Certificate TH97/10561QM BAS85 Certificate TW00/17276EM SCHOTTKY BARRIER DIODE MiniMELF (SOD-80C) FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in the DO-35 case with type designation BAT85. * Pb / RoHS Free 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. MECHANICAL DATA : 0.079 (2.00)Min. Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit VR 30 V Continuous Reverse Voltage IF Continuous Forward Current (1) mA (1) mA (1) mA (1) mW (1) C/W 200 Peak Forward Current IFM 300 Forward Surge Current IFSM 600 PD Power Dissipation (Infinite Heatsink) Thermal Resistance Junction to Ambient Air 200 RJA 125 C TSTG -55 to + 150 C Junction Temperature Storage temperature range 430 TJ Note: (1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Parameter Reverse Breakdown Voltage Reverse Current Forward Voltage Pulse Test tp <300s , <2% (TJ = 25 C unless otherwise noted) Symbol V(BR)R IR VF Diode Capacitance Cd Reverse Recovery Time Trr Page 1 of 1 Test Condition IR = 10 A (pulsed) Min Typ Max Unit 30 - - V VR = 25 V - 0.2 2.0 A IF = 1mA - - 0.32 IF = 10mA - - 0.40 IF = 30mA - 0.5 - IF = 100mA - - 0.80 VR = 1V, f = 1MHz - - 10 pF - - 5 ns IF =10mA to I R = 10mA , measured at IR = 1mA V Rev. 02 : September 30, 2006