37
VTB Proc ess Photodiodes VTB6061JH
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, three lead TO-8 package. Chip is
isol ated f r om case. The t hi rd l ead allows case t o
be grounded. These diodes have very high
shunt resistance and have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in
2
(37.7 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem per at u r e: -4 0°C t o 11 0°C
Oper ati ng Temp er atur e: -4 0°C t o 11 0°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBO L CHARAC T ER I ST IC TEST C O ND I TI ONS VTB6061JH UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 260 350 µA
TC ISC ISC Temperature Coefficient 2850 K .12 .23 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 490 mV
TC VOC VOC Temperatur e Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 2.0 nA
RSH Shunt Resistance H = 0, V = 10 mV .10 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 8.0 nF
SRSensitivity 365 nm 0.1 A/W
λrange Spectral Application Range 320 1100 nm
λpSpectral Respo nse - Peak 920 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±55 Degrees
NEP Noise Equivalent Power 5.7 x 10-14 (Typ.)
D* Specif ic Detectivit y 1.1 x 10 13 (Ty p.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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