DS11015 Rev. B-2 1 of 1 1N5711W
1N5711W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Characteristic Symbol 1N5711W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR70 V
RMS Reverse Voltage VR(RMS) 49 V
Maximum Forward Current IFM 15 mA
Power Dissipation (Note 1) Pd250 mW
Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 600 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +175 °C
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 70 VIR= 10µA
Reverse Leakage Current IR200 nA VR= 50V
Forward Voltage Drop VFM
0.41
1.00 VIF= 1.0mA
IF= 15mA
Junction Capacitance Cj2.0 pF VR= 0V, f = 1.0MHz
Reverse Recovery Time trr 1.0 ns IF= IR= 5.0mA
Irr = 0.1 x IR,R
L= 100Ω
Electrical Characteristics @ TA= 25°C unless otherwise specified
Maximum Ratings @ TA= 25°C unless otherwise specified
Mechanical Data
•Low Forward Voltage Drop
•Guard Ring Construction for Transient
Protection
•Fast Switching Time
•Low Reverse Capacitance
•Surface Mount Package Ideally Suited for
Automatic Insertion
•Case: SOD-123, Plastic
•Terminals: Solderable per MIL-STD-202,
Method 208
•Polarity: Cathode Band
•Marking: Date Code and Type Code
Type Code: SA
•Weight: 0.01 grams (approx.)
A B
C
DE
G
H
J
SOD-123
Dim Min Max
A3.55 3.85
B2.55 2.85
C1.40 1.70
D1.35
E0.55 Typical
G0.25
H0.15 Typical
J0.10
All Dimensions in mm
Note: 1. Valid provided that terminals from the case are maintained at ambient temperature.
POWER SEMICONDUCTOR
