CGH55015F 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree's CGH55015F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. Based on appropriate external match adjustment, the CGH55015F is suitable for 4.9 - 5.5 GHz applications as well. Package Type : 440166 PN: CGH5501 5F Typical Performance 5.5-5.8GHz Parameter (TC = 25C) 5.50 GHz 5.65 GHz 5.80 GHz Units 10.7 11.0 10.7 dB EVM at PAVE = 23 dBm 1.9 1.8 2.0 % EVM at PAVE = 33 dBm 1.5 1.5 1.7 % Drain Efficiency at PAVE = 33 dBm 25 25 25 % 11.5 14.5 10.5 dB Small Signal Gain Input Return Loss Note: Measured in the CGH55015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Features * 5.5 - 5.8 GHz Operation * 15 W Peak Power Capability * >10.5 dB Small Signal Gain * 2 W PAVE < 2.0 % EVM Y PRELIMINAR ch 2009 Rev 2.0 - Mar * 25 % Efficiency at 2 W Average Power * Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications * Designed for Multi-carrier DOCSIS Applications Subject to change without notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage VDSS 84 Volts Gate-to-Source Voltage VGS -10, +2 Volts Power Dissipation PDISS 7 Watts Storage Temperature TSTG -55, +150 C Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 4.0 mA TS 245 C Soldering Temperature1 Screw Torque Thermal Resistance, Junction to Case2 Case Operating Temperature2 60 in-oz RJC 8.0 C/W TC -40, +105 C Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 2 Measured for the CGH55015F at PDISS = 7W. Electrical Characteristics (TC = 25C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.3 -2.3 VDC VDS = 10 V, ID = 3.6 mA Gate Quiescent Voltage VGS(Q) - -3.0 - VDC VDS = 28 V, ID = 115 mA Saturated Drain Current IDS 2.9 3.5 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 84 100 - VDC VGS = -8 V, ID = 3.6 mA DC Characteristics 1 RF Characteristics2,3 (TC = 25C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain GSS 8.5 11.0 - dB VDD = 28 V, IDQ = 115 mA 20.6 25 - % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W Back-Off Error Vector Magnitude EVM1 - 2.5 - % VDD = 28 V, IDQ = 115 mA, PAVE = 23 dBm Error Vector Magnitude EVM2 - 2.0 - % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W Output Mismatch Stress VSWR - 10 : 1 - Y No damage at all phase angles, VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W Input Capacitance CGS - 5.00 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS - 1.32 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD - 0.43 - pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH55015F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. 4 Drain Efficiency = POUT / PDC. Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical WiMAX Performance 14 2 13 1 12 0 11 -1 10 -2 9 -3 8 -4 7 -5 6 -6 5 S21 4 S11 (dB) S21 (dB) Small Signal S-Parameters vs Frequency of CGH55015F in the CGH55015-TB Gain and Input Retrun Loss vs Frequency of VCGH55015F = 28 V, IDQ V,Idq=115 = 115 mA mA Vdd=28 DD -7 S11 -8 3 -9 2 -10 1 -11 0 -12 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1 Frequency (GHz) 30% 2.4 27% 1.8 24% EVM (%) 3.0 EVM 1.2 Drain Efficiency 0.6 0.0 5.45 21% Drain Efficiency EVM and Efficiency of CGH55015 vs. Frequency in the CGH55015-TB EVM & Efficiency of CGH55015 vs. Freqeuncy VDD = 28Vdd=28V,Idq=115 V, IDQ = 115 mA, POUT mA,Pout=33 dBm= 2.5 W 18% 5.50 5.55 5.60 5.65 5.70 5.75 5.80 15% 5.85 Frequency (GHz) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical WiMAX Performance Drain Efficiency and Gain vs Power Output of the CGH55015F in the CGH55015-TB EVM and Drain Efficiency vs Output Power VDD = 28 V, IDQGain, = 115 mA, 802.16-2004 OFDM, PAR = 9.8 dB Vdd = 28 V, Idq=115 mA 14 35 5.65 GHz (Gain) 5.80 GHz (Gain) 5.50 GHz (Efficiency) 5.65 GHz (Efficiency) 5.80 GHz (Efficiency) 30 10 25 8 20 6 15 4 10 2 5 0 Drain Efficiency (%) Gain (dB) 12 5.50 GHz (Gain) 0 15 20 25 30 35 Power Output (dBm) Typical EVM and Drain Efficiency Output Power ofCGH55015F CGH55015F in the CGH55015-TB at Typicalvs EVM vs Output Power of 5.50 GHz, 5.65GHz, 5.80GHz 5.50 GHz, 5.65 GHz, 5.80 GHz, 802.16-2004 OFDM, PAR=9.8 dB 14.0 35 5.50 GHz (EVM) 5.65 GHz (EVM) 5.80 GHz (EVM) 5.50 GHz (Efficiency) 5.65 GHz (Efficiency) 5.80 GHz (Efficiency) 30 10.0 25 8.0 20 6.0 15 4.0 10 2.0 5 0.0 Drain Efficiency (%) EVM (%) 12.0 0 15 20 25 30 35 Power Output (dBm) Note: Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF. Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical DOCSIS Performance DOCSIS Modulation Error Ratio vs Power Output of CGH55015F 40 5.50 GHz 39 5.65 GHz Modulation Error Ratio (dB) 5.80 GHz 38 37 36 35 34 33 15 20 25 30 35 40 Power Output (dBm) Note: MER is the metric of choice for cable systems and can be related to EVM by the following equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the "maximum-to-average constellation power ratio" which varies with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS DOCSIS EVM vs Power Output of CGH55015F in Broadband Amplifier Circuit 1.6 1.4 1.2 EVM (%) 1.0 0.8 5.50 GHz 5.65 GHz 0.6 5.80 GHz 0.4 0.2 0.0 15 20 25 30 35 40 Power Output (dBm) Note: Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB. Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 5500 34.4 - j0.8 20 - j5.3 5650 43.3 - j4.8 22.5 - j5.7 5800 49.8 - j14.3 24.9 - j7.1 Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package. Note 2. Impedences are extracted from the CGH55015-TB demonstration amplifier and are not source and load pull date derived from the transistor. Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55015-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty C1 CAP, 1.2pF, +/-0.1 pF, 0603, ATC 600S 1 C2 CAP, 0.2pF, +/-0.05 pF, 0402, ATC 600L 1 C9 CAP, 0.5pF,+/-0.05pF, 0603, ATC 600S 1 C4,C11 CAP, 18pF, +/-5%, 0603, ATC 600S 2 C5,C12 CAP, 39pF +/-5%, 0603, ATC 600S 2 C6,C13 CAP, CER, 180pF, 50V, +/-5%, C0G, 0603 2 C7,C14 CAP, CER, 0.1UF, 50V, +/-10%, X7R, 0805 2 CAP, 10UF, 16V, SMT, TANTALUM 1 C15 CAP, 1.0UF 10%, 100V, 1210, X7R 1 C16 CAP, 33UF, 100V, ELECT, FK, SMD 1 R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 1/16W, 0603, 1%, 22 OHMS 1 J1 HEADER RT> PLZ .1 CEN LK 5 POS 1 CONN, SMA, FLANGE 2 - PCB, RO4350B, Er = 3.48, h = 20 mil 1 - CGH55015 1 C8 J3,J4 CGH55015F-TB Demonstration Amplifier Circuit Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH55015-TB Demonstration Amplifier Circuit Schematic CGH55015-TB Demonstration Amplifier Circuit Outline Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Typical Package S-Parameters for CGH55015 (Small Signal, VDS = 28 V, IDQ = 115 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.894 -133.87 17.74 104.03 0.031 17.114 0.382 -111.59 600 MHz 0.888 -142.35 15.16 98.47 0.032 12.174 0.369 -119.57 700 MHz 0.885 -148.93 13.20 93.83 0.032 8.163 0.361 -125.68 800 MHz 0.882 -154.22 11.67 89.82 0.033 4.775 0.356 -130.45 900 MHz 0.880 -158.62 10.45 86.23 0.033 1.824 0.354 -134.27 1.0 GHz 0.879 -162.36 9.45 82.96 0.033 -0.809 0.354 -137.39 1.1 GHz 0.878 -165.62 8.63 79.93 0.033 -3.205 0.355 -139.98 1.2 GHz 0.878 -168.50 7.93 77.07 0.033 -5.416 0.357 -142.19 1.3 GHz 0.877 -171.11 7.33 74.36 0.033 -7.483 0.360 -144.09 1.4 GHz 0.877 -173.49 6.82 71.75 0.033 -9.431 0.364 -145.77 1.5 GHz 0.877 -175.68 6.37 69.24 0.033 -11.282 0.368 -147.28 1.6 GHz 0.877 -177.74 5.98 66.80 0.032 -13.052 0.372 -148.66 1.7 GHz 0.877 -179.67 5.63 64.43 0.032 -14.751 0.377 -149.94 1.8 GHz 0.877 178.49 5.32 62.10 0.032 -16.390 0.382 -151.14 1.9 GHz 0.877 176.74 5.05 59.83 0.032 -17.975 0.387 -152.29 2.0 GHz 0.877 175.05 4.79 57.59 0.032 -19.512 0.392 -153.39 2.1 GHz 0.878 173.41 4.57 55.38 0.032 -21.005 0.397 -154.47 2.2 GHz 0.878 171.83 4.36 53.21 0.031 -22.458 0.403 -155.52 2.3 GHz 0.878 170.28 4.17 51.06 0.031 -23.874 0.408 -156.56 2.4 GHz 0.878 168.76 4.00 48.93 0.031 -25.255 0.414 -157.59 2.5 GHz 0.878 167.27 3.84 46.82 0.031 -26.603 0.420 -158.62 2.6 GHz 0.879 165.80 3.70 44.74 0.030 -27.919 0.425 -159.65 2.7 GHz 0.879 164.35 3.56 42.66 0.030 -29.204 0.431 -160.69 2.8 GHz 0.879 162.91 3.44 40.61 0.030 -30.460 0.436 -161.73 2.9 GHz 0.879 161.47 3.32 38.56 0.030 -31.687 0.442 -162.78 3.0 GHz 0.880 160.05 3.21 36.53 0.029 -32.886 0.447 -163.84 3.2 GHz 0.880 157.21 3.02 32.49 0.029 -35.198 0.458 -165.99 3.4 GHz 0.881 154.37 2.84 28.47 0.028 -37.398 0.468 -168.19 3.6 GHz 0.881 151.51 2.69 24.48 0.028 -39.484 0.477 -170.44 3.8 GHz 0.881 148.61 2.56 20.51 0.027 -41.454 0.486 -172.76 4.0 GHz 0.881 145.67 2.44 16.53 0.026 -43.302 0.495 -175.13 4.2 GHz 0.882 142.68 2.34 12.55 0.026 -45.024 0.503 -177.57 4.4 GHz 0.882 139.62 2.24 8.57 0.025 -46.613 0.510 179.92 4.6 GHz 0.882 136.48 2.16 4.56 0.025 -48.059 0.516 177.34 4.8 GHz 0.882 133.25 2.08 0.53 0.024 -49.355 0.522 174.69 5.0 GHz 0.881 129.93 2.01 -3.54 0.023 -50.491 0.528 171.95 5.2 GHz 0.881 126.51 1.95 -7.65 0.023 -51.458 0.532 169.13 5.4 GHz 0.881 122.97 1.89 -11.80 0.022 -52.249 0.536 166.21 5.6 GHz 0.881 119.31 1.84 -16.02 0.022 -52.858 0.540 163.19 5.8 GHz 0.880 115.52 1.79 -20.29 0.022 -53.284 0.543 160.06 6.0 GHz 0.880 111.59 1.75 -24.65 0.021 -53.533 0.545 156.81 Download this s-parameter file in ".s2p" format at http://www.cree.com/products/wireless_s-parameters.asp Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Product Dimensions CGH55015F (Package Type -- 440166) PRELIMINARY CREE Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639 Copyright (c) 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH55015 Rev 2.0 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless