BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 -- 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit. tp VDS PL Gp RLin D Mode of operation f Pdroop(pulse) tr tf (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) (ns) pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H0514L-130 (SOT1135A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 sym112 2 BLL6H0514LS-130 (SOT1135B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 3 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H0514L-130 - flanged ceramic package; 2 mounting holes; 2 leads SOT1135A BLL6H0514LS-130 - earless flanged ceramic package; 2 leads SOT1135B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 100 V VGS gate-source voltage 0.5 +13 V ID drain current - 18 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 2 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 C; PL = 130 W Typ Unit tp = 100 s; = 10 % 0.17 K/W tp = 200 s; = 10 % 0.22 K/W tp = 300 s; = 10 % 0.25 K/W tp = 100 s; = 20 % 0.23 K/W tp = 1 ms; = 10 % 0.36 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 630 mA 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 135 mA 1.3 1.8 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 15.8 18 - A nA IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 gfs forward transconductance VDS = 10 V; ID = 135 mA 806 - 1578 mS RDS(on) drain-source on-state resistance VGS = VGS(th) + 6.25 V; ID = 135 mA - 200 275 m Table 7. RF characteristics Mode of operation: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 50 mA; f = 1.2 GHz to 1.4 GHz; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter PL output power VDS drain-source voltage Gp power gain RLin input return loss PL = 130 W 7 10 - dB D drain efficiency PL = 130 W 45 50 - % Pdroop(pulse) pulse droop power PL = 130 W - 0 0.3 dB tr rise time PL = 130 W - 20 50 ns tf fall time PL = 130 W - 6 50 ns BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 Conditions Min Typ Max Unit 130 - - W PL = 130 W - - 50 V PL = 130 W 15 17 - dB (c) NXP B.V. 2010. All rights reserved. 3 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 6.1 Ruggedness in class-AB operation The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA; PL = 130 W; f = 1.2 GHz to 1.4 GHz; tp = 300 s; = 10 %. 7. Application information 7.1 Impedance information Table 8. Typical impedance f ZS ZL MHz 1200 1.21 j3.44 2.40 j0.63 1300 1.56 j4.49 2.30 j0.87 1400 2.21 j4.86 2.00 j1.71 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 4 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 7.2 Performance curves 001aam262 20 Gp (dB) 60 D (%) Gp RLin (dB) 50 16 12 40 12 8 30 8 4 20 4 16 D 0 1.15 1.25 0 1.15 10 1.45 1.35 001aam263 20 1.25 1.35 f (GHz) VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. Fig 2. Power gain and drain efficiency as function of frequency; typical values VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. Fig 3. 001aam264 20 1.45 f (GHz) Input return loss as a function of frequency; typical values 001aam265 60 D (%) Gp (dB) 16 50 (1) (2) (3) 12 40 8 30 4 (1) (2) (3) 20 0 10 0 40 80 120 160 0 40 PL (W) VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. 160 VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz (3) f = 1.4 GHz Power gain as a function of load power; typical values 120 PL (W) (1) f = 1.2 GHz Fig 4. 80 Fig 5. Drain efficiency as function of load power; typical values BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 5 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 001aam266 160 PL (W) 120 80 (1) (2) (3) 40 0 0 1 2 3 4 Pi (W) VDS = 50 V; IDq = 50 mA; tp = 300 s; = 10 %. (1) f = 1.2 GHz (2) f = 1.3 GHz (3) f = 1.4 GHz Fig 6. Load power as a function of input power; typical values 8. Test information R2 C3 C9 C11 C8 C2 C1 C4 C10 C5 C13 C12 R1 C6 C7 001aam267 Printed-Circuit Board (PCB) material: Duroid 6006 with r = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 7. Component layout BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 6 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Table 9. List of components See Figure 7 for component layout. Component Description Value Remarks C1 multilayer ceramic chip capacitor 10 F; 50 V C2, C11 multilayer ceramic chip capacitor 1 nF [1] C3, C4, C6, C9, C10 multilayer ceramic chip capacitor 100 pF [2] C5, C7, C8 multilayer ceramic chip capacitor 43 pF [2] C12 electrolytic capacitor 220 F; 63 V C13 multilayer ceramic chip capacitor 1 nF R1 SMD resistor 10 SMD 0603 R2 wirewound lead resistor 2.61 ; 0.25 W fitted in series with C13 [1] American Technical Ceramics type 700A or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 [3] fitted vertically in series with R2 (c) NXP B.V. 2010. All rights reserved. 7 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT1135A D A F D1 U1 B q C c 1 H p U2 E1 w1 3 E B A A 2 b w2 C 0 5 mm 10 mm scale Dimensions Unit(1) Q A max 4.65 nom min 3.76 H p Q 5.26 b 0.18 9.65 9.65 9.65 9.65 1.14 c D D1 E E1 F 19.94 3.30 1.70 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 2.92 1.45 q U1 U2 w1 w2 20.45 9.91 15.24 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.130 0.067 inches nom 0.6 min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.115 0.057 0.25 0.51 20.19 9.65 0.805 0.39 0.01 0.02 0.795 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1135A Fig 8. sot1135a_po European projection Package outline SOT1135A BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 8 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H E1 U2 2 b w2 D 0 Q 5 10 mm scale Dimensions Unit(1) A H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89 18.92 1.45 9.65 9.65 max 0.183 0.207 0.007 0.38 0.38 0.38 0.38 0.045 0.785 0.067 inches nom min 0.148 0.197 0.004 0.37 0.37 0.37 0.37 0.035 0.745 0.057 0.39 0.39 0.38 0.38 mm E max 4.65 nom min 3.76 b c D D1 E E1 F w2 0.51 0.02 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC JEITA Issue date 09-10-12 09-12-14 SOT1135B Fig 9. sot1135b_po European projection Package outline SOT1135B BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 (c) NXP B.V. 2010. All rights reserved. 9 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL6H0514L-130_0514LS-130 v.2 20100913 Product data sheet - BLL6H0514L-130_ 0514LS-130 v.1 Modifications: BLL6H0514L-130_0514LS-130 v.1 * Section 1.1 on page 1: Caution about ESD has been moved to Section 10 on page 10. * The status of this data sheet has been changed to Product data sheet. 20100809 Preliminary data sheet BLL6H0514L-130_0514LS-130 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 -- 13 September 2010 - - (c) NXP B.V. 2010. All rights reserved. 10 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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All rights reserved. 11 of 13 BLL6H0514L(S)-130 NXP Semiconductors LDMOS driver transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. 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Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 September 2010 Document identifier: BLL6H0514L-130_0514LS-130