Maximum Ratings
x Operating temperature : -55к to +150к
x Storage temperature : -55к to +150к
BC327-16/25/40
BC328
PNP
Plastic-Encapsulate
Transistors
Features
x Capable of 0.625Watts of Power Dissipation.
x Collector-current : -0.8A
x Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328)
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0) BC327
BC328
-45
-25
--- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0) BC327
BC328
-50
-30
--- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(IE=-10µAdc, IC=0)
-5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=-45Vdc,IE=0) BC327
(VCB=-25Vdc,IE=0) BC328
---
---
-0.1
-0.1
µAdc
ICEO Collector Cutoff Current
(VCE=-40Vdc,IB=0) BC327
(VCE=-20Vdc,IB=0) BC328
---
---
-0.2
-0.2
µAdc
IEBO Emitter Cutoff Current
(VEB=-4.0Vdc, IC=0)
--- -0.1 µAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=-100mAdc, VCE=-1.0Vdc) 100 630 ---
hFE(2) DC Current Gain
(IC=-300mAdc, VCE=-1.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
--- -0.7 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=-500mAdc,IB=-50mAdc)
--- -1.2 Vdc
SMALL SIGNAL CHARACTERISTICS
fT Current-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, IC=10mA)
260 --- MHz
TO-92
AE
B
C
D
G
omponents
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Revision: 4 2007/03/01
hFE CLASSIFICATION
Classification 16 25 40
hFE(1) 100~250 160~400 250~630
Marking Code A 011 B 001 C 001
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .010 .104 2.44 2.64
123
1.COLLECTOR
3.EMITTER
2.BASE
TM
Micro Commercial Components
xCase Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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BC327
BC328-16/25/40
MCC
Revision: 4 2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
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MCC
Revision: 4 2007/03/01
TM
Micro Commercial Components
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