PFM/PWM Step-Up DC/DC Controller
FEATURES
■Space-Saving 5-Pin SOT-23A Package
■Guaranteed Start-Up at 0.9V
■50 µA (Typ) Supply Current (fOSC = 100 KHz)
■300 mA
Output Current @ VIN ≥ 2.7V
■0.5 µA Shutdown Mode
■
100 KHz and 300 KHz Switching Frequency Options
■Programmable Soft-Start
■84% Efficiency
TYPICAL APPLICATIONS
■Palmtops
■Battery Powered Systems
■Positive LCD Bias Generators
■Portable Communicators
GENERAL DESCRIPTION
The TC110 is a step-up (Boost) switching controller that
furnishes output currents as high as 300 mA while delivering
a typical efficiency of 84%. The TC110 normally operates in
pulse width modulation mode (PWM), but automatically
switches to pulse frequency modulation (PFM) at low output
loads for greater efficiency. Supply current draw for the 100
KHz version is typically only 50 µA, and is reduced to less
than 0.5 µA when the SHDN input is brought low. Regulator
operation is suspended during shutdown.
Housed in a tiny 5-pin SOT-23A package, the TC110
occupies minimum board space, and uses tiny external
components (the 300 KHz version allows for less than 5 mm
surface-mount magnetics).
The TC110 accepts input voltages from 2.0V to 10.0V,
with a guaranteed start-up voltage of 0.9V.
TC110
TC110-2 5/24/99
TYPICAL OPERATING CIRCUIT
54
TC110
13
2
3V to 5V Supply
SHDN/SS
V
DD
EXT GND
IN5817
D1
47 µF
Tantalum
Si9410DY
47 µH
10 µF
Battery
3V
VOUT
V
OUT
R
*RC Optional
C
ON
OFF
+
+
ORDERING INFORMATION
Output Osc. Operating
Part Voltage* Freq. Temp.
Number (V) Package (KHz) Range
TC110501ECT 5.0 5-Pin SOT-23A 100 –40 to +85°C
TC110331ECT 3.3 5-Pin SOT-23A 100 –40 to +85°C
TC110301ECT 3.0 5-Pin SOT-23A 100 –40 to +85°C
TC110503ECT 5.0 5-Pin SOT-23A 300 –40 to +85°C
TC110333ECT 3.3 5-Pin SOT-23A 300 –40 to +85°C
TC110303ECT 3.0 5-Pin SOT-23A 300 –40 to +85°C
NOTE: *Other output voltages available. Please contact Microchip
Technology for details.
PIN CONFIGURATION
54
5-Pin SOT-23A
TC110
13
2
© 2001 Microchip Technology Inc. DS21355A
2
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VOUT, SHDN Pins ............ –0.3V to +12V
EXT Output Current ............................................±100 mA
Voltage on EXT Pin............................–0.3V to VDD +0.3V
Power Dissipation ................................................150 mW
Operating Temperature............................–40°C to +85°C
Storage Temperature .............................–40°C to +125°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: Note 1, TA = 25°C, VIN = 0.6V X VR, VDD = VOUT, unless otherwise noted.
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage Note 2 2.0 — 10.0 V
VSTART Start-Up Supply Voltage IOUT = 1mA — — 0.9 V
VHOLD-UP Oscillator Hold-Up Voltage IOUT = 1mA — — 0.7 V
IDD
Boost Mode Supply Current
V
OUT
= SHDN = (0.95 x V
R
); f
OSC
= 300 KHz;V
R
= 3.0V
— 120 190 µA
V
R
= 3.3V
— 130 200 µA
V
R
= 5.0V
— 180 280 µA
f
OSC
= 100 KHz; V
R
= 3.0V
—50 90µA
V
R
= 3.3V
— 50 100 µA
V
R
= 5.0V
— 70 120 µA
ISTBY Standby Supply Current
V
OUT
= SHDN = (V
R
+
0.5V); f
OSC
= 300 KHz; V
R
= 3.0V
—20 34µA
V
R
= 3.3V
—20 35µA
V
R
= 5.0V
—22 38µA
f
OSC
= 100 KHz; V
R
= 3.0V
—11 20µA
V
R
= 3.3V
—11 20µA
V
R
= 5.0V
—11 22µA
ISHDN Shutdown Supply Current SHDN = GND, VO = (VR x 0.95) — 0.05 0.5 µA
fOSC Oscillator Frequency
V
OUT
= SHDN = (0.95 x V
R
);
fOSC = 300 KHz 255 300 345 KHz
fOSC = 100 KHz 85 100 115 KHz
VOUT Output Voltage Note 3 VRVRVRV
x 0.975 x 1.025
DTYMAX Maximum Duty Cycle VOUT = SHDN = 0.95 x VR — — 92 %
(PWM Mode)
DTYPFM Duty Cycle IOUT = 0 mA 15 25 35 %
(PFM Mode)
VIH SHDN Input Logic High VOUT = (VR x 0.95) 0.65 — — V
VIL SHDN Input Logic Low VOUT = (VR x 0.95) — — 0.20 V
REXTH EXT ON Resistance to VDD VOUT = SHDN = (VR x 0.95); VR = 3.0V — 32 47 Ω
VR = 3.3V — 29 43 Ω
VEXT = (VOUT – 0.4V) VR = 5.0V — 20 29 Ω
REXTL
EXT ON Resistance to GND
V
OUT
= SHDN = (V
R
x 0.95)
;
V
R
= 3.0V
—20 30 Ω
VR = 3.3V — 19 27 Ω
VEXT = 0.4V VR = 5.0V — 13 19 Ω
ηEfficiency —84 — %
Notes: 1. For VR = 3.0V, IOUT = 120mA; For VR = 3.3V, IOUT = 130mA; For VR = 5.0V IOUT = 200 mA.
2. See Application Notes “Operating Mode” description for clarification.
3. VR is the factory output voltage setting.
3
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
PIN DESCRIPTION
Pin Number Name Description
1V
OUT Power and Voltage Sense Input. This dual function input provides both feedback
voltage sensing and internal chip power. It should be connected to the regulator output.
(See
Applications
section).
2V
DD Power Supply Voltage Input.
3 SHDN/SS Shutdown Input. A logic low on this input suspends device operation and reduces
supply current to less than 0.5 µA. Device operation resumes when SHDN is brought
high. An RC circuit connected to this input also determines the soft-start time.
4 GND Ground Terminal.
5 EXT External Switch Transistor Drive Complimentary Output. This pin drives the external
switching transistor. It may be connected to the base of the external bipolar transistor or
gate of the external N-channel MOSFET. (See
Applications
section).
4
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
DETAILED DESCRIPTION
TC110 is a PFM/PWM step-up DC/DC controller for use
in systems operating from two or more cells, or in low
voltage, line-powered applications. It uses PWM as the
primary modulation scheme, but automatically converts to
PFM at output duty cycles less than approximately 10%. The
conversion to PFM provides reduced supply current, and
therefore higher operating efficiency at low loads. The
TC110 uses an external switching transistor, allowing con-
struction of switching regulators with maximum output cur-
rents of 300 mA.
The TC110 consumes only 70 µA, typical, of supply
current and can be placed in a 0.5 µA shutdown mode by
bringing SHDN low. The regulator is disabled during shut-
down, and resumes normal operation when SHDN is brought
high. Other features include start-up at VIN = 0.9V, an
externally-programmable soft start time and tiny 5-pin
SOT-23A packaging.
Operating Mode
The TC110 is powered by the voltage present on the
VDD input. The applications circuits of Figures 1a and 1b
show operation in the bootstrapped and non-bootstrapped
modes. In bootstrapped mode, the TC110 is powered from
the output (start-up voltage is supplied by VIN through the
inductor and Schottky diode while Q1 is off). In bootstrapped
mode, the switching transistor is turned on harder because
its gate voltage is higher (due to the boost action of the
regulator), resulting in higher output current capacity.
The TC110 is powered from the input supply in the non-
bootstrapped mode. In this mode, the supply current to the
TC110 is minimized. However, the drive applied to the gate
of the switching transistor swings from the input supply level
to ground, so the transistor’s ON resistance increases at low
input voltages. Overall efficiency is increased since supply
current is reduced, and less energy is consumed charging
and discharging the gate of the MOSFET. While the TC110
is guaranteed to start up at 0.9V the device performs to
specifications at 2.0V and higher.
Low Power Shutdown Mode
The TC110 enters a low power shutdown mode when
SHDN is brought low. While in shutdown, the oscillator is
disabled and the output switch (internal or external) is shut
off. Normal regulator operation resumes when SHDN is
brought high. SHDN may be tied to the input supply if not
used.
Note:
Because the TC110 uses an external diode, a
leakage path between the input voltage and the output node
(through the inductor and diode) exists while the regulator is
in shutdown. Care must be taken in system design to assure
the input supply is isolated from the load during shutdown.
Soft Start
Soft start allows the output voltage to gradually ramp
from 0V to rated output value during start-up. This action
minimizes (or eliminates) overshoot, and in general, re-
duces stress on circuit components. Figure 2 shows the
circuit required to implement soft start. Values of 470K and
0.1 µF for RSS and CSS are adequate for most applications.
Input Bypass Capacitors
Using an input bypass capacitor reduces peak current
transients drawn from the input supply, and reduces the
switching noise generated by the regulator. The source
impedance of the input supply determines the size of the
capacitor that should be used.
Output Capacitor
The effective series resistance of the output capacitor
directly affects the amplitude of the output voltage ripple.
(The product of the peak inductor current and the ESR
determines output ripple amplitude.) Therefore, a capacitor
with the lowest possible ESR should be selected. Smaller
capacitors are acceptable for light loads or in applications
where ripple is not a concern. The Sprague 595D series of
tantalum capacitors are amongst the smallest of all low ESR
surface mount capacitors available. Table 1 lists suggested
component numbers and manufacturers.
Inductor Selection
Selecting the proper inductor value is a trade-off be-
tween physical size and power conversion requirements.
Lower value inductors cost less, but result in higher ripple
current and core losses. They are also more prone to
saturate since the coil current ramps to a higher value.
Larger inductor values reduce both ripple current and core
losses, but are larger in physical size and tend to increse the
start-up time slightly.
A 22 µH inductor, therefore, is recommended for the 300
KHz versions and a 47µH inductor is recommended for the
100KHz versions. Inductors with a ferrite core (or equiva-
lent) also are recommended. For highest efficiency, use an
inductor with a series resistance less than 20mΩ.
The inductor value directly affects the output ripple
voltage. Equation 3 is derived as shown below, and can be
used to calculate an inductor value, given the required
output ripple voltage and output capacitor series resistance:
5
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
VRIPPLE ≈ ESR(di)
where ESR is the equivalent series resistance of the
output filter capacitor, and VRIPPLE is in volts.
Expressing di in terms of switch ON resistance and time:
Solving for L:
Care must be taken to ensure the inductor can handle
peak switching currents, which can be several times load
currents. Exceeding rated peak current will result in core
saturation and loss of inductance. The inductor should be
selected to withstand currents greater than IPK (Equation 10)
without saturating.
Calculating the peak inductor current is straightforward.
Inductor current consists of an AC (sawtooth) current cen-
tered on an average DC current (i.e. input current). Equation
6 calculates the average DC current. Note that minimum
input voltage and maximum load current values should be
used:
Re-writing in terms of input and output currents and
voltages:
Solving for input curent:
The sawtooth current is centered on the DC current
level; swinging equally above and below the DC current
calculated in Equation 6. The peak inductor current is the
sum of the DC current plus half the AC current. Note that
minimum input voltage should be used when calculating the
AC inductor current (Equation 9).
where: VSW = VCESAT of the switch (note if a CMOS
switch is used substitute VCESAT for RDSON x IIN)
Combining the DC current calculated in Equation 6, with
half the peak AC current calculated in Equation 9, the peak
inductor current is given by:
IPK = IIN(MAX) + 0.5(di)
Output Capacitor
The effective series resistance of the output capacitor
directly affects the amplitude of the output voltage ripple.
(The product of the peak inductor current and the ESR
determines output ripple amplitude.) Therefore, a capacitor
with the lowest possible ESR should be selected. Smaller
capacitors are acceptable for light loads or in applications
where ripple is not a concern. The Sprague 959D series of
tantalum capacitors are amongst the smallest of all low ESR
surface mount capacitors available. Table 1 lists suggested
component numbers and manufacturers.
Equation 1.
Equation 2.
Equation 3.
Equation 4.
Equation 5.
Equation 6.
Equation 7.
Equation 8.
Equation 9.
Equation 10.
VRIPPLE ≈ESR [(VIN – VSW)tON]
L
ESR [(VIN – VSW)tON]
Input Power = Output Power
Efficiency
IIN(MAX) = (VOUT(MAX))(IOUT(MAX))
(Efficiency)(VIN(MAX))
di = V(dt)
dt
V = L(di)
dt
(VIN(MIN)) (IN(MAX)) = (VOUT(MAX))(IOUT(MAX))
Efficiency
di = [(VIN(MIN) – VSW)tON]
L
L ≈VRIPPLE
6
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
Figure 1a. Bootstrapped Operation Figure 1b. Non-Bootstrapped Operation
Figure 2. Soft Start/Shutdown Circuit
54
TC110xx
13
2
V
OUT
EXT GND
D1
IN5817
C2
47 µF
L1
100 µH
V
OUT
OFF ON
n
MTP3055EL
C1
33µF
V
IN
SHDN
V
DD
54
TC110xx
13
2
V
OUT
EXT GND
D1
IN5817
C2
47 µF
L1
100 µH
V
OUT
OFF ON
n
MTP3055EL
C1
33µF
V
IN
SHDN
V
DD
TC110xx
3
SHDN/SS
C
SS
0.1 µF
SHDN
R
SS
470K V
IN
TC110xx
3
SHDN/SS
C
SS
0.1 µF
R
SS
470K
Shutdown Used
Shutdown Not Used
7
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
Board Layout Guidelines
As with all inductive switching regulators, the TC110
generates fast switching waveforms which radiate noise.
Interconnecting lead lengths should be minimized to keep
stray capacitance, trace resistance and radiated noise as
low as possible. In addition, the GND pin, input bypass
capacitor and output filter capacitor ground leads should be
connected to a single point. The input capacitor should be
placed as close to power and ground pins of the TC110 as
possible.
Output Diode
For best results, use a Schottky diode such as the
MA735, 1N5817, MBR0520L or equivalent. Connect the
diode between the FB (or SENSE) input as close to the IC
as possible. Do not use ordinary rectifier diodes since the
higher threshold voltages reduce efficiency.
External Switching Transistor Selection
The EXT output is designed to directly drive an N-
channel MOSFET or NPN bipolar transistor. N-channel
MOSFETs afford the highest efficiency because they do not
draw any gate drive current, but are typically more expen-
sive than bipolar transistors. If using an N-Channel MOSFET,
the gate should be connected directly to the EXT output as
shown in Figure 1. EXT is a complimentary output with a
maximum ON resistances of 43Ω to VDD when high and 27Ω
to ground when low. Peak currents should be kept below
10 mA.
When selecting an N-channel MOSFET, there are three
important parameters to consider: total gate charge (Qg);
ON resistance (rDS(on)) and reverse transfer capacitance
(CRSS). Qg is a measure of the total gate capacitance that
will ultimately load the EXT output. Too high a Qg can reduce
the slew rate of the EXT output sufficiently to grossly lower
operating efficiency. Transistors with typical Qg data sheet
values of 50 nC or less can be used. For example, the
Si9410DY has a Qg(typ) of 17nC @ VGS = 5V. This equates
to a gate current of:
IGATE(max) = fMAX x Qg = 115 KHZ x 17 nC = 2 mA
The two most significant losses in the N-Channel
MOSFET are switching loss and I2R loss. To minimize
these, a transistor with low rDS(on) and low CRSS should
be used.
Bipolar NPN transistors can be used, but care must be
taken when determining base current drive. Too little current
will not fully turn the transistor on, and result in unstable
regulator operation and low efficiency. Too high a base drive
causes excessive power dissipation in the transistor and
increase switching time due to over-saturation. For peak
efficiency, make RB as large as possible, but still guarantee-
ing the switching transistor is completely saturated when the
minimum value of hFE is used.
APPLICATIONS
Circuit Design
Figure 3 shows a TC110 operating as a 100 KHz
bootstrapped regulator with soft start. This circuit uses an
NPN switching transistor (Zetex FZT690B) that has an hFE
of 400 and VCESAT of 100 mV at IC = 1A. Other high beta
transistors can be used, but the values of RB and CB may
need adjustment if hFE is significantly different from that of
the FZT690B.
Figure 4 and 5 both utilize an N-Channel switching
transistor (Silconix Si9410DY). This transistor is a member
of the LittlefootTM family of small outline MOSFETs. The
circuit of Figure 4 operates in bootstrapped mode, while the
circuit of Figure 5 operates in non-bootstrapped mode.
8
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
Figure 3. 100 KHz Bootstrapped Regulator with Soft Start
Using a Bipolar Transistor Figure 4. 300 KHz Bootstrapped, N-Channel Transistor
Figure 5. 300 KHz Non-Bootstrapped, N-Channel Transistor
VIN
CIN
10µF/16V
EXT GND
TC110301
VOUT VDD SHDN/SS
VOUT
D1
Matsushita
MA737
12 3
4
5
Q1
FZT690BCT
RB
1K
CB
10nF
Ceramic
L1
47µH
Sumida CD75
COUT
47µF, 10V
Tant.
CSS
0.1µF
Ceramic RSS
470K
SHUTDOWN
(Optional)
EXT GND
TC110303
V
OUT
V
DD
SHDN/SS
V
OUT
D1
Motorola
MBR0520L
12 3
4
5
C
IN
10uF/16V
V
IN
Q1
Silconix
Si9410DY
L1
22uH
Sumida
CD54
C
OUT
47uF/16V
Tant.
EXT GND
TC110303
V
OUT
V
DD
SHDN/SS
V
OUT
D1
Motorola
MBR0520L
12 3
4
5
C
IN
10uF/16V
V
IN
Q1
Silconix
Si9410DY
L1
22uH
Sumida
CD54
C
OUT
47uF/16V
Tant.
9
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
TC110 DEMO CARD
The TC110DEMO allows the user to quickly prototype
TC110-based circuits. The TC110DEMO consists of a printed
circuit board (with TC110 installed on the foil side of the
board); with separate Schottky diode, output capacitor and
100 µH Coiltronics inductor. The circuit schematic appears
in Figure 7.
The board is designed to accept either a 100 µH or 20
µH torroidal inductor. The remaining components install in
Figure 6. TC110 Demo Board Layout
Figure 7. TC110 Demo Schematic
accordance with the component side layout diagram of
Figure 6. Jumper blocks J1 and J2 control shutdown and
operating mode selection respectively. Shorting J1, terminal
X to OFF, places the TC110 in shutdown; normal operation
is enabled when J1 terminal X is shorted to ON. Shorting J2,
terminal Y to BS, selects bootstrapped operating mode;
shorting J2 terminal Y to NB, selects non-bootstrapped
operation.
TC110-0
Component Side of Board
V
OUT
GND
V
IN
C
OUT
C
IN
TC110-0
TC110
L1
J2
BS Y NB
OFF X ON
J1
Q1 R1
S
(E) D
(C)
G, (B)
Full Size
L1
COUT
EXT GND
VOUT VDD SHDN
TC110
VOUT
D1
12 3
4
5
NB Y BS
J2
Bootstrap/
Non-Bootstrap ON X OFF
J1
Shutdown Control
CIN
VIN
R1 Q1
n
D, (C)
S, (E)
G, (B)
10
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
Table 1. Suggested Components and Manufacturers
Type Inductors Capacitors Transistors Diodes
Surface Mount Sumida Matsuo N-channel Nihon
CD54 Series (300 KHz) 267 Series Silconix EC10 Series
CD75 (100 KHz) Si9410DY
Sprague Matshushita
Coiltronics 595D Series Motorola MA735 Series
CTX Series MTP3055EL
Nichicon MTD20N03
F93 Series
Through Hole Sumida Sanyo NPN Motorola
RCH855 Series OS-CON Series Zetex 1N5817 – 1N5822
RCH110 Series ZTX694B
Nichicon
Renco PL Series
RL1284-12
MARKINGS
5-Pin SOT-23A
represents product classification; TC110 = M
represents 1st integer of voltage and frequency
Symbol
100KHz 300KHz Output Voltage
B1 1.
C2 2.
D3 3.
E4 4.
F5 5.
H6 6.
represents 1st decimal of voltage and frequency
Symbol
100KHz 300KHz Output Voltage
0A .0
1B .1
2C .2
3D .3
4E .4
5F .5
6H .6
7K .7
8L .8
9M .9
represents lot ID number
11
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
TAPING FORMS
User Direction of Feed User Direction of Feed
Device
Marking
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Device
Marking
PIN 1
PIN 1
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Reverse Reel Component Orientation
RT Suffix Device
(Mark Upside Down)
W
P
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in
Carrier Tape, Number of Components Per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7
TYPICAL CHARACTERISTICS CURVES
TC110 (300KHz, 3.3V)
OUTPUT CURRENT (IOUT) (mA)
3.00.1 1 10 100 1000
3.1
3.2
3.3
3.4
3.5
OUTPUT VOLTAGE (VOUT) (V)
L = 22µH, CL = 94 µF (Tantalum)
VIN = 0.9V
1.2V 1.8V
1.5V 2.0V 2.7V
OUTPUT VOLTAGE vs. OUTPUT CURRENT
TC110 (300KHz, 3.3V)
OUTPUT CURRENT (IOUT) (mA)
00.1 1 10 100 1000
20
40
60
80
100
EFFICIENCY (%)
L = 22µH, CL = 94 µF (Tantalum)
VIN = 0.9V
1.2V
1.8V
1.5V
2.0V
2.7V
EFFICIENCY vs. OUTPUT CURRENT
12
PFM/PWM Step-Up DC/DC Controller
TC110
TC110-2 5/24/99 2001 Microchip Technology Inc. DS21355A
PACKAGE DIMENSIONS
Dimensions: inches (mm)
5-Pin SOT-23A (EIAJ SC-74A)
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.075 (1.90)
REF.
.020 (0.50)
.012 (0.30)
PIN 1 .037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00) .024 (0.60)
.004 (0.10)
10° MAX. .010 (0.25)
.004 (0.09)
13
TC110
PFM/PWM Step-Up DC/DC Controller
TC110-2 5/24/99
2001 Microchip Technology Inc. DS21355A
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reserved. All other trademarks mentioned herein are the property of their respective companies.
All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper.
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Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-6 40- 003 4 Fax: 770- 640 -03 07
Austin
Analog Product Sales
8303 MoPac Expressway North
Suite A-201
Austin, TX 78759
Tel: 512-3 45- 203 0 Fax: 512- 345 -60 85
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-6 92- 384 8 Fax: 978- 692 -38 21
Boston
Analog Product Sales
Unit A-8-1 Millbrook Tarry Condominium
97 Lowell Road
Concord, MA 01742
Tel: 978-3 71- 640 0 Fax: 978- 371 -00 50
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-2 85- 0071 Fax: 630-2 85 -00 75
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 7500 1
Tel: 972-8 18- 742 3 Fax: 972- 818 -29 24
Dayton
Two Pres tige Pla c e, Sui te 130
Miamisburg, OH 45342
Tel: 937-2 91- 165 4 Fax: 937- 291 -91 75
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-5 38- 2250 Fax: 248-5 38 -22 60
Los A ngeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-2 63- 188 8 Fax: 949- 263 -13 38
Mountain View
Analog Product Sales
1300 Terra Bella Avenue
Mountain View, CA 94043-183 6
Tel: 650-9 68- 924 1 Fax: 650- 967 -15 90
New York
150 Motor Parkway, Suite 202
Hauppauge , NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississ auga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
China - Beijing
Microchip Technology Beijing Office
Unit 915
New China Hong Kong Manhattan Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Shanghai
Microchip Technology Shanghai Office
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Hong Kong
Microchip Asia Pacific
RM 2101, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaiso n Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, OíShaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Intl. Inc.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku -K u, Yokoha ma -shi
Kanaga wa, 222-0 033 , Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea
Tel: 82-2-554-7200 Fax: 82-2-558-5934
ASIA/PACIFIC (continued)
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-334-8870 Fax: 65-334-8850
Taiwan
Microc hip Tech nol o gy Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Australia
Microchip Technology Austra lia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Denmark
Microchip Technology Denmark ApS
Regus Business Centre
Lautrup hoj 1-3
Bal lerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Arizona Microchip Technology SARL
Parc díActivite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90 -79
Germany
Arizona Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Germany
Analog Product Sales
Lochhamer Strasse 13
D-82152 Martinsried, Germany
Tel: 49-89-895650-0 Fax: 49-89-895650-22
Italy
Arizona Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berksh ire, Engla nd RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
01/09/01
WORLDWIDE SALES AND SERVICE
