2N5336 2N5338
2N5337 2N5339
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5336 series
devices are silicon epitaxial planar NPN transistors
designed for power amplifier and switching power
supplies where very low saturation voltage and high
speed switching at high current levels are needed.
MARKING: FULL PART NUMBER
2N5336 2N5338
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N5337 2N5339 UNITS
Collector-Base Voltage VCBO 80 100 V
Collector-Emitter Voltage VCEO 80 100 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 5.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 6.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 29 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5336 2N5338
2N5337 2N5339
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=Rated VCBO - 10 - 10 μA
ICEV V
CE=75V, VEB=1.5V - 10 - - μA
ICEV V
CE=90V, VEB=1.5V - - - 10 μA
ICEV V
CE=75V, VEB=1.5V, TC=150°C - 1.0 - - mA
ICEV V
CE=90V, VEB=1.5V, TC=150°C - - - 1.0 mA
ICEO V
CE=75V - 100 - - μA
ICEO V
CE=90V - - - 100 μA
IEBO V
EB=6.0V - 100 - 100 μA
BVCEO I
C=50mA 80 - 100 - V
VCE(SAT) I
C=2.0A, IB=200mA - 0.7 - 0.7 V
VCE(SAT) I
C=5.0A, IB=500mA - 1.2 - 1.2 V
VBE(SAT) I
C=2.0A, IB=200mA - 1.2 - 1.2 V
VBE(SAT) I
C=5.0A, IB=500mA - 1.8 - 1.8 V
hFE V
CE=2.0V, IC=500mA (2N5336, 2N5338) 30 - 30 -
hFE V
CE=2.0V, IC=500mA (2N5337, 2N5339) 60 - 60 -
hFE V
CE=2.0V, IC=2.0A (2N5336, 2N5338) 30 120 30 120
hFE V
CE=2.0V, IC=2.0A (2N5337, 2N5339) 60 240 60 240
hFE V
CE=2.0V, IC=5.0A (2N5336, 2N5338) 20 - 20 -
hFE V
CE=2.0V, IC=5.0A (2N5337, 2N5339) 40 - 40 -
TO-39 CASE
R1 (4-April 2014)
www.centralsemi.com
2N5336 2N5338
2N5337 2N5339
SILICON
NPN TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
2N5336 2N5338
2N5337 2N5339
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fT V
CE=10V, IC=500mA, f=10MHz 30 - 30 - MHz
Cob V
CB=10V, IE=0, f=100kHz - 250 - 250 pF
Cib V
BE=2.0V, IC=0, f=100kHz - 1.0 - 1.0 nF
ton V
CC=40V, IC=2.0A, IB1=200mA - 200 - 200 ns
ts V
CC=40V, IC=2.0A, IB1=IB2=200mA - 2.0 - 2.0 μs
tf V
CC=40V, IC=2.0A, IB1=IB2=200mA - 200 - 200 ns
www.centralsemi.com
R1 (4-April 2014)
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(001)
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