SFH 4211
GaAs-IR-Lumineszenzdiode in SMT-Gehäuse
GaAs Infrared Emitter in SMT Package
Lead (Pb) Free Product - RoHS Compliant
2008-08-18 1
Wesentliche Merkmale
GaAs-LED mit sehr hohem Wirkungsgrad
Gute Linearität (Ie = f [IF]) bei hohen Strömen
Gleichstrom- (mit Modulation) oder
Impulsbetrieb möglich
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Oberflächenmontage geeignet
Gegurtet lieferbar
•SFH 4211 Gehäusegleich mit SFH 320
Anwendungen
Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb, Lochstreifenleser
Industrieelektronik
„Messen/Steuern/Regeln“
Automobiltechnik
Sensorik
Alarm- und Sicherungssysteme
IR-Freiraumübertragung
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 4211
Q65110A2515
Kathodenkennzeichnung: abgesetzte Ecke
cathode marking: beveled edge
TOPLED®
Features
Very highly efficient GaAs-LED
Good Linearity (Ιe = f [IF]) at high currents
DC (with modulation) or pulsed operations are
possible
High reliability
High pulse handling capability
Suitable for surface mounting (SMT)
Available on tape and reel
•SFH 4211 same package as SFH 320
Applications
Miniature photointerrupters
Industrial electronics
For drive and control circuits
Automotive technology
Sensor technology
Alarm and safety equipment
IR free air transmission
2008-08-18 2
SFH 4211
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 + 100 °C
Sperrspannung
Reverse voltage
VR5 V
Durchlassstrom
Forward current
IF100 mA
Stoßstrom, τ = 10 µs, D = 0
Surge current
IFSM 3 A
Verlustleistung
Power dissipation
Ptot 160 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
∆λ 55 nm
Abstrahlwinkel
Half angle
ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area
A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3 mm²
SFH 4211
2008-08-18 3
Schaltzeiten, Ιe von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, RL = 50
tr, tf0.5 µs
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co25 pF
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.3 ( 1.5)
2.3 ( 2.8)
V
V
Sperrstrom
Reverse current
VR = 5 V
IR0.01 ( 1) µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe20 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV– 2 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
TCλ+ 0.3 nm/K
Strahlstärke Ie in Achsrichtung (gemessen bei einem Raumwinkel = 0.01 sr)
Radiant Intensity Ie in Axial Direction (at a solid angle of = 0.01 sr)
Bezeichnung
Parameter
Symbol Werte
Values
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
2.5
6.0
mW/sr
mw/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ. 45 mW/sr
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 4211
2008-08-18 4
Relative Spectral Emission
Irel = f (λ)
Forward Current
IF = f (VF), single pulse, tp = 20 µs
Radiation Characteristics
Srel = f (ϕ)
OHR01938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
10
OHR01554
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚
20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Radiant Intensity
Single pulse, tp = 20 µs
Max. Permissible Forward Current
IF = f (TA)
Ιe
Ιe 100 mA = f (IF)
OHR01551
10
-3
Ι
F
-2
10
10
-1
10
0
10
1
10
2
Ι
e 100 mA
e
Ι
-2
10
-1
10
0
10
1
10A
A
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
Permissible Pulse Handling
Capability IF = f (tp), duty cycle
D = parameter, TA = 20 °C
t
OHR00860
p
-5
10
10
2
Ι
F
10
3
10
4
5
DC
0.2
0.5
0.1
0.005
0.01
0.02
0.05
t
p
T
Ι
F
t
p
T
D=
5
mA
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10s
D=
SFH 4211
2008-08-18 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
A
C
OHLPY970
4.5 (0.177)
2.6 (0.102)
1.5 (0.059)
Cu-area > 16 mm
Cu-Fläche > 16 mm
2
2
Solder resist
Lötstopplack
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
2008-08-18 6
SFH 4211
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 4211
2008-08-18 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.