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MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5
September 2015
MOC3061M, MOC3062M, MOC3063M,
MOC3162M, MOC3163M
6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Features
• Simplifies Logic Control of 115/240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
• 600 V Peak Blocking Voltage
• Superior Static dv/dt
– 600 V/μs (MOC306xM)
– 1000 V/μs (MOC316xM)
• Safety and Regulatory Approvals
– UL1577, 4,170 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
• Solenoid/Valve Controls
• Static Power Switches
• Temperature Controls
• AC Motor Starters
• Lighting Controls
• AC Motor Drives
• E.M. Contactors
• Solid State Relays
Description
The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of
logic systems to equipment powered from 115/240 VAC
lines, such as solid-state relays, industrial controls,
motors, solenoids and consumer appliances, etc.
Schematic Package Outlines
MAIN TERM.
NC*
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
ZERO
CROSSING
CIRCUIT
Figure 1. Schematic Figure 2. Package Outlines
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 2
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only withi n the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 40/85/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage ≥ 7mm
External Clearance ≥ 7mm
External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm
RIO Insulation Resistance at TS, VIO = 500 V > 109Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 3
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Parameters Device Value Unit
TOTAL DEVICE
TSTG Storage Temperature All -40 to +150 °C
TOPR Operating Temperature All -40 to +85 °C
TJJunction Temperature Range All -40 to +100 °C
TSOL Lead Solder Temperature All 260 for
10 seconds °C
PDTotal Device Power Dissipation at 25°C Ambient All 250 mW
Derate Above 25°C 2.94 mW/°C
EMITTER
IFContinuous Forward Current All 60 mA
VRReverse Voltage All 6 V
PDTotal Power Dissipation at 25°C Ambient All 120 mW
Derate Above 25°C 1.41 mW/°C
DETECTOR
VDRM Off-State Output Terminal Voltage All 600 V
ITSM Peak Non-Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave) All 1 A
PDTotal Power Dissipation at 25°C Ambient All 150 mW
Derate Above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 4
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristic s
Transfer Characteristics
Zero Crossing Characteristics
Isolation Characteristics
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating
IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and
MOC3163M) and absolute maximum IF (60 mA).
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 30 mA All 1.3 1.5 V
IRReverse Leakage Current VR = 6 V All 0.005 100 μA
DETECTOR
IDRM1 Peak Blocking Current,
Either Direction VDRM = 600 V, IF = 0(1) MOC306XM 10 500 nA
MOC316XM 10 100
dv/dt Critical Rate of Rise of
Off-State Voltage IF = 0 (Figure 11)(2) MOC306XM 600 1500 V/μs
MOC316XM 1000
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
IFT LED T rigger Current
(Rated IFT)Main Terminal
Voltage = 3 V(3)
MOC3061M 15
mA
MOC3062M
MOC3162M 10
MOC3063M
MOC3163M 5
VTM Peak On-State Voltage, Either Direction ITM = 100 mA peak,
IF = rated IFT All 1.8 3.0 V
IHHolding Current, Eith er Direction All 500 μA
Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit
VINH
Inhibit Voltage (MT1-MT2
voltage above which
device will not trigger) IF = rated IFT
MOC3061M
MOC3062M
MOC3063M 12 20 V
MOC3162M
MOC3163M 12 15
IDRM2 Leakage in Inhibited
State IF = rated IFT, DRM = 600 V,
off-state All 2 mA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VISO Isolation Voltage(4) f = 60 Hz, t = 1 Minute 4170 VACRMS
RISO Isolation Resistance VI-O = 500 VDC 1011 Ω
CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 5
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Typical Performance Curves
Figure 3. LED Forward Voltage vs. Forward Current
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
Figure 6. Leakage Current, IDRM vs. Temperature
Figure 4. Trigger Current Vs. Temperature
IF, LED FORWARD CURRENT (mA)
0.1 1 10 100
VF, FORWARD VOLTAGE (V)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
IFT, NORMALIZED
IDRM, LEAKAGE CURRENT (nA)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
PWIN, LED TRIGGER PULSE WIDTH (μs)
101 100
IFT, LED TRIGGER CURRENT (NORMALIZED)
0
2
4
6
8
10
12
14
16
0.1
1
10
100
1000
10000
TA = -40°C
VTM = 3V
NORMALIZED TO TA = 25°C
TA = 25°C
NORMALIZED TO PWIN >> 100μs
TA = 25°C
TA = 85°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 6
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Typical Performance Curves (Continued)
Figure 7. IDRM2, Leakage in Inhibit State vs. Temperature
Figure 9. IH, Holding Current vs. Temperature Figure 10. Inhibit Voltage vs. Temperature
Figure 8. On-State Characteristics
VTM, ON-STATE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
IDRM2, NORMALIZED
VINH, NORMALIZED
IH, HOLDING CURRENT (NORMALIZED)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IF = RATED IFT
NORMALIZED TO TA = 25°C
-4 -3 -2 -1 0 1 2 3 4
ITM, ON-STATE CURRENT (mA)
TA = 25°C
-800
-600
-400
-200
0
200
400
600
800
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
NORMALIZED TO TA = 25°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 7
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
1. 100x scope probes are used, to allow high spee ds and voltages.
2. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then
removing the current. The variable vernier resistor combined with various capacitor combinations allows the dv/dt to
be gradually increased until the D.U .T . con tinues to trigger in response to the applied voltage pulse, ev en after the
LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. tRC is measured at this
point and recorded.
27
2W
2W
100
2W
dV
dt
VERNIER
MOUNT DUT ON
TEMPERATURE CONTROLLED
Cμ PLATE
DIFFERENTIAL
PREAMP
f = 10 Hz
PW = 100 μs
50 Ω PULSE
GENERATOR
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN
82
2W
470pF
0.001
0.005
0.01
0.047
0.47
0.1
56
2W
1N914
20V
1000
1/4W 1N967A
18V
RFP4N100
DUT 20k
X100 PROBE
X100 PROBE
VDRM/VRRM SELECT
6
4
1
2
1000
10 WATT
WIREWOUND
0.33 1000V
POWER
1 M 2W EACH
1.2 M
2W
TEST
0-1000V
10mA
0.047
1000V
Figure 11. Circuit for Static dV Measurement of Power Thyristors
μF
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
μF
μF
μF
μF
μF
μF
μF
dV
dt
Basic Applications
Typical circuit for use when hot line switching is
required. In this circuit the “hot” side of the line is
switched and the load connected to the cold or
neutral side. The load may be connected to either
the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT
of the part, 15mA for the MOC3061M, 10mA for
the MOC3062M, or 5mA for the MOC3063M.
The 39Ω resistor and 0.01μF capacitor are for
snubbing of the triac and is often, but not always,
necessary depending upon the particular triac and
load used.
Suggested method of firing two, back-to-back
SCR’s with a Fairchild triac driver. Diodes
can be 1N4001; resistors, R1 and R2, are
optional 330Ω.
Note:
This optoisolator should not be used to drive
a load directly. It is intended to be a trigger
device only.
Figure 12. Hot-Line Switching Application Circuit
VCC
Rin 1
2
3
6
5
4240 VAC
HOT
NEUTRAL
360Ω
360Ω
MOC3061M
MOC3062M
MOC3063M 39Ω
0.01μF
FKPF12N60
LOAD
Figure 13. Inverse-Parallel SCR Driver Circuit
VCC
Rin
1
2
3
6
5
4
115 VAC
SCR
360Ω
R1 D1
SCR
R2 D2
LOAD
MOC3061M
MOC3062M
MOC3063M
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 8
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Reflow Profile
Figure 14. Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds
Ramp-up Rate (TL to TP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 seconds to 150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsm a x
Tsm i n
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC306XM, MOC316XM Rev. 1.5 9
MOC306XM, MOC316XM — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Ordering Information(5)
Note:
5. The product orderable part number system listed in this table also applies to the MOC3062M, MOC3063M,
MOC3162M, and MOC3163M product families.
Marking Information
Figure 15. Top Mark
Part Number Package Packing Method
MOC3061M DIP 6-Pin Tube (50 Units)
MOC3061SM SMT 6-Pin (Lead Bend) Tube (50 Units)
MOC3061SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
MOC3061VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3061SVM SMT 6-Pin (Le ad Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3061SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
MOC3061TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
MOC3061
1
2
6
43 5
V X YY
Q
Top Mark Definitions
1 Fairchild Logo
2 Device Number
3DIN EN/IEC60747-5-5 Option (only appears on component
ordered with this option)
4 One-Digit Year Code, e.g., ‘5’
5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’
6 Assembly Package Code
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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