Preliminary
Product Description
Broomfield, CO 80021 1 EDS-103998 Rev B
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
SBB-1089
SBB-1089Z
50 - 850 MHz, Cascadable
Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• IP3 = 43.1 dBm @ 240MHz
• P1dB = 19.6 dBm @ 500MHz
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
• Low Thermal Resistance
• MSL 1 moisture rating
Applications
• Receiver IF Amplifier
• Cellular , PCS, GSM, UMTS
• Wireless Data, Satellite Terminals
Sirenza Microdevices’ SBB-1089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-1089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-1089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Pb
RoHS Compliant
& Packag
e
Green
Gain & Return Loss vs. Frequency (w / App. Ckt.)
-35
-25
-15
-5
5
15
25
35
50 150 250 350 450 550 650 750 850
Fre quency (MHz )
dB
S22
S21
S11
Symbol Parameters Units Frequency Min. Typ. Max.
70 MHz 15.5
240 MHz 14 15.5 17
400 MHz 15.5
70 MHz 19
240 MHz 18 19
400 MHz 19
70 MHz 42
240 MHz 41.5 43
400 MHz 41
Bandwidth S11, S22: Minimum 10dB Retu rn Loss (typ.) MHz 50 - 850
S11 Input Ret ur n Loss dB 70 -500MHz 18
S22 Output Ret ur n Loss dB 70 -500MHz 16
S12 Reverse Isolation dB 70 -500MHz 18
NF Noise Figure dB 500 MHz 3.2 4.2
VD Device Operating Voltage V 5 5.3
ID Device Operating Current mA 82 90 98
RTH, j-l Thermal Resistance (junction - lead) °C/W 97
dB Small Signal Gain
S21
P1dB Output Power at 1dB Compression dBm
dBm
Test Conditions: VD = 5V ID = 90mA T yp. OIP3 Tone Spacing = 1MHz, Pout per tone = 0 d Bm
TL = 25°C ZS = ZL = 50 Ohms Tested with Bias Tees
IP3 Third Or der Intercept Point
Broomfield, CO 80021 2 EDS-103998 Rev B
SBB-1089 50-850 MHz Cascadable MMIC Amplifier
Preliminary
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Typical RF Performance at Key Operating Frequencies (With 240 MHz Application Circuit)
Data on Charts taken with 240 MHz App. Ckt.
Noi se Fig ure vs. Frequency
0
1
2
3
4
5
6
50 150 250 350 450 550 650 750 850
Fre que ncy (MHz )
dB
25C
-40C
85C
OIP
3
vs. Freque ncy
25
30
35
40
45
50
50 150 250 350 450 550 650 750 850
Fre quency (MHz )
dBm
25C
-40C
85C
P1dB vs. Freque ncy
5
10
15
20
25
50 150 250 350 450 550 650 750 850
Fre quency (MHz )
dBm
25C
-40C
85C
Symbol Parameter Unit 50 70 100 240 400 500 850
S21 Small Signal Gain dB 16 15.5 15.5 15.5 15.5 15.5 15
OIP3 Output Third Order Intercept Point dBm 41.5 42 43 43 41 40 35
P1dB Output Power at 1dB Compression dBm 19 19 19 19 19 19 18
S11 Input Return Loss dB 13 16 17 19 19 18 15
S22 Output Return Loss dB 18 20 21 23 24 23 17
S12 Reverse Isolation dB 18 18 18 18 18 18 18
NF Noise Figure dB 3.5 3.3 3.2 3.1 3.2 3.2 3.4
Frequency (MHz)
Test Conditions: VCC = 5V ID = 90mA Typ. OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
TL = 25°C ZS = ZL = 50 Ohms
Broomfield, CO 80021 3 EDS-103998 Rev B
SBB-1089 50-850 MHz Cascadable MMIC Amplifier
Preliminary
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
S-Parameters taken with Bias T ee over T emperature
Device Current over T emperature (w/Bias T ee)
Cur rent vs. Volta ge Over Temp. (Bias Tee)
0
20
40
60
80
100
120
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Volta ge (V)
Cur r en t (mA)
-40C
25C
85C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre que ncy (MHz)
dB
25C
-40C
85C
S21 vs. Fre quency
5
10
15
20
25
50 150 250 350 450 550 650 750 850
Fre quency (MHz)
dB
25C
-40C
85C
S12 vs. Fr equency
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre que ncy (MHz)
dB
25C
-40C
85C
S22 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre quency (MHz )
dB
25C
-40C
85C
Broomfield, CO 80021 4 EDS-103998 Rev B
SBB-1089 50-850 MHz Cascadable MMIC Amplifier
Preliminary
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
240 MHz Application Circuit S-Parameters over Temperature
Device Current over Temperature (w/App. Ckt.)
Current vs. V oltage Over Temp. (App. Ckt.)
0
20
40
60
80
100
120
1.5 2 2.5 3 3.5 4 4.5 5 5.5
Voltage (V)
Cur r en t (mA)
-40C
25C
85C
S11 vs. Fr equency
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre quency (GHz)
db
25C
-40C
85C
S21 vs. Frequency
0
5
10
15
20
25
50 150 250 350 450 550 650 750 850
Fre quency (GHz)
dB
25C
-40C
85C
S12 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre qu e ncy (GHz)
dB
25C
-40C
85C
S22 vs. Fre quency
-35
-30
-25
-20
-15
-10
-5
50 150 250 350 450 550 650 750 850
Fre quency (GHz)
dB
25C
-40C
85C
Broomfield, CO 80021 5 EDS-103998 Rev B
SBB-1089 50-850 MHz Cascadable MMIC Amplifier
Preliminary
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
RF outRF in
Vs
Lc
1200pF1uF
Cb Cb
SBB-1089
2
4
13
Ls
Application Schematic
Evaluation Board Layout
Application Circuit Element Values
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
Absolute Maximum Ratings
MSL (Moisture Sensitivity Level) Rating: Level 1
Parameter Absolute Limit
Ma. Dvice Current (ID)110 mA
Max Device Voltage (VD)5.5 V
Max. RF Input Power +12 dBm
Max. Operating Dissipated
Power 0.61 W
Max. Junction Temp. (TJ)+150°C
Operating Temp. Range (TL)-40°C to +85° C
Max. Storage Temp. +150°C
Operation of this device beyond any one of these limits may cause
permanent damag e. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
+
Reference
Designator Frequency (MHz)
50 to 850
CB8200pF
LC1200nH LS Coilcraft
LS2.7nH Toko
Broomfield, CO 80021 6 EDS-103998 Rev B
SBB-1089 50-850 MHz Cascadable MMIC Amplifier
Preliminary
303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
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BB1
1
2
3
123
4
Lead Free
Package Marking
BB1Z
1
2
3
123
4
Tin-Lead
Part Number Ordering Information
Bottom View
Side View
Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to package drawing posted at www.sirenza.com for tolerances
Part Number Reel Size Devices / Reel
SBB-1089 7" 1000
SBB-1089Z 7" 1000
