Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3866AUBJ)
• JANTX level (2N3866AUBJX)
• JANTXV level (2N3866AUBJV)
• JANS level (2N3866AUBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose high frequency
• VHF-UHF amplifier transistor
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 1008
• Reference document:
MIL-PRF-19500/398
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 30
Volts
Collector-Base Voltage VCBO 60
Volts
Emitter-Base Voltage VEBO 3.5
Volts
Collector Current, Continuous IC 400
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 0.5
2.86
W
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. F 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 60
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 5 mA 30 Volts
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100 µA 3.5
Volts
Collector-Emitter Cutoff Current ICEO V
CE = 28 Volts 20 µA
Collector-Emitter Cutoff Current ICES1
ICES2
VCE = 55 Volts
VCE = 55 Volts, TA = 150°C
100
2
µA
mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
IC = 50 mA, VCE = 5 Volts
IC = 360 mA, VCE = 5 Volts
IC = 50 mA, VCE = 5 Volts
TA = -55°C
25
8
12
200
Collector-Emitter Saturation Voltage VCEsat1 I
C = 100 mA, IB = 10 mA 1 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 15 Volts, IC = 50 mA,
f = 200 MHz 4 7.5
Open Circuit Output Capacitance COBO V
CB = 28 Volts, IE = 0 mA, 3.5 pF
Collector Efficiency
η1
η2
VCC = 28 Volts, f = 400 MHz
Pin = 0.15 W
Pin = 0.075 W
45
40
%
Power Output
P1out
P1out
VCC = 28 Volts, f = 400 MHz
Pin = 0.15 W
Pin = 0.075 W
1.0
0.5
2
Watts