APTGS25X120RTP2
APTG
S
25
X
120
B
TP
APTGS25X120BTP2 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
1
-
4
All ratings @ T
j
= 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
RRM
Repetitive Peak Reverse Voltage 1600 V
I
D
DC Forward Current T
C
= 80°C 25
T
j
= 25°C 300
I
FSM
Surge Forward Current t
p
= 10ms T
j
= 150°C 230
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGS25X120RTP2: Without Brake (Pin 7 & 14 not connected)
101118 16 14 1315171920
21
12
1 2 3 4 5 6
22
23
24
7
8
9
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) Low Loss IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Input rectifier bridge +
Brake + 3 Phase Bridge
N
PT IGBT Power Mod
ule
APTGS25X120RTP2
APTG
S
25
X
120
B
TP
APTGS25X120BTP2 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
2
-
4
IGBT & Diode Brake
(only for APTGS25X120BTP2)
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 20
I
C
Continuous Collector Current T
C
= 80°C 12.5
I
CM
Pulsed Collector Current T
C
= 25°C 25
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 100 W
I
F
DC Forward Current T
C
= 80°C 25 A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 45
I
C
Continuous Collector Current T
C
= 80°C 25
I
CM
Pulsed Collector Current T
C
= 25°C 50
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 230 W
SCSOA Short circuit Safe Operating Area T
j
= 125°C 160A @ 720V
I
F
DC Forward Current T
C
= 80°C 25
I
FSM
Surge Forward Current t
p
= 1ms T
C
= 80°C 50 A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
I
R
Reverse Current V
R
= 1600V T
j
= 150°C
2 mA
I
F
= 30A T
j
= 25°C 1.3 1.5
V
F
Forward Voltage I
F
= 25A T
j
= 150°C 1.05 1.1 V
R
thJC
Junction to Case 1 °C/W
IGBT Brake & Diode
(only for APTGS25X120BTP2)
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 0.5 500 µA
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 1200V T
j
= 125°C 0.8 mA
T
j
= 25°C 2.7 3.15
V
CE(on)
Collector Emitter on Voltage V
GE
=15V
I
C
= 12.5A T
j
= 125°C 3.1 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 0.35 mA 4.5 5.5 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 300 nA
C
ies
Input Capacitance V
GE
= 0V, V
CE
= 25V
f = 1MHz 600 pF
T
j
= 25°C 2.05 2.4
V
F
Forward Voltage V
GE
= 0V
I
F
= 25A T
j
= 125°C 1.9 V
IGBT 1.2
R
thJC
Junction to Case Diode 1.2 °C/W
APTGS25X120RTP2
APTG
S
25
X
120
B
TP
APTGS25X120BTP2 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
3
-
4
IGBT & Diode Inverter
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 500µA
1200
V
T
j
= 25°C 1.5 500 µA
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V
V
CE
= 1200V T
j
= 125°C 2 mA
T
j
= 25°C 2.1 2.55
V
CE(on)
Collector Emitter on Voltage V
GE
=15V
I
C
= 25A T
j
= 125°C 2.45 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 1mA 4.5 5.5 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 300 nA
C
ies
Input Capacitance V
GE
= 0V, V
CE
= 25V
f = 1MHz 1500 pF
T
d(on)
Turn-on Delay Time 45
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 290
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 25A
R
G
= 27Ω 60
ns
T
d(on)
Turn-on Delay Time 45
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 340
T
f
Fall Time 80
ns
E
off
Turn off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 25A
R
G
= 27Ω 3.2 mJ
T
j
= 25°C 2.05 2.5
V
F
Forward Voltage V
GE
= 0V
I
F
= 25A T
j
= 125°C 1.9 V
T
j
= 25°C 2.1
Q
rr
Reverse Recovery Charge I
F
= 25A
V
R
= 600V
di/dt=800A/µs T
j
= 125°C 4.5 µC
IGBT 0.55
R
thJC
Junction to Case Diode 1.2 °C/W
Temperature sensor NTC
Symbol
Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 5 kΩ
B
25/50
T
25
= 298.16 K 3375 K
−
=
TT
B
R
R
T
11
exp
25
50/25
25
3. Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 3.3 N.m
Wt Package Weight 185 g
T: Thermistor temperature
R
T
: Thermistor value at T
APTGS25X120RTP2
APTG
S
25
X
120
B
TP
APTGS25X120BTP2 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
4
-
4
4. Package outline
PIN 1
PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.