1C3D03060E Rev. B
C3D03060E
Silicon Carbide Schottky Diode
Z-Rec™ RectifieR
Features
• 600-VoltSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:300W-450W
Package
TO-252-2 
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFContinuousForwardCurrent
11.5
5.5
3
A
TC=25˚C
TC=135˚C
TC=160˚C
IFRM RepetitivePeakForwardSurgeCurrent 18
13.5 ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 26
23 ATC=25˚C,tP=10mS,HalfSineWaveD=0.3
TC=110˚C,tP=10mS,HalfSineWaveD=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 100 ATC=25˚C,tP=10µS,Pulse
Ptot PowerDissipation 53
23 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
Part Number Package Marking
C3D03060E TO-252-2 C3D03060
PIN1
PIN2 CASE
VRRM = 600 V
IF (TC=135˚C) =5.5A
Qc = 6.7nC
2C3D03060E Rev. B
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.7
2.4 VIF=3ATJ=25°C
IF=3ATJ=175°C
IRReverseCurrent 10
20
50
100 μAVR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotalCapacitiveCharge 6.7 nC
VR=600V,IF=3A
di/dt=500A/μS
TJ=25°C
C TotalCapacitance
155
13
12
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC TO-252PackageThermalResistancefromJunctiontoCase 2.8 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
4.0
5.0
6.0
Forward Current
Current 25C
0.0
1.0
2.0
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Current
Forward Voltage
Current 25C
Current 75C
Current 125C
Current 175C
TJ =25°C
TJ =75°C
TJ =125°C
TJ =175°C
IF Forward Current (A)
VF Forward Voltage (V)
6.0
5.0
4.0
3.0
2.0
1.0
0
0.0 0.5 1.0 1.52.02.53.0
8.0E
-
06
1.0E-05
1.2E-05
1.4E-05
Reverse Current (A)
0.0E+00
2.0E-06
4.0E-06
6.0E-06
8.0E
-
06
0 100 200 300 400 500 600 700 800
Reverse Current (A)
Reverse Bias (V)
14
12
10
8
6
4
2
0
0100200300400500600700800
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°
I
R
Reverse Current (μA)
V
R
Reverse Voltage (V)
3C3D03060E Rev. B
Figure3.CurrentDerating
Figure5.TransientThermalImpedance
Figure4.Capacitancevs.ReverseVoltage
Typical Performance
15
20
25
30
Peak Forward Current (A)
C3D03060A Current Derating
0
5
10
15
20
25
30
25 50 75 100 125 150 175
I
F(PEAK)
Peak Forward Current (A)
T
C
Case Temperature (°
°°
°C)
C3D03060A Current Derating
I
F(PEAK)
Peak Forward Current (A)
T
C
Case Temperature (
°
C
)
*Frequency>1KHz
25 5075100125150175
30
25
20
15
10
5
0
20%Duty*
30%Duty*
50%Duty*
70%Duty*
DC
50
60
70
80
Capacitance (pF)
Capacitance
0
10
20
30
40
50
1 10 100 1000
Capacitance (pF)
Reverse Voltage
1 10 100 1000
80
70
60
50
40
30
20
10
0
C Capacitance (pF)
VR Reverse Voltage (V)
Time (s)
Zth (°C/W)
4C3D03060E Rev. B
70
60
50
40
30
20
10
0
Power Dissipation (W)
T
C
Case Temperature (
°
C
)
255075100125150175
Figure6.PowerDerating
Typical Performance
30.0
40.0
50.0
60.0
70.0
Power Dissipation (W)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
25 50 75 100 125 150 175
Power Dissipation (W)
TcCase Temperature (°C)
POS Inches Millimeters
Min Max Min Max
A .250 .289 6.350 7.341
B.197 .215 5.004 5.461
C.027 .050 .686 1.270
D* .270 .322 6.858 8.179
E .178 .182 4.521 4.623
F .025 .045 .635 1.143
G44˚ 46˚ 44˚ 46˚
H .380 .410 9.652 10.414
J.090TYP 2.286TYP
K 6˚ 8˚ 6˚ 8˚
L.086 .094 2.184 2.388
M.018 .034 .457 .864
N .035 .050 .889 1.270
P.231 .246 5.867 6.248
Q 0.00 .005 0.00 .127
RR0.010TYP R0.254TYP
S .017 .023 .432 .584
T .038 .045 .965 1.143
U.021 .029 .533 .737
Package Dimensions
PackageTO-252-2
Note:
*Tab“D”maynotbepresent
*
5C3D03060E Rev. B
Recommended Solder Pad Layout
Part Number Package Marking
C3D03060E TO-252-2 C3D03060
  TO-252-2
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
.08
VT = VT+If*RT
VT = 1.01+(TJ* -1.26*10-3)
RT =0.14+(TJ* 1.13*10-3)
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C3D03060E Rev. B
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,airtrafccontrolsystems,orweaponssystems.
Notes