45 A
60 A
N EW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.41, .56 SERIES
Bulletin I27131 rev. C 09/97
1
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Parameters IRK.41 IRK.56 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS)
(*) 100 135 A
ITSM @ 50Hz 850 1310 A
IFSM @ 60Hz 890 1370 A
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2t 36.1 85.0 KA2s
VRRM
range 400 to 1600 V
TSTG - 40 to 125 oC
TJ - 40 to125 oC
(*) As AC switch.
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configura-
tions. The semiconductor chips are electrically iso-
lated from the base plate, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase
bridges or AC controllers. These modules are intended
for general purpose high voltage applications such as
high voltage regulated power supplies, lighting
circuits, and temperature and motor speed control
circuits.
45 60 A
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
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IRK.41, .56 Series
2
Bulletin I27131 rev. C 09/97
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IT(AV) Max. average on-state
current (Thyristors) 45 60 180o conduction, half sine wave,
IF(AV) Maximum average 45 60 TC = 85oC
forward current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle 850 1310 t=10ms No voltage
or non-repetitive on-state 890 1370 t=8.3ms reapplied
IFSM or forward current 715 1100 t=10ms 100% VRRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms TJ = 25oC,
985 1520 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
3.3 0 7.8 2 t=8.3ms reapplied
2.56 6.05 t=10ms 100% VRRM
2.3 3 5.5 3 t=8.3ms reapplied
4.42 10.05 t=10ms TJ = 25oC,
4.03 9.60 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing (1) 36.1 85.6 KA2s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 H i gh level (4)
rt Max. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 Hi gh level (4)
VTM Max. peak on-state or ITM = π x IT(AV) TJ = 25oC
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V DRM,
of rise of turned on ITM =π x I T(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
IL Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
TJ = TJ max
TJ = TJ max
Parameters IRK.41 IRK.56 Units Conditions
100 135
(1) I2t for time tx = I2t x tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
On-state Conduction
IH Max. holding current 200
Initial TJ = TJ max.
150 A/µs
A
KA2s
V
m
1.81 1.54 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = TJ max.
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IRK.41, .56 Series
3
Bulletin I27131 rev. C 09/97
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TJ Junction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.23 0.20 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
- 40 to 125
0.1
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16 S90.
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
IRRMMax. peak reverse and
IDRMoff-state leakage current
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
15 mA TJ = 125 oC, gate open circuit
500 V/µs
Blocking
VINS RMS isolation voltage V
Triggering
PGM Max. peak gate power 10 10
PG(AV) Max. average gate power 2.5 2.5
IGM Max. peak gate current 2.5 2.5 A
-VGM Max. peak negative
gate voltage
4.0 TJ = - 40°C
2.5 TJ = 25°C
1.7 TJ = 125°C
270 TJ = - 40°C
150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Parameters IRK.41 IRK.56 Units Conditions
0.25 V
6 mA
Anode supply = 6V
resistive load
VGT Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
IGT Max. gate current
required to trigger
W
V
10
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
Parameters IRK.41 IRK.56 Units Conditions
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IRK.41, .56 Series
4
Bulletin I27131 rev. C 09/97
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Sine half wave conduction Rect. wave conduction
Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 °C/W
Outlines Table
IRKT../.. (*)
IRKL../.. (*)
IRKH../.. (*)
(*) For terminals connections, see Circuit configurations Table
All dimensions in millimeters (inches)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.1 ± 0.3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
5.8 ± 0.25
(0.16 ± 0.01)
4
Pitch 4.0 ± 0.2
(0.23 ± 0.01)
(0.25 ± 0.01)
6.3 ± 0.3
576
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.1 ± 0.3
(0.24 ± 0.01) 24 ± 0. 5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0. 81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.16 ± 0.01)
4
Pitch 4.0 ± 0.2
(0.25 ± 0.01)
6.3 ± 0.3
5
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.1 ± 0.3
(0.24 ± 0.0 1) 24 ± 0 . 5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.1 6 ± 0.01)
Pitch 4 .0 ± 0.2
(0.25 ± 0.01)
6.3 ± 0.3
76
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.0 2)
(0.79 ± 0.02)
1
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.41, .56 Series
5
Bulletin I27131 rev. C 09/97
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IRK T 56 / 16 S90
Device Code
1 2 3 4 5
1 - Module type
2 - Circuit configuration (See Circuit Configuration table)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
* * Available with no auxiliary cathode.
To specify change: 41 to 42
56 to 57
e.g. : IRKT57/16 etc.
Ordering Information Table
IRK.57 types
With no auxiliary cathode
Circuit Configurations Table
IRKT IRKH IRKL
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
6
4
13.8 (0.53)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 10 20 30 40 5
0
Maximum Allowab le Case Temperature ( °C
)
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
80
90
100
110
120
130
0 20 40 60 8
0
DC
30°60° 90° 120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C
)
Conduction Period
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
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IRK.41, .56 Series
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Bulletin I27131 rev. C 09/97
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Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
0 20 40 60 8
0
DC
180°
120°
90°
60°
30° RMS Limit
Conducti on Peri od
Maxim um Average On-state Power Loss (W
)
Average On-state Current (A)
IRK.41.. Series
Per Juncti on
T = 125°C
J
0
10
20
30
40
50
60
70
0 10 20 30 40
50
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
Maximum Av erage On-state Power Loss (W
)
Average On-state Current (A)
IRK.41.. Series
Per Junction
T = 125° C
J
300
400
500
600
700
800
1 10 100
Nu mber Of Equa l Ampl itude Half Cycle Current Pulses (N
)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
IRK.41.. Series
Per Junction
300
400
500
600
700
800
900
0.01 0.1
1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren
t
Versus Pulse Train Duration. Cont r o
l
Initial T = 125°C
No Voltage Reapplied
Rate d V Reapplied
RRM
J
Of Conduction May Not Be Maintained
.
Peak Half Sine Wave On-state Current (A
)
IRK.41.. Series
Per Junction
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperatu re (°C
)
3 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W -Delta R
5 K/W
thSA
0
20
40
60
80
100
120
140
0 20
40
60
80
100
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.41.. Series
Per Module
T = 125°C
J
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Bulletin I27131 rev. C 09/97
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Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
)
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Del ta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 20 40 60 80 100
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.41.. Series
Sin gle Phase Bridge
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowab le Ambient Temperature (°C
)
1K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/
W - Del
ta R
thSA
0
50
100
150
200
250
300
350
400
450
500
0 20 40 60 80 100 120 140
Total Output Current (A)
Maximum Total Power Loss (W)
12
(Rect)
3 x IRK.41.. Series
Three Phase Bridge
Connected
T = 125°C
J
70
80
90
100
110
120
130
0 10 20 30 40 50 60 7
0
Maximum A llowable Case Temperatu re (°C
)
30° 60° 90° 120° 180°
Average On-stat e Current (A)
Condu ction Angl e
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 10
0
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C
)
Conduction Period
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
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IRK.41, .56 Series
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Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
Fig. 16 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0 20 40 60 80 10
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W
)
Average On-state Current (A)
IRK.56.. Series
Per Junction
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
0 10 20 30 40 50
180°
12
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Aver age On-state Power Loss (W
Average On-state Current (A)
IRK.56.. Series
Per Junction
T = 125° C
J
500
600
700
800
900
1000
1100
1200
1 10 100
Number O f Equal Amplitude Half Cyc le Current P ul ses (N
)
Initi al T = 125°C
@ 60 Hz 0.008 3 s
@ 50 Hz 0.010 0 s
At Any Rated Load Condition And With
Rat ed V Applied Following Surge .
RRM J
Peak Half Sine Wave On-state Current (A
)
IRK.56.. Series
Per Junction
400
600
800
1000
1200
1400
0.01 0.1
1
Peak Half Sine Wave On-state Current (A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren
t
Versus Pulse Train Duration. Contro
l
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Of Co nduction May Not Be Maint ained
.
J
RRM
IRK.56.. Series
Per Junction
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
)
4 K/W
2 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.4 K/W
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Max imum Total On- st ate P ower Loss (W)
Cond uction Angle
IRK.56.. Series
Per Module
T = 12 C
J
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Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
)
2 K/W
1 K/W
R = 0.1 K/W - Delta R
thSA
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
18
(Rect)
2 x IRK.56.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C
)
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160 180
Total Output Current ( A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.56.. Series
Th ree Phase Bridge
Connected
T = 125°C
J
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4
.5
T = 25 °C
J
Insta ntaneou s On -state Current (A)
Instantaneous On-state Voltage (V)
T = 12 C
J
IRK.56.. Series
Per Junction
1
10
100
1000
0 1 2 3 4 5 6
7
T = 25°C
J
Instantaneous On -state Current ( A)
Instantaneous On-state Voltage (V)
T = 12 C
J
IRK.41. . Series
Per Junction
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Fig. 23 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
Fig. 24 - Gate Characteristics
30
40
50
60
70
80
90
100
110
10 20 30 40 50 60 70 80 90 10
Maximum Reverse Recovery Current - Irr (A
Rate Of Fall O f Forward Current - di/dt (A/µ
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
100
150
200
250
300
350
400
450
500
10 20 30 40 50 60 70 80 90 10
0
100 A
50 A
Rate Of F all Of On-state Cu rrent - di /dt (A/µ
s)
Maximum Reverse Re covery Charge - Qrr (µC
)
I = 200 A
TM
20 A
10 A
IRK.41.. Seri es
IRK.56.. Seri es
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 1
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W
)
Per J unct ion
Steady State Value:
R = 0.46 K/W
R = 0.40 K/W
(DC Operation) IRK.41.. Series
IRK.56.. Series
thJC
thJC
0.1
1
10
100
0.001 0.01 0. 1 1 10 100 100
0
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD IGD Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.41../.56.. Series
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