Non-cooled Note) As an input window, FOS is suited to S7361. General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Number of total pixels 608 x 402 Number of active pixels 600 x 400 Active area [mm (H) x mm (V)] 28.8 x 19.2 Specification Full frame transfer 100 % 600 (H) x 400 (V) 48 (H) x 48 (V) m 28.8 (H) x 19.2 (V) mm 2 phase 2 phase One-stage MOSFET source follower without load resistance Ceramic package FOS (Fiber Optic plate with Scintillator) 1 CCD area image sensor Absolute maximum ratings (Ta=25 C) Parameter Storage temperature Operating temperature OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low Electrical characteristics (Ta=25 C) Symbol Tstg Topr VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -10 0 -0.5 -0.5 -10 -10 -10 -10 -10 -10 Typ. - Max. +70 +40 +25 +18 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V Symbol VOD VRD VOG VSS VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 11.5 1 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 15 12 3 0 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 18 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V Typ. 1 1 25000 1200 20 10 400 0.99999 6 1000 60 Max. 2 2 9 - Unit MHz MHz pF pF pF pF pF V W mW Parameter Symbol Remark Signal output frequency fc Reset clock frequency frg Vertical shift register capacitance CP1V, CP2V Horizontal shift register capacitance CP1H, CP2H Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE *1 DC output level Vout *2 Output impedance Zo *2 Power dissipation P *2, *3 *1: Measured at half of the full well capacity. CTE is defined per pixel. *2: VOD=15 V, RL (load resistance of source follower) =1 kW. *3: Power dissipation of the on-chip amplifier. 2 S7361 Min. 0.99995 3 - V V V V V CCD area image sensor Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Remark Min. Typ. Max. Saturation output voltage Vsat Fw x Sv Full well capacity Fw 600 1200 CCD node sensitivity Sv *4 0.25 0.4 Dark signal (MPP mode) DS *5 8 24 Readout noise Nr *6 80 160 Dynamic range DR *7 15,000 X-ray response non-uniformity XRNU *8, *9 20 30 White spots 10 Point defects *10 Black spots 10 Blemish Cluster defects *11 0 Column defects *12 0 X-ray resolution *8 8 10 DR *4: VOD=15 V, RL (load resistance of source follower) = 1 kW. *5: Dark signal doubles for every 5 to 7 C. *6: -40 C, operating frequency is 1 MHz. *7: Dynamic range = Full well capacity / Readout noise *8: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *9: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position. *10: White spots > 20 times of typ. dark signal (8 ke-/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *11: continuous 2 to 9 point defects. *12: continuous >10 point defects. S7361 Unit V keV/eke-/pixel/s e-rms % Lp/mm 3 SS 4 OS OD 5 6 RD 7 RG OG SG P1H P2H 8 9 12 10 11 ...... 596 597 598 599 600 TG ...... S599 S600 S601 S602 S603 S604 D3 D4 1 2 1 2 3 ...... 398 399 400 2 3 P1V P2V D1 D2 S1 S2 S3 S4 S5 S6 Device structure V- 13 MONITORING PHOTODIODE KMPDC0114EA Pixel format Blank 2 Optical black 2 Left Horizontal Direction (R) Right Isolation Effective Isolation 1 600 1 Optical black 0 Blank 2 Top Vertical direction (R) Bottom Isolation Effective Isolation 1 400 1 3 CCD area image sensor S7361 Timing chart INTEGRATION PERIOD READOUT PERIOD X-RAY EXPOSURE Trigger *1 Tpwv Tpwv VD: VERTICAL DUMMY VD1 P1V 1 2, 3, ... , 399, 400, VD2 P2V, TG *2 P1H P2H, SG RG OUT Tovr P2V, TG ENLARGED VIEW Tpwh, Tpws P1H P2H, SG Tpwr RG OUT S2, S3, S4, ... , S602, S603, S604 D1 D2 S1 *1: Low active trigger pulse *2: TG terminal can be short-circuited to P2V terminal. D3 D4 KMPDC0113EA Parameter Symbol Remark Pulse width tpwv 13 P1V,P2V,TG * Rise and fall time tprv, tpfv Pulse width tpwh P1H,P2H Rise and fall time tprh, tpfh *13 Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1H Overlap time tovr *13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. 4 Min. 30 200 250 10 250 10 10 5 18 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s CCD area image sensor Dimensional outline (unit: mm) sional outline ( 7361, unit: mm) S7361 34.0 0.4 28.8 (2.6) FOP 30.2 (1.3) (5.75) ACTIVE AREA 23.5 0.3 FOP 20.85 (5 x) (5.0) 14 molex 52745-1417 1 (4.0) 6.55 0.5 (0.5) Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol P1V P2V TG SS OS OD RD RG OG P1H P2H SG VNC (1.2) FOP 1.5 1.1 0.3 Cu-w (0.5 t) (2.0) 2.0 0.3 3.1 0.3 14.4 0.5 (1.325) 2.15 19.2 2.15 (4.85) (1.2) (1.2) (4 x) R3.5 2.0 (1.325) 3.2 KMPDA0128EA Description CCD vertical register clock-1 CCD vertical register clock-2 Transfer gate Substrate Output transistor source Output transistor drain Reset drain Reset gate Output gate CCD horizontal register clock-1 CCD horizontal register clock-2 Summing gate Monitor PD cathode Remark Same timing as P2V Same timing as P2H Anode is shorted to SS Precautions for use (Electrostatic countermeasures) *Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. *Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1046E02 Feb. 2003 DN 5