MRF19090SR3 - Freescale Semiconductor / Motorola

MRF19090SR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement - Mode Lateral MOSFET

Designed for Class AB PCN and PCS base station applications with

frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and

multicarrier amplifier applications.

•Typical CDMA Performance: 1930 MHz, 26 Volts

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9 Watts Avg.

Power Gain — 10 dB

Adjacent Channel Power —

885 kHz: -47 dBc @ 30 kHz BW

1.25 MHz: -55 dBc @ 12.5 kHz BW

2.25 MHz: -55 dBc @ 1 MHz BW

•Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW

Output Power

Features

•Internally Matched for Ease of Use

•High Gain, High Efficiency and High Linearity

•Integrated ESD Protection

•Designed for Maximum Gain and Insertion Phase Flatness

•Excellent Thermal Stability

•Characterized with Series Equivalent Large-Signal Impedance Parameters

•RoHS Compliant

•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS -0.5, +65 Vdc

Gate-Source Voltage VGS -0.5, +15 Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD270

1.54

W/°C

Storage Temperature Range Tstg - 65 to +150 °C

Case Operating Temperature TC150 °C

Operating Junction Temperature TJ200 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case RθJC 0.65 °C/W

Table 3. ESD Protection Characteristics

Test Conditions Class

Human Body Model 1 (Minimum)

Machine Model M3 (Minimum)

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Document Number: MRF19090

Rev. 8, 10/2008

Freescale Semiconductor

Technical Data

MRF19090SR3

1930 - 1990 MHz, 90 W, 26 V

LATERAL N - CHANNEL

RF POWER MOSFET

CASE 465C-02, STYLE 1

NI- 880S

RF Device Data

Freescale Semiconductor

MRF19090SR3

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 µA)

V(BR)DSS 65 — — Vdc

Zero Gate Voltage Drain Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS — — 10 µAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS — — 1 µAdc

On Characteristics

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

gfs — 7.2 — S

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc)

VGS(th) 2.0 — 4.0 Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 750 mAdc)

VGS(Q) 2.5 3.8 4.5 Vdc

Drain- Source On- Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on) — 0.10 — Vdc

Dynamic Characteristics

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Crss — 4.2 — pF

Functional Tests (In Freescale Test Fixture)

Two -Tone Common-Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,

f = 1930 MHz, Tone Spacing = 100 kHz)

Gps 10 11.5 — dB

Two -Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,

f = 1930 MHz, Tone Spacing = 100 kHz)

η33 35 — %

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,

f = 1930 MHz, Tone Spacing = 100 kHz)

IMD — -30 -28 dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA,

f = 1930 MHz, Tone Spacing = 100 kHz)

IRL — -12 — dB

Pout, 1 dB Compression Point

(VDD = 26 Vdc, Pout = 90 W CW, f = 1930 MHz)

P1dB — 90 — W

1. Part is internally matched both on input and output.

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MRF19090SR3

RF Device Data

Freescale Semiconductor

Figure 1. MRF19090 Test Circuit Schematic

INPUT

OUTPUT

Z1 Z2

VBIAS

C2 C3

Z3 Z4

DUT

VSUPPLY

Z5 Z7 Z8Z6

C13

C14

C19 C9 C10 C8 C7

C4 C18

C11 C12 C15 C16 C17

C5 C6

B1, B2 2 Ferrite Beads, Round, Ferroxcube #56- 590 - 65 -3B

B3, B34 Ferrite Beads, Surface Mount, Fair- Rite 2743019447

C1, C18 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27280

C2, C5, C8 10 pF Chip Capacitors, ATC #100B100CT500XT

C3 12 pF Chip Capacitor, ATC #100B120CT500XT

C4 0.3 pF Chip Capacitor, ATC #100B0R3CT500XT

C6, C7 120 pF Chip Capacitors, ATC #100B12R1CT500XT

C9, C12 0.1 µF Chip Capacitors, Kemet #CDR33BX104AKYS

C10, C11 1000 pF Chip Capacitors, ATC #100B102JT50XT

C13, C17 22 µF, 35 V Tantalum Chip Capacitors,

Kemet #T491X226K035AT

C14, C16 10 µF, 35 V Tantalum Chip Capacitors,

Kemet #T495X106K035AT

C15, C19 1 µF, 35 V Tantalum Chip Capacitors,

Kemet #T495X105K035AT

L1, L2 8 Turns, #26 AWG, 0.085″ OD, 0.330″

Long, Copper Wire

R1, R2 270 Ω, 1/4 W Chip Resistors, Garrett

Instruments #RM73B2B271JT

Z1 ZO = 50 Ohms

Z2 ZO = 50 Ohms, Lambda = 0.123

Z3 ZO = 15.24 Ohms, Lambda = 0.0762

Z4 ZO = 10.11 Ohms, Lambda = 0.0392

Z5 ZO = 6.34 Ohms, Lambda = 0.0711

Z6 ZO = 5.02 Ohms, Lambda = 0.0476

Z7 ZO = 5.54 Ohms, Lambda = 0.0972

Z8 ZO = 50.0 Ohms, Lambda = 0.194

Z9 ZO = 50.0 Ohms

Raw PCB Material 0.030″ Glass Teflon, εr = 2.55,

2 oz Copper, 3″ x 5″ Dimensions

++++++

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RF Device Data

Freescale Semiconductor

MRF19090SR3

Figure 2. MRF19090 Test Circuit Component Layout

RFB1

C13 C14

C19

C9 C10 RFB2

0.14λ0.212λ

C4 C18

C16 C17

RFB4

C15

C11 C12

RFB3

CUTOUT

MRF19090

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor

signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have

no impact on form, fit or function of the current product.

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MRF19090SR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)

ADJACENT CHANNEL POWER RATIO (dB)

Figure 3. Class AB Performance versus Frequency

f, FREQUENCY (MHz)

10 1940

Figure 4. CDMA Performance ACPR, Gain and

Drain Efficiency versus Output Power

Pout, OUTPUT POWER (WATTS (Avg.))

1920 2000 51900 −35

Figure 5. Third Order Intermodulation Distortion

versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

−55

Figure 6. Intermodulation Products

versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

Figure 7. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

100

1 1

11.5

−50

−40

−30

−15

−25

10.5

1960 1980 15 30

100

101

2020

100

−10

−20

−30

−20

−45

−35

−25

−70

−20

−50

−60

−40

−30

12.5

IRL, INPUT RETURN LOSS (dB)

IMD, INTERMODULATION DISTORTION (dBc)

, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)

Figure 8. Third Order Intermodulation Distortion

and Gain versus Supply Voltage

VDD, DRAIN VOLTAGE (VOLTS)

3224

11.5

12.5

IMD, INTERMODULATION DISTORTION (dBc)

2822

10.5

−80

−40

−60

−30

−50

−70

2.25 MHz

885 kHz

1.25 MHz

VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing

(Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz

(12.5 kHz), 2.25 MHz (1 MHz)

9 Channel Forward

Pilot:0, Paging:1, Traffic:8−13,

Sync:32

IMD, INTERMODULATION DISTORTION (dBc)

950 mA

750 mA

550 mA

VDD = 26 Vdc

f = 1960 MHz

100 kHz Tone Spacing

IMD, INTERMODULATION DISTORTION (dBc)

VDD = 26 Vdc

IDQ = 750 mA

f = 1960 MHz

100 kHz Tone Spacing

Gps , POWER GAIN (dB)

−38

−24

−28

−34

−36

−22

−26

−32

−30

26 30

Pout = 90 W (PEP)

IDQ = 750 mA, f = 1960 MHz

100 kHz Tone Spacing

Gps

IMD

IRL

IMD

Gps

VDD = 26 Vdc

Pout = 90 W (PEP)

IDQ = 750 mA

100 kHz Tone Spacing

20010

950 mA

750 mA

550 mA

VDD = 26 Vdc

f = 1960 MHz

100 kHz Tone Spacing

3rd Order

5th Order

7th Order

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RF Device Data

Freescale Semiconductor

MRF19090SR3

Figure 9. Series Equivalent Source and Load Impedance

MHz

Zsource

Ω

Zload

Ω

1930

1960

1990

4.5 - j6.1

4.3 - j6.1

4.4 - j6.0

1.1 - j4.5

1.1 - j4.4

1.1 - j4.3

VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP)

Zo = 10 Ω

f = 1930 MHz

1990 MHz

f = 1990 MHz

1930 MHz

Zsource Zload

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Zsource

Zload

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MRF19090SR3

RF Device Data

Freescale Semiconductor

PACKAGE DIMENSIONS

CASE 465C- 02

ISSUE D

NI-880S

MRF19090SR3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M−1994.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY

FROM PACKAGE BODY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.905 0.915 22.99 23.24

B0.535 0.545 13.60 13.80

C0.147 0.200 3.73 5.08

D0.495 0.505 12.57 12.83

E0.035 0.045 0.89 1.14

F0.003 0.006 0.08 0.15

H0.057 0.067 1.45 1.70

K0.170 0.210 4.32 5.33

N0.871 0.889 19.30 22.60

R0.515 0.525 13.10 13.30

STYLE 1:

PIN 1. DRAIN

2. GATE

3. SOURCE

SEATING

PLANE

bbb B M

(FLANGE)

ccc B M

bbb B M

(FLANGE)

N(LID)

M(INSULATOR)

ccc B M

aaa B M

R(LID)

S(INSULATOR) S0.515 0.525 13.10 13.30

M0.872 0.888 22.15 22.55

bbb 0.010 REF 0.254 REF

ccc 0.015 REF 0.381 REF

aaa 0.007 REF 0.178 REF

RF Device Data

Freescale Semiconductor

MRF19090SR3

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Engineering Bulletins

•EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

8Oct. 2008 •Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.

•Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN12779, p. 1, 2

•Updated Part Numbers in Figure 1, Test Circuit Schematic, to RoHS compliant part numbers, p. 3

•Added Product Documentation and Revision History, p. 8

MRF19090SR3

RF Device Data

Freescale Semiconductor

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Document Number: MRF19090

Rev. 8, 10/2008