CTD253, CDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Type
CTD/CDT253GK08
CTD/CDT253GK12
CTD/CDT253GK14
CTD/CDT253GK16
CTD/CDT253GK18
VRRM
VDRM
V
800
1200
1400
1600
1800
VRSM
VDSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
TVJ=TVJM
TC=85oC; 180o sine 400
253 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
8500
9000
7000
8000
A
ITSM, IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
405000
336000
320000
240000
A2s
i2dt
(di/dt)cr
250
800 A/us
(dv/dt)cr TVJ=TVJM; VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise) 1000 V/us
PGM TVJ=TVJM tp=30us
IT=ITAVM tp=500us 120
60 W
PGAV 20 W
ITRMS, IFRMS
ITAVM, IFAVM
oC
TVJ
TVJM
Tstg
-40...+140
140
-40...+130
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M5)
Terminal connection torque (M8)
_
2.5-5/22-44
12-15/106-132 Nm/lb.in.
Weight 430 g
TVJ=TVJM repetitive, IT=750A
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A non repetitive, IT=250A
diG/dt=1A/us
VRGM 10 V
Typical including screws
DEECorp.
http://store.iiic.cc/
CTD253, CDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol Test Conditions Characteristic Values Unit
IRRM TVJ=TVJM; VR=VRRM; VD=VDRM 70 mA
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
* Keyed gate/cathode twin pins
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
mA
IDRM 40
V
VT, VFIT, IF=750A; TVJ=25oC 1.7
VTO For power-loss calculations only (TVJ=140oC) 0.85 V
rT1.1 m
VD=6V; TVJ=25oC
TVJ=-40oC
VGT 2
3V
VD=6V; TVJ=25oC
TVJ=-40oC
IGT 150
200 mA
VGD TVJ=TVJM; VD=2/3VDRM 0.25 V
IGD 10 mA
IHTVJ=25oC; VD=6V; RGK= 150 mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us 300 mAIL
per thyristor/diode; DC current
per module
RthJC 0.129
0.0645 K/W
per thyristor/diode; DC current
per module
RthJK 0.169
0.0845 K/W
dSCreeping distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tgd 2us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us typ.
VR=100V; dv/dt=50V/us; VD=2/3VDRM
tq200 us
uC
QSTVJ=125oC; IT, IF=400A; -di/dt=50A/us 760
IRM 275 A
DEECorp.
http://store.iiic.cc/
CTD253, CDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 Gate trigger characteristics
Fig. 6 Gate trigger delay time
Fig. 2 i2t versus time (1-10 ms)
DEECorp.
3 x CTD/CDT253
http://store.iiic.cc/
CTD253, CDT253
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
ts
ZthJK
K/W
ts
ZthJC
K/W 30°
DC
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
dR
thJC (K/W)
DC 0.129
180oC0.131
120oC0.131
60oC0.132
30oC0.132
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.099
2 0.0165 0.168
3 0.1091 0.456
RthJK for various conduction angles d:
dR
thJK (K/W)
DC 0.169
180oC0.171
120oC0.172
60oC0.172
30oC0.173
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0033 0.099
2 0.0159 0.168
3 0.1053 0.456
4 0.04 1.36
3 x CTD/CDT253
D E E C o r p .
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