PD - 96116 IRF8714PbF Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems HEXFET(R) Power MOSFET VDSS Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free RDS(on) max Qg 8.7m:@VGS = 10V 8.1nC 30V A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Description The IRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 ID @ TA = 25C 14 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 110 ID @ TA = 70C 11 c PD @TA = 25C Power Dissipation 2.5 PD @TA = 70C Power Dissipation 1.6 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W W/C C 0.02 -55 to + 150 Thermal Resistance Parameter RJL RJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 Notes through are on page 9 www.irf.com 1 08/01/06 IRF8714PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ Min. Typ. Max. Units 30 --- --- Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 0.021 7.1 --- 8.7 Gate Threshold Voltage --- 1.35 10.9 1.80 13 2.35 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -6.0 --- --- 1.0 IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 nA VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V Gate-to-Source Reverse Leakage Forward Transconductance --- 71 --- --- -100 --- S VGS = -20V VDS = 15V, ID = 11A Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 8.1 1.9 12 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 1.0 3.0 --- --- Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 2.2 4.0 --- --- Qoss Rg Output Charge Gate Resistance --- --- 4.8 1.6 --- 2.6 td(on) tr Turn-On Delay Time Rise Time --- --- 10 9.9 --- --- td(off) tf Turn-Off Delay Time Fall Time --- --- 11 5.0 --- --- Ciss Coss Input Capacitance Output Capacitance --- --- 1020 220 --- --- Crss Reverse Transfer Capacitance --- 110 --- RDS(on) VGS(th) VGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 14A V e e VGS = 4.5V, ID = 11A VDS = VGS, ID = 25A mV/C VDS = VGS, ID = 25A A VDS = 24V, VGS = 0V VDS = 15V nC VGS = 4.5V ID = 11A See Figs. 15 & 16 nC VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A ns pF RG = 1.8 See Fig. 18 VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 65 Units mJ --- 11 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current --- --- 3.1 ISM (Body Diode) Pulsed Source Current --- --- 110 VSD (Body Diode) Diode Forward Voltage --- --- 1.0 V S p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge --- --- 14 15 21 23 ns nC TJ = 25C, IF = 11A, VDD = 15V di/dt = 300A/s ton Forward Turn-On Time 2 c MOSFET symbol A D showing the integral reverse G e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8714PbF 1000 1000 ID, Drain-to-Source Current (A) 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 1 0.1 0.01 2.3V 10 1 2.3V 60s PULSE WIDTH 0.001 1 10 0.1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 T J = 150C 10 T J = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 ID = 14A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF8714PbF 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 11A C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 100 VDS= 24V VDS= 15V 4.0 3.0 2.0 1.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 6 8 10 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 4 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C T J = 25C 10 1 1msec 0.1 100sec 10 10msec 1 T A = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 1.4 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8714PbF 2.5 VGS(th) , Gate Threshold Voltage (V) 14 ID, Drain Current (A) 12 10 8 6 4 2 0 2.0 ID = 25A 1.5 1.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) T A , Ambient Temperature (C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 J 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 A 1 2 2 3 3 4 4 Ci= i/Ri Ci= i/Ri 0.001 1E-006 1E-005 0.0001 0.001 A Ri (C/W) i (sec) 1.9778 0.000165 7.4731 0.022044 26.2617 0.82275 14.2991 28.4 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF8714PbF 300 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) 25 ID = 14A 20 15 TJ = 125C 10 T J = 25C ID TOP 0.82A 1.0A BOTTOM 11A 250 200 150 100 50 5 0 3 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V L VDS DUT DRIVER 0 D.U.T RG IAS 20V L tp 0.01 + - VDD 1K 20K VCC S A I AS Fig 15. Gate Charge Test Circuit Fig 14. Unclamped Inductive Test Circuit and Waveform Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 6 www.irf.com IRF8714PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD VDS 90% D.U.T. + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit www.irf.com 10% VGS td(on) tr td(off) tf Fig 18b. Switching Time Waveforms 7 IRF8714PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) ' ' ,0 % $ + >@ ( ; $ $ E F ' ( H H + . / \ $ H H ;E >@ $ $ ,1& + (6 0 ,1 0 $; % $6 ,& % $6 ,& 0 ,//,0 ( 7(5 6 0 ,1 0 $; % $6,& %$6 ,& .[ & \ >@ ;/ ;F & $ % )22735,17 127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'(<:: 3 ',6*1$7(6/($')5(( 352'8&7237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com IRF8714PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.1mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007 www.irf.com 9