BE MNS CANIS TORS ne J105 JFTJ105 J106 J107 G* Ss SOT-223 s N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Abso I ute Maxi mum Rati n gs* TA = 25C unless otherwise noted Discrete POWER & Signal Technologies Symbol Parameter Value Units Voe Drain-Gate Voltage 25 Vv Ves Gate-Source Voltage - 25 Vv ler Forward Gate Current 10 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J105 / J106 / J107 Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mw/C Rec Thermal Resistance, Junction to Case 125 CAW Resa Thermal Resistance, Junction to Ambient 357 CAW 1997 Fairchild Semiconductor Corporation SOLrPLsf / ZOLP / 90Lf / SOL Electrical Characteristics TA = 25C unless otherwise noted N-Channel Switch (continued) Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Vsryess Gate-Source Breakdown Voltage le=-10 pA, Vos= 0 - 25 Vv less Gate Reverse Current Vas=-15V, Vos =0 -3.0 nA Vas = - 15 V, Vos = 0, Ta= 100C - 200 nA Vasi(of) Gate-Source Cutoff Voltage Vos = 15 V, Ipb=10nA J105 -45 - 10 Vv J106 -2.0 -6.0 Vv J107 -0.5 -4.5 Vv ON CHARACTERISTICS loss Zero-Gate Voltage Drain Current* Vos = 15 V, Ieg= 0 J105 500 mA J106 200 mA J107 100 mA rpsion) Drain-Source On Resistance Vos < 0.1 V, Veg = 0 J105 3.0 Q J106 6.0 Q J107 8.0 Q SMALL SIGNAL CHARACTERISTICS Cuagion) Drain Gate & Source Gate On Vos = 0, Veg = 10 V, f= 1.0 MHz 160 pF Cegion) Capacitance Cagioff) Drain-Gate Off Capacitance Vos = 0, Veg = 10 V, f= 1.0 MHz 35 pF Crgioth) Source-Gate Off Capacitance Vos = 0, Ves = 10 V, f= 1.0 MHz 35 pF *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Typical Characteristics - DRAIN CURRENT (mA) I Common Drain-Source Characteristics T =425 A v, =-5 GS(OFF) 0.5 1 1.5 Vps - DRAIN-SOURCE VOLTAGE(V) Common Drain-Source Characteristics - DRAIN CURRENT (mA) nN @ aN a 3S 6 3 So Qo Ib 2 0 1 2 3 V.. > DRAIN-SOURCE VOLTAGE(V) 4 SOUMSMN (ZOO // SOP / SOL N-Channel Switch (continued) Typical Characteristics (continuea) Parameter Interactions _. 200 2,000 a ~ 100 1,000 g t 2 50 500 ~ Ee b Z 1 20 200 : 3 3 10 100 3 z 5 5 < a * 7 2 20 8 1 10 O1 0203 05 1 23 5 10 Vos GATE CUT OFF VOLTAGE (V) Normalized Drain Resistance vs Bias Voltage lu o a o H 20 GS(OFF) @5V, 10uA o pv 10 ec = 10 Ww N a5 = = ec o = boy Bos 0 0.2 0.4 0.6 0.8 1 V <5! Vasjorss7 NORMALIZED GATE TO SOURCE VOLTAGE (V) Output Conductance vs Drain Current VDG= GS(OFF) -4.0 nN o Qo a Y og7 OUTPUT CONDUCTANCE (u mhos) 02 03 O58 1 2 3 5 10 Ip- DRAIN CURRENT (mA) Capacitance vs Voltage 0.1 -1.0MHz nN o S (Vps =0V) Qo Cis (Crs) - CAPACITANCE (pf) a 0 5 -10 -15 -20 Vos - GATE-SOURCE VOLTAGE (V) On Resistance vs Drain Current ) c GS(OFF) 2 3 5 10 20 30 50 100 |, - DRAIN CURRENT (mA) I pg - DRAIN "ON" RESISTANCE ( Transconductance vs Drain Current VDG=10.0V Tat 55 Zt A t25 s =F =1.0k He fa = 4128 C g ,, > TRANSCONDUCTANCE (u mhos) 20 10 5 =-3.0V GS(OFF) tt Les.0v GS(OFF) 1 0.1 0.2 03 O05 1 2 3 5 10 | ,- DRAIN CURRENT (mA) SOLrPLsf / ZOLP / 90Lf / SOL N-Channel Switch (continued) Typical Characteristics (continued) Noise Voltage vs Frequency nN oO tz ) a - NOISE VOLTAGE (nv/ a 3S en QO 0.01 0.038 O1 O38 1 3 10 30 100 f - FREQUENCY (k Hz) w wo Q on oO oO ny on oO on oO Pp - POWER DISSIPATION (mW) a 8 8 o 6 6 6 Power Dissipation vs Ambient Temperature 26 50 76 100 125 150 TEMPERATURE (C) SOLrPLsf / ZOLP / 90Lf / SOL