SFH618A/628A Phototransistor, 5.3 kV TRIOS Low Current Input Optocoupler FEATURES * Very High CTR at IF=1.0 mA, VCE=0.5 V - SFH618A-2, 63-125% - SFH618A-3, 100-200% - SFH618A-4, 160-320% - SFH618A-5, 250-500% - SFH628A-2, 63-200% - SFH628A-3, 100-320% - SFH628A-4, 160-500% * Specified Minimum CTR at IF=0.5 mA - SFH618A, VCE=1.5 V: 32% (typical 120%) - SFH628A, VCE=1.5 V: 50% (typical 160%) * Good CTR Linearity Depending on Forward Current * Low CTR Degradation * High Collector-emitter Voltage, VCEO=55 V * Isolation Test Voltage, 5300 VRMS * Low Coupling Capacitance * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * End-Stackable, 0.100" (2.54 mm) Spacing * High Common-mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 * SMD Option -- See SFH6186/6286 Data Sheet D E APPLICATIONS * Telecom * Industrial Controls * Battery Powered Equipment * Office Machines DESCRIPTION The SFH618A/628A feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8.0 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Dimensions in Inches (mm) 2 1 SFH618A pin one ID .255 (6.48) .268 (6.81) Anode 1 4 Collector 3 Emitter Cathode 2 SFH628A 3 4 Collector Cathode/ Anode 2 3 Emitter 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) Anode/ Cathode 1 .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage (SFH618A)............................................................. 6.0 V DC Forward Current (SFH628A) .................................................. 50 mA Surge Forward Current (tp10 s) (SFH628A) ............................... 2.5 A Total Power Dissipation ................................................................. 70 mW Detector Collector-emitter Voltage ................................................................... 55 V Emitter-collector Voltage................................................................... 7.0 V Collector Current ............................................................................ 50 mA Collector Current (tp1.0 ms) ....................................................... 100 mA Total Power Dissipation ............................................................... 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ..................................................................... 5300 VRMS Creepage Distance .................................................................... 7.0 mm Clearance ................................................................................... 7.0 mm Insulation Thickness between Emitter and Detector .................. 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 ..................................................175 Isolation Resistance VIO=500 V, TA=25C................................................................. 1012 VIO=500 V, TA=100C............................................................... 1011 Storage Temperature Range ............................................. -55 to +150C Ambient Temperature Range............................................. -55 to +100C Junction Temperature ......................................................................100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) ..........................................260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-242 March 12, 2000-00 Characteristics (TA=25C) Description Symbol Min. Typ. Max. Unit Condition VF -- 1.1 1.5 V IF=5.0 mA Emitter Forward Voltage Reverse Current SFH618A IR -- .01 10 A VR=6.0 V Capacitance SFH618A SFH628A C0 -- 25 45 -- pF VR=0 V, f=1.0 MHz RthJA -- 1070 -- K/W -- Collector-emitter Leakage Current ICEO -- 10 200 nA VCE=10 V Capacitance CCE -- 7 -- pF VCE=5.0 V, f=1.0 MHz Thermal Resistance RthJA -- 500 -- K/W -- VCEsat -- 0.25 0.4 V IC=0.32 mA, IF=1.0 mA SFH618A-3 -- 0.25 0.4 IC=0.5 mA, IF=1.0 mA SFH618A-4 -- 0.25 0.4 IC=0.8 mA, IF=1.0 mA SFH618A-5 -- 0.25 0.4 IC=1.25 mA, IF=1.0 mA -- 0.25 0.4 SFH628A-3 -- 0.25 0.4 IC=0.8 mA, IF=1.0 mA SFH628A-4 -- 0.25 0.4 IC=1.25 mA, IF=1.0 mA Thermal Resistance Detector Package Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage SFH618A-2 SFH628A-2 VCEsat V IC=0.5 mA, IF=1.0 mA Coupling Capacitance -- CC -- 0.25 -- pF -- Coupling Transfer Ratio SFH618A-2 I C / IF 63 -- 125 % IF=1.0 mA, VCE=0.5 V 32 75 -- 100 -- 200 50 120 -- 160 -- 320 80 200 -- IC/IF 250 -- 500 125 300 -- IC/IF 63 -- 200 32 100 -- 100 -- 320 50 160 -- 160 -- 500 80 250 -- SFH618A-2 SFH618A-3 I C / IF SFH618A-3 SFH618A-4 I C / IF SFH618A-4 SFH618A-5 SFH618A-5 Coupling Transfer Ratio SFH628A-2 SFH628A-2 SFH628A-3 IC/IF SFH628A-3 SFH628A-4 IC/IF SFH628A-4 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) IF=0.5 mA, VCE=1.5 V % IF=1.0 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V % IF=1.0 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V % IF=1.0 mA, VCE=0.5 V % IF=1.0 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=0.5 mA, VCE=1.5 V % IF=1.0 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V % IF=1.0 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V SFH618A/628A 2-243 March 12, 2000-00 Figure 1. Current Transfer Ratio (typ.) VCE=0.5 V, CTR=f(TA) Figure 4. Diode Forward Voltage IF=1.0 mA, VF=f(TA) Figure 7. Permissible Forward Current Diode IF=f(TA) Figure 2. Current Transfer Ratio (typ.) VCE=1.5 V, CTR=f(TA) Figure 5. Transistor Capacitance TA=25C, f=1.0 MHz, CCE=f(VCE) Figure 8. Permissible Power Dissipation Ptot=f(TA) Figure 3. Diode Forward Voltage TA=25C, VF=f(IF) Figure 6. Output Characteristics TA=25C, CE=f(VCE, IF) Figure 9. Switching Times (typ.) TA=25C, IF=1.0 mA, VCC=5.0 V ton, tr, toff, tf=f(RL) 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH618A/628A 2-244 March 12, 2000-00 Switching Times, typical VCC=5.0 V, IC=2.0 mA, RL=100 , TA=25C Turn-on Time ton 6.0 Rise Time tr 3.5 Turn-off Time toff 5.5 Fall Time tf 5.0 Figure 11. Test Circuit--SFH628A IF RL s VCC IC 47 Figure 10. Test Circuit--SFH618A Figure 12. Test Circuit and Waveforms VCC = 5 V Input RL Input Pulse VOUT 10% Output Pulse 90% tr ton 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) tf toff SFH618A/628A 2-245 March 12, 2000-00