V
RRM
= 800 V - 1600 V
I
F
= 400 A
Features
• High Surge Capability DO-9 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage
V
RRM
V
• Types from 800 V to 1600 V V
RRM
Silicon Standard
Recovery Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1600
Conditions S400K (R) S400Q (R) S400Y (R)
1200
S400K thru S400YR
2. Reverse polarity (R): Stud is anode.
Repetitive
peak
reverse
voltage
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
0.14
400 400 400
8640 8640 8640
1131
1600
1.2 1.2
-55 to 150
12
1200800
10
S400Y (R)
1.2
10 10
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
S400K (R)
0.14 0.14
V
R
= 50 V, T
j
= 175 °C 12 12
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 120 °C
Conditions
848566
S400Q (R)
V
R
= 50 V, T
j
= 25 °C
I
F
= 400 A, T
j
= 25 °C
Reverse current I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
S400K thru S400YR
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
S400K thru S400YR
DO-9 (DO--205AB)
D
H
I
F
B
G
A
E
C
Inches Millimeters
Min Max Min Max
A M 20 * P 1.5
B ----- 1.10 ----- 27.94
C 1.24 1.25 31.5 31.90
D 5.31 5.98 135 152
E 0.78 0.828 19.60 21.03
F 0.470 0.530 11.94 13.46
G ----- 1.122 ----- 28.5
H ----- 0.787 ----- 20.0
I 0.330 0.350 8.38 8.89
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
