0204-125 - GHz Technology, Inc.

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

0204-125

125 Watts, 28 Volts, Class AB

Defcom 225 - 400 MHz

GENERAL DESCRIPTION

The 0204-125 is a double input matched COMMON EMITTER broadband

transistor specifically intended for use in the 225-400 MHz frequency band. It

may be operated in Class AB or C. Gold metallization and silicon diffused

resistors ensure ruggedness and high reliability.

CASE OUTLINE

55JT- Style 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 270 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage 65 Volts

BVebo Emitter to Base Voltage 4.0 Volts

Ic Collector Current 16.0 A

Maximum Temperatures

Storage Temperature - 65 to +150 C

Operating Junction Temperature +200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout

ηc

VSWR

Power Output

Power Input

Power Gain

Efficiency

Load Mismatch Tolerance

F = 400 MHz

Vcc = 28 Volts

125

7.0 8.5

5:1

Watts

BVebo2

BVces2

BVceo2

Cob

hFE2

θjc

Emitter to Base Breakdown

Collector to Emitter Breakdo wn

Output Capacitance

DC - Current Gain

Thermal Resistance

Ie = 10 mA

Ic = 100 mA

Ie = 100 mA

Vcb = 28 V, F = 1 MHz

Vce = 5 V, Ic = 1 A

4.0

20 70 100

0.65

Volts

C/W

Note 2: Per side

Issue August 1996

0204-125

CAPACITORS

C1,C2=39pF ceramic chip capacitor

C3=33pF ceramic chip capacitor

C4=56pF ceramic chip capacitor

C5=18pF ceramic chip capacitor

C6,C7,C8=27pF ceramic chip capacitor

C9=0.1mF ceramic capacitor

C10=10mF electrolytic capacitor

C11,C12=.5-10pF Johanson

INDUCTORS

L1,L2,L3,L4,L5,L6,L7,L8=printed

on the circuit board

L9,L12=4.7mH RF choke

L10,L11,L13,L14=0.1mH RF choke

RESISTORS

R1,R2=10 OHM, 1/4 W

TRANSISTOR

Q1=0204-125

RF INPUT

Zo=50W

C11 L2

C3 C4

R2 L12

R1 L9

L14

L13

C9 C10

Zo=50W

C12

OUT

August 1996