2010-08-16
BFP520
12
3
4
NPN Silicon RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports 2.9 V Vcc with enough external
collector resistance.
• High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
• Finds usage e.g. in cordless phones and
satellite receivers
• Pb-free (RoHS compliant) standard package
with visible leads
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collecto r-emitter voltage
T
A
= -55 °C
VCEO
2.5
2.4
V
Collecto r-emitter voltage V
CES
10
Collector-base voltage V
CBO
10
Emitter-base voltage V
EBO
1
Collector current I
C
40 mA
Base current I
B
4
Total power dissipation1)
T
S
≤ 105 °C Ptot 100 mW
Junction temperature T
J
150 °C
Storage temperature T
Stg
-55 ... 150
1TS is measured on the emitter lead at the soldering point to pcb
2010-08-16
BFP520
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) R
≤ 450 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 2.5 33.5 V
Collector-emitter cutoff cu rrent
VCE = 2 V, VBE = 0
VCE = 10 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 2 V, IE = 0 ICBO - - 30
Emitter-base cutoff current
VEB = 0.5 V, IC = 0 IEBO -100 3000
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured hFE 70 110 170 -
1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
2010-08-16
BFP520
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz fT32 45 -GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb -0.07 0.13 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce -0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb -0.33 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin -0.95 -dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gms -24 -dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|2-21.5 -
Third order intercept point at output
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 7 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
IP3
-
-
25
17
-
-
dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 7 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
P-1dB
-
-
12
5
-
-
1Gms = |S21 / S12|
2010-08-16
BFP520
Total power dissipation Ptot = ƒ(TS)
020 40 60 80 100 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mW
120
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
00.5 11.5 2V3
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
Transition freque ncy fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
28
32
36
40
44
GHz
52
fT
2
1
0.75
0.5
2010-08-16
BFP520
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 20 mA
01234GHz 6
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 5 10 15 20 25 30 35 mA 45
IC
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
00.5 11.5 2V3
VCE
0
4
8
12
16
20
24
dB
32
G
0.9
1.8
2.4
3
4
5
6
Minimum noise figure NFmin = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
2010-08-16
BFP520
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 5 10 15 20 25 30 mA 40
IC
0
0.5
1
1.5
2
dB
3
F
Zs = 50Ohm
Zs = Zsopt
Minimum noise figure NFmin= ƒ(f)
VCE = 2 V, ZS = ZSopt
012345GHz 6.5
f
0
0.5
1
1.5
2
dB
3
F
IC = 5 mA
IC = 2 mA
Source impedanc e for min.
noise figure vs. frequency
VCE = 2 V, IC = 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
6GHz
0.45GHz
0.9GHz
1.8GHz
2mA
5mA
2010-08-16
BFP520
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP520 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFP520 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
2010-08-16
BFP520
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25±0.1
0.1 MAX.
2.1±0.1
0.15 +0.1
-0.05
0.3+0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2010-08-16
BFP520
Datasheet Revision History:
16
August
2010
This datasheet replaces the revision from 30 March 2007 and 28 June 2010.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information availab le in the datasheet has been expanded
and updated.
Previous Revisions: 30 March 2007 and 28 June 2010
Page Subject (chan g es since last revision)
1 Feature list updated
2 Typical values for leakage currents included, values for maximum leakage
currents reduced
4 OIP3 characteristic added
7 SPICE model para met ers removed f rom the datasheet, link to the respective
internet site added
2010-08-16
BFP520
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Off ice (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
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Life support devices or systems are intended to be implanted in the human body or
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