BAS8
5
SCHOTTKY BARRIER DIODE
FEATURES :
* For general purpose applications.
* This diode features low turn-on voltage.
* This device isprotected by a PN junction guard
guard ring against excessive voltage, such as
electrostatic discharges
* This diode is also available in the DO-35 case
with type designation BAT85.
* Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Maximum Ratin
g
s and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Symbol Value Unit
Continuous Reverse Voltage VRV
Continuous Forward Current IFmA
Peak Forward Current IFM mA
Forward Surge Current IFSM mA
Power Dissipation (Infinite Heatsink) PDmW
Thermal Resistance Junction to Ambient Air RθJA °C/W
Junction Temperature TJ°C
Storage temperature range TSTG °C
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 30 - - V
Reverse Current IRVR = 25 V - 0.2 2.0 μA
IF = 1mA - - 0.32
Forward Voltage IF = 10mA - - 0.40
Pulse Test tp <300μs , δ <2% IF = 30mA - 0.5 -
IF = 100mA - - 0.80
Diode Capacitance Cd VR = 1V, f = 1MHz - - 10 pF
IF =10mA to IR = 10mA ,
measured at IR = 1mA
Page 1 of 1 Rev. 02 : September 30, 2006
200(1)
430(1)
125
-55 to + 150
30
200(1)
300(1)
600(1)
V
ns
IR = 10 μA (pulsed)
5--
Test Condition
Parameter
Reverse Recovery Time
VF
Trr
Dimensions in inches and
(
millimeters
)
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.098 (2.50)
Max.
0.079 (2.00)Min.
Certificate TH97/10561QM Certificate TW00/17276EM
