2N3906TAR - ON SEMICONDUCTOR

2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Publication Order Number:

PZT3906/D

October-2017, Rev. 2

2N3906 / MMBT3906 / PZT3906

PNP General-Purpose Amplifier

Ordering Information

Part Number Marking Package Packing Method Pack Quantity

2N3906BU 2N3906 TO-92 3L Bulk 10000

2N3906TA 2N3906 TO-92 3L Ammo 2000

2N3906TAR 2N3906 TO-92 3L Ammo 2000

2N3906TF 2N3906 TO-92 3L Tape and Reel 2000

2N3906TFR 2N3906 TO-92 3L Tape and Reel 2000

MMBT3906 2A SOT-23 3L Tape and Reel 3000

PZT3906 3906 SOT-223 4L Tape and Reel 2500

2N3906 MMBT3906 PZT3906

EBC TO-92 SOT-23 SOT-223

Mark:2A

Description

This device is designed for general-purpose amplifier

and switching applications at collector currents of 10 mA

to 100 mA.

2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Absolute Maximum Ratings(1)

Stresses exceeding the absolute ma ximum ratings may damage the de vice. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. These ratings are based on a maxi mum junction temperature of 150°C.

These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or

low-duty cycle operations.

Thermal Characteristics

Valu es are at TA = 25°C unle s s otherwise noted.

Notes:

2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage -40 V

VCBO Collector-Base Voltage -40 V

VEBO Emitter-Base Voltage -5.0 V

ICCollector Current - Continuous -200 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Symbol Parameter Maximum Unit

2N3906(3) MMBT3906(2) PZT3906(3)

PDTotal Device Dissipation 625 350 1,000 mW

Derate Above 25°C5.02.88.0mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Electrical Characteristics

Valu es are at TA = 25°C unle s s otherwise noted.

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

OFF CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown

Voltage(4) IC = -1.0 mA, IB = 0 -40 V

V(BR)CBO Collector-Base Breakdown V oltage IC = -10 μA, IE = 0 -40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V

IBL Base Cut-Off Current VCE = -30 V, VBE = 3.0 V -50 nA

ICEX Collector Cut-Off Current VCE = -30 V, VBE = 3.0 V - 50 nA

ON CHARACTERISTICS

hFE DC Current Gain(4)

IC = -0.1 mA, VCE = -1.0 V 60

IC = -1.0 mA, VCE = -1.0 V 80

IC = -10 mA, VCE = -1.0 V 100 300

IC = -50 mA, VCE = -1.0 V 60

IC = -100 mA, VCE = -1.0V 30

VCE(sat) Collector-Emitter Saturation

Voltage IC = -10 mA, IB = -1.0 mA -0.25 V

IC = -50 mA, IB = -5.0 mA -0.40

VBE(sat) Base-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA -0.65 -0.85 V

IC = -50 mA, IB = -5.0 mA -0.95

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain - Bandwidth Product IC = -10 mA, VCE = -20 V,

f = 100 MHz 250 MHz

Cobo Output Capacitance VCB = -5.0 V, IE = 0,

f = 100 kHz 4.5 pF

Cibo Input Capacitance VEB = -0.5 V, IC = 0,

f = 100 kHz 10.0 pF

NF Noise Figure IC = -100 μA, VCE = -5.0 V,

RS = 1.0 kΩ,

f = 10 Hz to 15.7 kHz 4.0 dB

SWITCHING CHARACTERISTICS

tdDelay Time VCC = -3.0 V, VBE = -0.5 V

IC = -10 mA, IB1 = -1.0 mA 35 ns

trRise Time 35 ns

tsStorage Time VCC = -3.0 V, IC = -10 mA,

IB1 = IB2 = -1.0 mA 225 ns

tfFall Time 75 ns

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs. Collector

Current Figure 2. Colle ctor-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Em itter Saturation Volta ge

vs. Collector Current Figure 4. Base-Emitter On Voltage vs.

Collector Current

Figure 5. Collect or Cut-Off Current vs.

Ambient Temperature Figure 6. Common-Ba s e O pen Circu it In put and Out-

put Capacitance vs. Reverse Bias Voltage

0. 1 0. 2 0. 5 1 2 5 10 20 50 1 00

100

150

200

250

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CU RRENT GAIN

125 °C

25 °C

- 40 °C

V = 1 .0 V

110100200

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)

V - COLLECTOR EMITTER VOLTAGE (V)

CESAT

25 °C

- 40 °C

125°C

β= 10

110100200

0. 2

0. 4

0. 6

0. 8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER VOLTAGE (V)

BESAT

β= 10

25 °C

- 40 °C

125 °C

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER ON VOLTAGE (V)

BE( ON)

V = 1V

25 °C

- 40 °C

125 °C

25 50 75 100 125

0.01

0.1

10 0

T - A MBI E NT T EMP ER ATUR E ( C)

I - C OL LE CT O R CU RR EN T (nA)

CBO

V = 25V

0.1 1 10

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

Cobo

ibo

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Typical Performance Characteristics (Continued)

Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance

Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On and Turn-Off Times vs.

Collector Current

Figure 11. Power Dissipation vs.

Ambient Temperature

0.1 1 10 100

f - FREQUENCY (kHz)

NF - NOISE FIGURE (dB)

I = 100 μA, R = 2 00Ω

V = 5.0V

I = 100 μA, R = 2.0 kΩ

I = 1.0 mA, R = 200Ω

0.1 1 10 100

R - SOURCE RESISTANCE ( )

NF - NOISE FIGURE (dB)

kΩ

I = 100 μA

V = 5.0V

f = 1.0 kHz

I = 1.0 mA

1 10 100

100

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

1 10 100

100

500

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

off

B1 B2

V = 0.5V

BE(OFF)

t I =

off

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

SOT-23

TO-92

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Typical Performance Characteristics (Continued)

Figure 12. Voltage Feedback Ratio Figure 13. Inp ut Impedance

Figure 14. Output Admittance Figure 15. Current Gain

0.1 1 10

100

I - COLLECTOR CURRENT (mA)

h - VOLTAGE FEEDBACK RATIO (x10 )

0.1 1 10

0.1

I - COLLECTOR CURRENT (mA)

h - INPUT IMPEDANCE (k )

V = 10 V

f = 1.0 kHz

0.1 1 10

100

1000

I - COLLECTOR CURRENT (mA)

h - OUTPUT ADMITTANCE ( mhos)

V = 10 V

f = 1.0 kHz

0.1 1 10

100

200

500

1000

I - COLLECTOR CURRENT (mA)

h - CURRENT GAIN

V = 10 V

f = 1.0 kHz

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Physical Dimensions

Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

TO-92 (Bulk)

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Physical Dimensions (Continued)

Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

TO-92 (Ammo, Tape and Reel)

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Physical Dimensions (Continued)

Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier

Physical Dimensions (Continued)

Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD

Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in

any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to

verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and

conditions, specifically the warranty therein, which covers ON Semiconductor products.

SOT-223 4L

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