Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF19090SR3 LIFETIME BUY Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. * Typical CDMA Performance: 1930 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 9 Watts Avg. Power Gain -- 10 dB Adjacent Channel Power -- 885 kHz: - 47 dBc @ 30 kHz BW 1.25 MHz: - 55 dBc @ 12.5 kHz BW 2.25 MHz: - 55 dBc @ 1 MHz BW * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930 - 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465C - 02, STYLE 1 NI - 880S Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 W W/C Storage Temperature Range Tstg - 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature TJ 200 C Symbol Value Unit RJC 0.65 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model (c) Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M3 (Minimum) LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Document Number: MRF19090 Rev. 8, 10/2008 MRF19090SR3 1 Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 A) V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc gfs -- 7.2 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.8 4.5 Vdc VDS(on) -- 0.10 -- Vdc Crss -- 4.2 -- pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz, Tone Spacing = 100 kHz) Gps 10 11.5 -- dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz, Tone Spacing = 100 kHz) 33 35 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz, Tone Spacing = 100 kHz) IMD -- - 30 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz, Tone Spacing = 100 kHz) IRL -- - 12 -- dB Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1930 MHz) P1dB -- 90 -- W Off Characteristics On Characteristics LIFETIME BUY Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) 1. Part is internally matched both on input and output. LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) MRF19090SR3 2 RF Device Data Freescale Semiconductor VBIAS B1 B3 B4 B2 VSUPPLY + + + + C13 C14 + C19 C9 C10 C8 C7 L1 C5 C6 C11 C12 + + C15 C16 C17 L2 R1 RF INPUT Z1 Z2 Z3 Z4 C2 LIFETIME BUY C1 B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 R2 Z5 Z6 Z7 RF OUTPUT C3 DUT 2 Ferrite Beads, Round, Ferroxcube #56- 590 - 65 - 3B Ferrite Beads, Surface Mount, Fair- Rite 2743019447 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27280 10 pF Chip Capacitors, ATC #100B100CT500XT 12 pF Chip Capacitor, ATC #100B120CT500XT 0.3 pF Chip Capacitor, ATC #100B0R3CT500XT 120 pF Chip Capacitors, ATC #100B12R1CT500XT 0.1 F Chip Capacitors, Kemet #CDR33BX104AKYS 1000 pF Chip Capacitors, ATC #100B102JT50XT 22 F, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AT 10 F, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AT 1 F, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AT Z9 Z8 C4 L1, L2 C18 8 Turns, #26 AWG, 0.085 OD, 0.330 Long, Copper Wire R1, R2 270 , 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030 Glass Teflon(R), r = 2.55, 2 oz Copper, 3 x 5 Dimensions Figure 1. MRF19090 Test Circuit Schematic LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 + MRF19090SR3 RF Device Data Freescale Semiconductor 3 C10 RFB3 C11 C12 RFB2 RFB1 RFB4 C19 C13 C14 C6 C5 C7 C15 C8 C16 C17 L2 L1 R1 C2 C3 C4 C1 LIFETIME BUY CUTOUT C18 R2 0.14 0.212 MRF19090 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19090 Test Circuit Component Layout LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 C9 MRF19090SR3 4 RF Device Data Freescale Semiconductor 30 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 750 mA 100 kHz Tone Spacing 25 -20 -25 20 IMD -30 15 Gps 10 1900 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 -35 2020 30 -40 25 885 kHz -50 2.25 MHz 20 1.25 MHz LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 550 mA -35 -40 750 mA -45 950 mA -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 10 0 5 15 25 10 20 Pout, OUTPUT POWER (WATTS (Avg.)) -30 -40 3rd Order -50 5th Order -60 7th Order -70 Figure 6. Intermodulation Products versus Output Power -22 Pout = 90 W (PEP) IDQ = 750 mA, f = 1960 MHz 100 kHz Tone Spacing 12.5 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 100 10 Pout, OUTPUT POWER (WATTS) PEP 12.5 750 mA 11.5 550 mA 11 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 10.5 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power -80 35 VDD = 26 Vdc IDQ = 750 mA f = 1960 MHz 100 kHz Tone Spacing 1 13 10 30 -20 Figure 5. Third Order Intermodulation Distortion versus Output Power 950 mA -70 Gps 100 12 -60 Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power -20 -25 15 Figure 3. Class AB Performance versus Frequency VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 9 Channel Forward Pilot:0, Paging:1, Traffic:8-13, Sync:32 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 -15 IRL VDD = 26 Vdc, IDQ = 1.1 A, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) -24 -26 12 Gps -28 -30 11.5 IMD -32 -34 11 -36 100 10.5 22 24 26 28 30 -38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MRF19090SR3 RF Device Data Freescale Semiconductor ADJACENT CHANNEL POWER RATIO (dB) 35 -30 35 5 IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) -10 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zsource Zload f = 1930 MHz LIFETIME BUY f = 1990 MHz 1990 MHz 1930 MHz VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP) f MHz Zsource 1930 4.5 - j6.1 1.1 - j4.5 1960 4.4 - j6.0 1.1 - j4.4 1990 4.3 - j6.1 1.1 - j4.3 Zload Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Zo = 10 MRF19090SR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M B M M bbb M T A M B ccc M T A M B ccc M N R (INSULATOR) M T A M B M S (LID) aaa M T A M B (LID) M (INSULATOR) M H C F E T A A (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF19090SR3 MRF19090SR3 RF Device Data Freescale Semiconductor 7 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 8 Oct. 2008 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 * Updated Part Numbers in Figure 1, Test Circuit Schematic, to RoHS compliant part numbers, p. 3 * Added Product Documentation and Revision History, p. 8 MRF19090SR3 8 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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"Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved. MRF19090SR3 Document Number: RF Device Data MRF19090 Rev. 8, 10/2008 Freescale Semiconductor 9