PHOTODIODE InGaAs PIN photodiode with preamp G9813-14 ROSA type, 1.31 m, 622 Mbps Features Applications l 1.25 mm sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed response: 622 Mbps l High gain with AGC (Auto Gain Control): 6 V/mW (at -30 dBm) l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output l Sensitivity: +2 to -32 dBm l SDH/SONET (STM-4/OC-12) l Optical fiber communication Absolute maximum ratings (Ta=25 C) Parameter Supply voltage Reverse voltage (photodiode) Operating temperature Storage temperature *1: No condensation Symbol Vcc VR Topr Tstg Value -0.5, +5.0 7 -40 to +85 * 1 -40 to +85 * 1 Unit V V C C Electrical and optical characteristics (Ta=25 C, Vcc=3.0 to 3.6 V, Vpd=3.0 to 5.0 V, Vee=0 V, R L=50 *2, =1.3 1 m, unless otherwise noted) Parameter Responsivity Photo sensitivity Supply current Cut-off frequency Low cut-off frequency Noise equivalent power Trans-impedance Symbol R S Icc fc fc-L NEP Tz Minimum receivable sensitivity Pmin Maximum receivable sensitivity Pmax Output amplitude Vomax Output resistance Rout Dark current ID Optical return loss ORL *2: Output: Capacitive coupling *3: Single-ended (Vout+) measurement Condition Pin= -30 dBm *3 Dark state, R L = Pin= -30 dBm, -3 dB Pin= -30 dBm, -3 dB Dark state, to 467 MHz * 3 f=20 MHz * 3 622 Mbps, NRZ, PN=23, BER=10 -10 , Extinction ratio 10 dB Differential Dark state, R L = Min. 0.7 4.0 435 4.5 Typ. 0.8 6.0 37 550 4 70 7.5 Max. 50 8 100 - - -32 -30 +1 +2 - 40 12 50 0.05 13.5 300 60 1 - Unit A/W V/mW mA MHz kHz nW rms k dBm mV p-p nA dB 1 InGaAs PIN photodiode with preamp Photo sensitivity vs. average input optical power 10-3 (Typ. Ta=25 C, Bit rate 622 Mbps, PN=23, =1.31 m) 10-4 BIT ERROR RATE PHOTO SENSITIVITY (V/mW) Bit error rate (Typ. Ta=25 C, Duty ratio 50 %, Pulse width 10 ns, =1.31 m) 100 G9813-14 10 10 -5 10-6 10 -7 10 -8 10-9 10-10 -11 1 -40 -35 -30 -25 -20 -15 -10 -5 10 10-12 -38 -37 -36 -35 -34 -33 -32 -31 -30 -29 -28 0 AVERAGE OPTICAL INPUT POWER (dBm) AVERAGE OPTICAL INPUT POWER (dBm) KIRDB0290EB KIRDB0347EA Dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1) Eye diagram 4.88 2.92 2.72 ( 1.25) 3.38 0.03 4.04 0.03 5.08 Vout+ Vout- (OPTICAL REFERENCE PLANE) (13) 1.27 0.03 Bit rate 622 Mbps, PN=23, =1.31 m Pin= -25 dBm 4.17 0.02 4.64 6.86 0.5 3.97 (5 x) 0.35 0.05 (60) 2.54 0.15 6.6 5.94 0.05 Operating circuit example Vcc=3.3 V 0.1 F Vpd=3.3 V 0.1 F +0.07 LIGHT INPUT 2.95-0.03 TESTER AGC 5.92 0.2 0.3 R Vout+ 0.1 F 50 Vout50 Vee=GND 50 Pin No. COAXIAL CABLE 0.1 F 50 Vpd (CATHODE) VoutVout+ Vcc Vee (GND) KGPDC0003EA KIRDA0188EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1093E01 2 Apr. 2005 DN