3.4 +0.3
-0.1 0.4±0.1
φ1.5±0.1
Cathode indif i ca tion
FEATURES
◇ Silicon epitaxial planar diode
◇ High speed switching diode
◇ 500 mW power dissipation
MECHANICAL DATA
◇ Case: MINI-MELF,glass case
◇ Polarity: Color band denotes cathode
◇ Weight: Approx 0.031 grams
Ratings at 25℃,ambient temperature unless otherwise specified.
Reverse voltage VRV
Repetitive peak reverse voltage VRRM V
Forward current I(AV) A
Forward surge current tp=1s IFSM A
Power dissipation PVmW
Thermal resistance junction to ambient RθJA K/W
Thermal resistance junction to lead RθJL K/W
Junction temperature Tj℃
Storage temperature range TSTG ℃
Document Number 0268017 1.
250
BLGALAXY ELECTRICAL
www.galaxycn.com
BL GALAXY ELECTRICAL BAV100---BAV103
VOLTAGE RANGE: 50-200 V
CURRENT: 250 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.25
350
5001)
- 65 --- + 175
BAV102
ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE
Unit
20060
50 150
BAV101
100
120
SMALL SIGNAL SWITCHING DIODE
BAV100
1.0
175
500
BAV103
200
MINI-MELF
1) Device mounted on PC board 50mm×50mm×1.6mm .