IPN95R3K7P7 MOSFET 950VCoolMOSP7SJPowerDevice PG-SOT223 Thelatest950VCoolMOSTMP7seriessetsanewbenchmarkin950V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon'sover18years pioneeringsuperjunctiontechnologyinnovation. Features *Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss *Best-in-classSOT-223RDS(on) *Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof0.5V *IntegratedZenerDiodeESDprotection *Best-in-classCoolMOSTMqualityandreliability *Fullyoptimizedportfolio Drain Pin 2 Benefits *1 Gate Pin 1 *Best-in-classperformance *Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts *Easytodriveandtoparallel *BetterproductionyieldbyreducingESDrelatedfailures *Lessproductionissuesandreducedfieldreturns *Easytoselectrightpartsforfinetuningofdesigns *2 *1: Internal body diode *2: Integrated ESD diode Source Pin 3 Potentialapplications RecommendedforflybacktopologiesforLEDLighting,lowpower ChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower. AlsosuitableforPFCstageinConsumerandSolarapplications. ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25C 950 V RDS(on),max 3.7 Qg,typ 6 nC ID 2 A Eoss @ 500V 0.5 J VGS(th),typ 3 V ESD class (HBM) 1C - Type/OrderingCode Package Marking IPN95R3K7P7 PG-SOT223 95R3K7 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 2 1.4 A TC=25C TC=100C - 5 A TC=25C - - 2 mJ ID=0.2A; VDD=50V; see table 10 EAR - - 0.04 mJ ID=0.2A; VDD=50V; see table 10 Application (Flyback) relevant avalanche current, single pulse3) IAS - 1.8 - A measured with standard leakage inductance of transformer of 10H MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 6 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque - - - - Ncm - IS - - 0.8 A TC=25C Diode pulse current IS,pulse - - 5 A TC=25C Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=0.4A,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 50 A/s VDS=0...400V,ISD<=0.4A,Tj=25C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max. Maximum Duty Cycle D = 0.5; IPAK equivalent. Pulse width tp limited by Tj,max 3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P7 4) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 19.8 C/W - Thermal resistance, junction - ambient RthJA - - 160 C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 75 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thickness) copper area C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow Tsold soldering allowed - - 260 C Final Data Sheet 4 reflow MSL1 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.04mA - 10 1 - A VDS=950V,VGS=0V,Tj=25C VDS=950V,VGS=0V,Tj=150C IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.11 6.86 3.7 - VGS=10V,ID=0.8A,Tj=25C VGS=10V,ID=0.8A,Tj=150C Gate resistance RG - 1.5 - f=250kHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 950 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 196 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 3 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 5 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 47 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=0.8A, RG=50;seetable9 Rise time tr - 23 - ns VDD=400V,VGS=13V,ID=0.8A, RG=50;seetable9 Turn-off delay time td(off) - 46 - ns VDD=400V,VGS=13V,ID=0.8A, RG=50;seetable9 Fall time tf - 40 - ns VDD=400V,VGS=13V,ID=0.8A, RG=50;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1 - nC VDD=760V,ID=0.8A,VGS=0to10V Gate to drain charge Qgd - 2 - nC VDD=760V,ID=0.8A,VGS=0to10V Gate charge total Qg - 6 - nC VDD=760V,ID=0.8A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=760V,ID=0.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.8A,Tj=25C 320 - ns VR=400V,IF=0.4A,diF/dt=50A/s; see table 8 - 1 - C VR=400V,IF=0.4A,diF/dt=50A/s; see table 8 - 5 - A VR=400V,IF=0.4A,diF/dt=50A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 101 8 1 s 100 10 s 6 ID[A] Ptot[W] 10-1 4 100 s 10-2 1 ms 10 ms 10-3 2 DC 10-4 0 0 25 50 75 100 125 10-5 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 102 10 1 s 0 10 s 10-1 100 s 10-2 1 ms 101 ZthJC[K/W] ID[A] 10 10 ms 0.5 0.2 0.1 0.05 10-3 100 0.02 0.01 DC single pulse 10-4 10-5 100 101 102 103 10-1 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 4 2 20 V 10 V 8V 7V 20 V 3 10 V 6V 8V 5.5 V 7V 5V ID[A] ID[A] 6V 5.5 V 2 1 4.5 V 5V 4.5 V 1 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 12.000 2.5 20 V 10 V 10.000 2.0 RDS(on)[normalized] 6V RDS(on)[] 5.5 V 4V 8.000 4.5 V 6.000 4.000 1.5 1.0 0 1 2 0.5 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=0.8A;VGS=10V 8 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 4 12 10 3 25 C VGS[V] ID[A] 8 2 760 V 120 V 6 150 C 4 1 2 0 0 2 4 6 8 10 0 12 0 2 VGS[V] 4 6 ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 1 2 EAS[mJ] IF[A] 10 100 125 C 10-1 8 Qgate[nC] 0.0 0.2 0.4 0.6 1 25 C 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.2A;VDD=50V 9 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 1100 104 1050 103 1000 2 10 C[pF] VBR(DSS)[V] Ciss 101 950 Coss 100 900 Crss 850 -50 -25 0 25 50 75 100 125 150 10-1 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy Eoss[J] 2 1 0 0 100 200 300 400 500 600 700 800 900 1000 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 6PackageOutlines DOCUMENT NO. Z8B00180553 SCALE DIM A A1 A2 b b2 c D E E1 e e1 L N O MILLIMETERS MIN MAX 1.52 1.80 0.10 1,50 1.70 0.60 0.80 2.95 3.10 0.24 0.32 6.30 6.70 6.70 7.30 3.30 3.70 2.3 BASIC 4.6 BASIC 0.75 1.10 3 0 INCHES MIN 0.060 0.059 0.024 0.116 0.009 0.248 0.264 0.130 MAX 0.071 0.004 0.067 0.031 0.122 0.013 0.264 0.287 0.146 0.091 BASIC 0.181 BASIC 0.030 0.043 3 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 24-02-2016 REVISION 01 Figure1OutlinePG-SOT223,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 7AppendixA Table11RelatedLinks * IFXCoolMOSP7Webpage:www.infineon.com * IFXCoolMOSP7applicationnote:www.infineon.com * IFXCoolMOSP7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2018-06-01 950VCoolMOSP7SJPowerDevice IPN95R3K7P7 RevisionHistory IPN95R3K7P7 Revision:2018-06-01,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-06-01 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2018-06-01