© 2009 IXYS CORPORATION, All Rights Reserved
G = Gate D = Drain
S = Source TAB = Drain
Trench Gate
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 150V
ID25 = 102A
RDS(on) ≤≤
≤≤
≤ 18mΩΩ
ΩΩ
Ω
DS99661C(04/09)
IXTA102N15T
IXTH102N15T
IXTP102N15T
IXTQ102N15T
TO-263 (IXTA) TO-220 (IXTP)
D(TAB)
G
S
TO-3P (IXTQ)
GDS
TO-247 (IXTH)
GS
(TAB)
GDS(TAB)
(TAB)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C RGS = 1MΩ150 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 102 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IATC= 25°C51A
EAS TC= 25°C 750 mJ
dV/dt IS ≤ IDM, VDD ≤ VDSS ,T
J ≤ 175°C 10 V/ns
PDTC= 25°C 455 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-220, TO-3P, TO-247) 1.13 / 10 Nmlb.in.
FCMounting Force (TO-263) 10..65/2.2..14.6 N/lb.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 150 V
VGS(th) VDS = VGS, ID = 1mA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 5 μA
TJ = 150°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 18 mΩ
Features
zInternational Standard Packages
z Avalanche Rated
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 50 80 S
Ciss 5220 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 685 pF
Crss 95 pF
td(on) 20 ns
tr 14 ns
td(off) 25 ns
tf 22 ns
Qg(on) 87 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 25A 23 nC
Qgd 31 nC
RthJC 0.33 °C/W
RthCH (TO-220) 0.50 °C/W
(TO-3P & TO-247) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 102 A
ISM Repetitive, Pulse Width Limited by TJM 400 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 97 ns
IRM 8.4 A
QRM 409 nC
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 51A, -di/dt = 100A/μs
VR = 75V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
TO-3P (IXTQ) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXTP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
e
∅ P
1 2 3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 1. Output Characteristics
@ 25º C
0
10
20
30
40
50
60
70
80
90
100
110
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
0.00.40.81.21.62.02.42.83.23.64.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7
V
5
V
6
V
Fig. 4. R
DS(on)
Normalized to I
D
= 51A Val u e
vs. Ju nctio n Temper ature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 102A
I
D
= 51A
Fig. 5. R
DS(on)
Normalized to I
D
= 51A Value
vs. Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 40 80 120 160 200 240 280
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 7. Input Adm i ttance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
275
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate C h arg e
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 51A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. F o r war d -B i as Safe Op er atin g Area
0.1
1.0
10.0
100.0
1000.0
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
R
DS(on)
Limit
25µs
100µs
1ms
10ms
100ms
DC
IXYS REF: F_102N15T(6E)90-30-08
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fi g. 14. R esi stive Tu rn -o n
Ri se Time vs. Dr ai n C u rr en t
12
13
14
15
16
17
18
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 15. R esi stive Tu rn -o n
Switc h i n g Ti mes vs. Gate Re si stance
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
12
14
16
18
20
22
24
26
28
30
32
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V I
D
= 102A
I
D
= 51A
Fig. 16. Resistive Turn-off
Switching T imes vs. Junction Temperature
20
21
22
23
24
25
26
27
28
29
30
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
22
24
26
28
30
32
34
36
38
40
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
I
D
= 51A
I
D
= 102A
Fi g. 17. R esi stive Tu rn -o ff
Switching T imes vs. Drain Current
20
21
22
23
24
25
26
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
f
- Nanoseconds
18
22
26
30
34
38
42
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 13. R esi stive Tu rn -o n
Ri se Time vs. Ju n ct i o n Temp er ature
10
11
12
13
14
15
16
17
18
19
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 75V
I
D
= 102A
I
D
= 51A
Fi g . 18. Resi st i ve Tu r n-of f
Switchi n g Times vs. Gate Resistance
0
40
80
120
160
200
240
280
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
20
40
60
80
100
120
140
160
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 51A
I
D
= 102A
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_102N15T(6E)90-30-08
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fi g . 19. Maximu m Tr ansien t Th er mal I mped an ce
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
