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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 1
HMC617LP3 / 617LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
v02.0610
General Description
Features
Functional Diagram
The HMC617LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 550 and 1200 MHz. The amplier
has been optimized to provide 0.5 dB noise gure,
16 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC617LP3(E) shares the same package and
pinout with the HMC618LP3(E) 1.7 - 2.2 GHz LNA.
The HMC617LP3(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC617LP3(E) offers improved noise gure versus
the previously released HMC372LP3(E) and the
HMC376LP3(E).
Noise Figure: 0.5 dB
Gain: 16 dB
Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
Typical Applications
The HMC617LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Electrical Specications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter Vdd = +3 Vdc Vdd = +5 Vdc Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range 698 - 960 550 - 1200 698 - 960 550 - 1200 MHz
Gain 13 16 11 15 13.5 16 11.5 16 dB
Gain Variation Over Temperature 0.003 0.003 0.005 0.005 dB/ °C
Noise Figure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 dB
Input Return Loss 28 22 22 17 dB
Output Return Loss 12 14 12 15 dB
Output Power for 1 dB
Compression (P1dB) 14 16 12.5 16 18.5 21 16.5 20 dBm
Saturated Output Power (Psat) 17 16.5 21 20.5 dBm
Output Third Order Intercept (IP3) 31 30 37 37 dBm
Supply Current (Idd) 30 45 30 45 88 115 88 115 mA
* Rbias resistor sets current, see application circuit herein
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 2
Input Return Loss vs. Temperature [1]
Output Return Loss vs. Temperature [1]
Broadband Gain & Return Loss [1] [2]
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Vdd=5V
Vdd=3V
RESPONSE (dB)
FREQUENCY (GHz)
S21
S22
S11
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
Gain vs. Temperature [2]
10
12
14
16
18
20
22
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
Gain vs. Temperature [1]
10
12
14
16
18
20
22
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25C
+85C
- 40C
GAIN (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
-30
-25
-20
-15
-10
-5
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 3
P1dB vs. Temperature [1] [2]
Psat vs. Temperature [1] [2]
10
12
14
16
18
20
22
24
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
10
12
14
16
18
20
22
24
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
Vdd=3V
Vdd=5V
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Output IP3 and Idd vs.
Supply Voltage @ 700 MHz [3]
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
[3] Rbias = 3.92K [4] Measurement reference plane shown on evaluation PCB drawing.
Output IP3 vs. Temperature [1] [2]
24
28
32
36
40
44
48
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
+25 C
+85 C
- 40 C
IP3 (dBm)
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
Noise Figure vs. Temperature [1] [2] [4]
0
0.2
0.4
0.6
0.8
1
1.2
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
Vdd=5V
Vdd=3V
NOISE FIGURE (dB)
FREQUENCY (GHz)
+85C
+25 C
-40C
Output IP3 and Idd vs.
Supply Voltage @ 900 MHz [3]
26
28
30
32
34
36
38
40
0
20
40
60
80
100
120
140
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IP3 (dBm)
Idd (mA)
VOLTAGE SUPPLY (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 4
Power Compression @ 900 MHz [1]
-10
0
10
20
30
40
50
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
-10
0
10
20
30
40
50
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 900 MHz [2]
Power Compression @ 700 MHz [1]
-10
0
10
20
30
40
50
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
0
10
20
30
40
50
-18 -16 -14 -12 -10 -8 -6 -4 -2 0
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 700 MHz [2]
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K
Gain, Power & Noise Figure
vs. Supply Voltage @ 700 MHz [3]
16
20
24
0
0.2
0.4
0.6
0.8
1
1.2
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
Gain, Power & Noise Figure
vs. Supply Voltage @ 900 MHz [3]
14
16
18
20
22
24
0
0.2
0.4
0.6
0.8
1
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
GAIN
P1dB
Noise Figure
GAIN (dB) & P1dB (dBm)
NOISE FIGURE (dB)
SUPPLY VOLTAGE (V)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 5
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Output IP3 vs. Rbias @ 900 MHz
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd=3V
Vdd=5V
IP3 (dBm)
Rbias (Ohms)
500
12
13
14
15
16
17
0
0.2
0.4
0.6
0.8
1
1000 10000
Vdd=5V
Vdd=3V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
500
Gain, Noise Figure & Rbias @ 900 MHz
Output IP3 vs. Rbias @ 700 MHz
22
24
26
28
30
32
34
36
38
40
1000 10000
Vdd=3V
Vdd=5V
IP3 (dBm)
Rbias (Ohms)
500
13
14
15
16
17
18
19
0
0.2
0.4
0.6
0.8
1
1.2
1000 10000
Vdd=5V
Vdd=3V
GAIN (dB)
NOISE FIGURE (dB)
Rbias(Ohms)
500
Gain, Noise Figure & Rbias @ 700 MHz
Vdd (V) Rbias Idd (mA)
Min Max Recommended
3V 1K [1] Open Circuit
2.7k 24
3.92k 30
4.7k 33
10k 40
5V 0 Open Circuit
820 65
2k 78
3.92k 88
10k 90
[1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended.
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 6
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6V
RF Input Power (RFIN)
(Vdd = +5 Vdc) +10 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 8.33 mW/°C above 85 °C) 0.54 W
Thermal Resistance
(channel to ground paddle) 120 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
2.7 18
3.0 30
3.3 41
4.5 77
5.0 88
5.5 97
Note: Amplier will operate over full voltage ranges shown above.
Typical Supply
Current vs. Vdd (Rbias = 3.92k)
HMC617LP3 / 617LP3E
v00.0807
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC617LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 617
XXXX
HMC617LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 617
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 7
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Pin Number Function Description Interface Schematic
1, 3 - 5, 7, 9,
10, 12 - 14, 16 N/C No connection required. These pins may be connected to RF/
DC ground without affecting performance.
2 RFIN This pin is matched to 50 Ohms.
6 GND This pin and ground paddle must
be connected to RF./DC ground.
11 RFOUT This pin is matched to 50 Ohms.
8 RES This pin is used to set the DC current of the amplier by
selection of external bias resistor. See application circuit.
15 Vdd Power Supply Voltage. Choke inductor and bypass capacitors
are required. See application circuit.
Pin Descriptions
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
7
7 - 8
HMC617LP3 / 617LP3E
v02.0610
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 0.55 - 1.2 GHz
Evaluation PCB
Item Description
J1, J2 PCB Mount SMA RF Connector
J3, J4 DC Pin
C1 10nF Capacitor, 0402 Pkg.
C2 1000 pF Capacitor, 0603 Pkg.
C3 0.47µF Capacitor, 0603 Pkg.
L1 18 nH, Inductor, 0603 Pkg.
L2 15 nH, Inductor, 0402 Pkg.
R1 3.92K Ohm Resistor, 0402 Pkg.
U1 HMC617LP3(E) Amplier
PCB [2] 112580 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
List of Materials for Evaluation PCB 118357 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
