SM6T Series
Vishay General Semiconductor
Document Number: 88385
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 600 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VBR 6.8 V to 220 V
PPPM 600 W
PD5.0 W
IFSM (uni-directional only) 100 A
TJ max. 150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation on 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 600 W
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3) IPPM See next table A
Power dissipation on infinite heatsink TA = 50 °C PD5.0 W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2) IFSM 100 A
Operating junction and storage temperature range TJ, TSTG - 65 to +150 °C
SM6T Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88385
Revision: 21-Oct-08
2
Notes:
(1) For bi-directional devices add suffix “CA”
(2) VBR measured after IT applied for 300 µs square wave pulse
(3) For bipolar devices with VR = 10 V or under, the IT limit is doubled
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T (2)
(V)
TEST
CURRENT
(mA)
STAND-OFF
VOLTAG E
V
RM
(V)
LEAKAGE
CURRENT
(3)
I
RM
AT V
RM
(µA)
CLAMPING
VOLTAGE
V
C
AT I
PP
10/1000 µs
CLAMPING
VOLTAGE
V
C
AT I
PP
8/20 µs
αT
Max.
0-4/°C
UNI BI
MIN. MAX.
(V) (A) (V) (A)
SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7
SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1
SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3
SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8
SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4
SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8
SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2
SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4
SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6
SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7
SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59.0 68 9.8
SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9
SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0
SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4
SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6
SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8
SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8
SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Thermal resistance, junction to ambient air (1) R
θJA 100 °C/W
Thermal resistance, junction to leads RθJL 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM6T10A-E3/52 0.096 52 750 7" diameter plastic tape and reel
SM6T10A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel
SM6T10AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel
SM6T10AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel
SM6T Series
Vishay General Semiconductor
Document Number: 88385
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
0.1
1
10
100
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0 255075100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
d
01.0 2.0 3.0 4.0
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
10
100
1000
6000
101 100 200
Uni-Directional
Bi-Directional
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage VWM
0.1
1.0
10
100
0.001 0.01 0.1 10 1 100 1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
200
100
101 100
8.3 ms Single Half Sine-Wave
Uni-Directional Only
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
SM6T Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88385
Revision: 21-Oct-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.220 REF.
DO-214AA (SMB)
Cathode Band
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.086 (2.20)
0.077 (1.95)
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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