DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 512Mb C-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. 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Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Table of Contents 1.0 Key Features ...............................................................................................................................4 2.0 Ordering Information ...................................................................................................................4 3.0 Operating Frequencies................................................................................................................4 4.0 Pin Description ...........................................................................................................................5 5.0 Package Physical Dimension ....................................................................................................6 6.0 Block Diagram (32Mbit x4 / 16Mbit x8 / 8Mbit x16 I/O x4 Banks).............................................7 7.0 Input/Output Function Description ............................................................................................8 8.0 Command Truth Table.................................................................................................................9 9.0 General Description...................................................................................................................10 10.0 Absolute Maximum Rating .....................................................................................................10 11.0 DC Operating Conditions ........................................................................................................10 12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11 13.0 Input/Output Capacitance ......................................................................................................11 14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12 15.0 DDR SDRAM IDD spec table ..................................................................................................13 16.0 AC Operating Conditions .......................................................................................................14 17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14 18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15 19.0 AC Timming Parameters & Specifications ...........................................................................16 20.0 System Characteristics for DDR SDRAM ..............................................................................17 21.0 Component Notes ....................................................................................................................18 22.0 System Notes ..........................................................................................................................20 23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21 Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Revision History Revision Month Year History 0.0 October 2004 - First version for internal review 1.0 February 2005 - Release the Rev. 1.0 spec 1.1 June 2005 - Changed master format. Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 1.0 Key Features * VDD : 2.5V 0.2V, VDDQ : 2.5V 0.2V for DDR333 * VDD : 2.6V 0.1V, VDDQ : 2.6V 0.1V for DDR400 * Double-data-rate architecture; two data transfers per clock cycle * Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transition with CK transition * MRS cycle with address key programs -. Read latency : DDR333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * LDM,UDM for write masking only (x16) * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 60Ball FBGA Pb-Free package * RoHS compliant 2.0 Ordering Information Part No. K4H510438C-ZC/LCC K4H510438C-ZC/LB3 K4H510838C-ZC/LCC K4H510838C-ZC/LB3 K4H511638C-ZC/LCC K4H511638C-ZC/LB3 Org. 128M x 4 64M x 8 32M x 16 Max Freq. CC(DDR400@CL=3) B3(DDR333@CL=2.5) CC(DDR400@CL=3) B3(DDR333@CL=2.5) CC(DDR400@CL=3) B3(DDR333@CL=2.5) Interface Package SSTL2 60ball FBGA SSTL2 60ball FBGA SSTL2 60ball FBGA 3.0 Operating Frequencies CC(DDR400@CL=3) B3(DDR333@CL=2.5) Speed @CL2 - 133MHz Speed @CL2.5 166MHz 166MHz Speed @CL3 200MHz - CL-tRCD-tRP 3-3-3 2.5-3-3 Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 4.0 Ball Description (Bottom View) 128M x 4 1 VSSQ NC NC NC NC VREF 2 NC VDDQ VSSQ VDDQ VSSQ VSS CK A12 A11 A8 A6 A4 3 VSS DQ3 NC DQ2 DQS DM CK CKE A9 A7 A5 VSS A B C D E F G H J K L M 7 VDD DQ0 NC DQ1 NC NC WE RAS BA1 A0 A2 VDD 8 NC VSSQ VDDQ VSSQ VDDQ VDD CAS CS BA0 A10/AP A1 A3 9 VDDQ NC NC NC NC NC 64M x 8 1 VSSQ NC NC NC NC VREF 2 DQ7 VDDQ VSSQ VDDQ VSSQ VSS CK A12 A11 A8 A6 A4 3 VSS DQ6 DQ5 DQ4 DQS DM CK CKE A9 A7 A5 VSS A B C D E F G H J K L M 7 VDD DQ1 DQ2 DQ3 NC NC WE RAS BA1 A0 A2 VDD 8 DQ0 VSSQ VDDQ VSSQ VDDQ VDD CAS CS BA0 A10/AP A1 A3 9 VDDQ NC NC NC NC NC 32M x 16 1 VSSQ DQ14 DQ12 DQ10 DQ8 VREF 2 DQ15 VDDQ VSSQ VDDQ VSSQ VSS CK A12 A11 A8 A6 A4 3 VSS DQ13 DQ11 DQ9 UDQS UDM CK CKE A9 A7 A5 VSS A B C D E F G H J K L M 7 VDD DQ2 DQ4 DQ6 LDQS LDM WE RAS BA1 A0 A2 VDD 8 DQ0 VSSQ VDDQ VSSQ VDDQ VDD CAS CS BA0 A10/AP A1 A3 9 VDDQ DQ1 DQ3 DQ5 DQ7 NC Organization Row Address Column Address 128Mx4 A0~A12 A0-A9, A11, A12 64Mx8 A0~A12 A0-A9, A11 32Mx16 A0~A12 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 1.00MAX 5.0 Package Physical Dimension 10.00 0.10 0.45 0.05 12.00 0.10 12.00 0.10 #A1 1.20 MAX Top view 10.00 0.10 A 0.80 x8 = 6.40 0.80 x4 = 3.20 WINDOW MOLD AREA #A1 MARK(option) 0.80 x2= 1.60 0.80 x2 = 1.60 B 9 8 7 6 5 4 3 2 1 0.80 A 0.50 H J 12.00 0.10 F G 1.00 x11 11.00 E 0.50 1.00 D 5.50 B (Datum B) C K L M 60-0.45 0.05 0.20 M A B (0.90) (0.90) (1.80) (Datum A) 4-CORNER MARK(option) Bottom view 60Ball FBGA 512Mb Package Dimension Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 6.0 Block Diagram (32Mb x 4 / 16Mb x 8 / 8Mb x 16 I/O x4 Banks) CK, CK LWE I/O Control x4/8/16 Data Input Register LDM (x4x8) LUDM (x16) Serial to parallel Bank Select x8/16/32 16Mx8/ 8Mx16/ 4Mx32 x4/8/16 x4/8/16 DQi 16Mx8/ 8Mx16/ 4Mx32 Column Decoder Col. Buffer LCBR LRAS Latency & Burst Length Programming Register LRAS LCBR LWCBR Timing Register CK, CK CKE CS RAS CAS WE Data Strobe LDM (x4x8) LUDM (x16) LWE LCAS Strobe Gen. DLL LCKE Output Buffer x8/16/32 2-bit prefetch 16Mx8/ 8Mx16/ 4Mx32 Sense AMP Row Decoder Refresh Counter Row Buffer ADD Address Register CK, CK 16Mx8/ 8Mx16/ 4Mx32 CK, CK DM Input Register LDM (x4x8) LUDM (x16) Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 7.0 Input/Output Function Description SYMBOL TYPE DESCRIPTION CK, CK Input Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to both edges of CK. Internal clock signals are derived from CK/CK. CKE Input Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE Low provides PRECHARGE POWERDOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any bank). CKE is synchronous for POWER-DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughput READ and WRITE accesses. Input buffers, excluding CK, CK and CKE are disabled during POWER-DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS Low level after Vdd is applied upon 1st power up, After VREF has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper SELF-REFRESH entry and exit, VREF must be maintained to this input. CS Input Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command decoder. All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered. LDM,(UDM) Input Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0~D7 ; UDM corresponds to the data on DQ8~DQ15. DM may be driven high, low, or floating during READs. BA0, BA1 Input Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied. A [0 : 12] Input Address Inputs : Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). DQ I/O Data Input/Output : Data bus LDQS,(U)DQS I/O Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0~D7 ; UDQS corresponds to the data on DQ8~DQ15 NC - VDDQ Supply DQ Power Supply : +2.5V 0.2V. (+2.6V 0.1V for DDR400) VSSQ Supply DQ Ground. VDD Supply Power Supply : +2.5V 0.2V. (+2.6V 0.1V for DDR400) VSS Supply Ground. VREF Input No Connect : No internal electrical connection is present. SSTL_2 reference voltage. Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 8.0 Command Truth Table COMMAND (V=Valid, X=Dont Care, H=Logic High, L=Logic Low) CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9, A11 ~ A12 Note Register Extended MRS H X L L L L OP CODE 1, 2 Register Mode Register Set H X L L L L OP CODE 1, 2 L L L H X Auto Refresh Refresh Self Refresh Entry Exit H H L L H H H H X X X X L L H H V X L H L H V L H Bank Active & Row Addr. H Read & Column Address Auto Precharge Disable H Write & Column Address Auto Precharge Disable Auto Precharge Enable H X L H L L H X L H H L H X L L H L Entry H L H X X X L V V V Exit L H Auto Precharge Enable Burst Stop Precharge Bank Selection All Banks Active Power Down Entry H L Precharge Power Down Mode Exit L DM(UDM/LDM for x16 only) H No operation (NOP) : Not defined H H X X X X H X X X L H H H H X X X L V V V X X X X X L H H H 3 3 X V 3 Row Address L Column Address H L Column Address H X V L X H 4 4 4 4, 6 7 X 5 X X X H 3 X 8 9 9 Note : 1. OP Code : Operand Code. A0 ~ A13& BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges (Write UDM/LDM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM. Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM 9.0 General Description The K4H510438C / K4H510838C / K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. 10.0 Absolute Maximum Rating Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 C Power dissipation PD 1.5 W Short circuit current IOS 50 mA Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. 11.0 DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70C) Parameter Symbol Min Max Unit Note Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDD 2.3 2.7 Supply voltage(for device with a nominal VDD of 2.6V for DDR400) VDD 2.5 2.7 I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) VDDQ 2.3 2.7 I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR400) VDDQ 2.5 2.7 I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1 I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V 2 Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V Input logic low voltage VIL(DC) -0.3 VREF-0.15 V V Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3 V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4 II -2 2 uA 5 Input leakage current Output leakage current IOZ -5 Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA uA Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9 mA Note : 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0. Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 12.0 DDR SDRAM Spec Items & Test Conditions Conditions Symbol Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ,DM and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. IDD0 Operating current - One bank operation ; One bank open, BL=4, Reads - Refer to the following page for detailed test condition IDD1 Precharge power-down standby current; All banks idle; power - down mode; CKE = <VIL(max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Vin = Vref for DQ,DQS and DM. IDD2P Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs changing once per clock cycle; Vin = Vref for DQ,DQS and DM IDD2F Precharge Quiet standby current; CS# > = VIH(min); All banks idle; CKE > = VIH(min); tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Address and other control inputs stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM IDD2Q Active power - down standby current ; one bank active; power-down mode; CKE=< VIL (max); tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; Vin = Vref for DQ,DQS and DM IDD3P Active standby current; CS# >= VIH(min); CKE>=VIH(min); one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200,tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400; DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle IDD3N Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), tCK=6ns for DDR333, CL=3 at tCK=5ns for DDR400; 50% of data changing on every transfer; lout = 0 m A IDD4R Operating current - burst write; Burst length = 2; writes; continuous burst; One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333, 5ns for DDR400; DQ, DM and DQS inputs changing twice per clock cycle, 50% of input data changing at every burst IDD4W Auto refresh current; tRC = tRFC(min) which is 12*tCK for DDR200 at tCK=10ns; 16*tCK for DDR266 at tCK=7.5ns; 20*tCK for DDR333 at tCK=6ns, 24*tCK for DDR400 at tCK=5ns; distributed refresh IDD5 Self refresh current; CKE =< 0.2V; External clock on; tCK=10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333, 5ns for DDR400. IDD6 Operating current - Four bank operation ; Four bank interleaving with BL=4 -Refer to the following page for detailed test condition IDD7A 13.0 Input/Output Capacitance Parameter ( TA= 25C, f=100MHz) Symbol Min Max DeltaCap(max) Unit Note Input capacitance (A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE) CIN1 1.5 2.5 0.5 pF 4 Input capacitance( CK, CK ) CIN2 1.5 2.5 0.25 pF 4 Data & DQS input/output capacitance COUT 3.5 4.5 pF 1,2,3,4 Input capacitance(DM for x4/8, UDM/LDM for x16) CIN3 3.5 4.5 pF 1,2,3,4 0.5 Note : 1.These values are guaranteed by design and are tested on a sample basis only. 2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is required to match signal propagation times of DQ, DQS, and DM in the system. 3. Unused pins are tied to ground. 4. This parameteer is sampled. For DDR266 and DDR333 VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V. For DDR400, VDDQ = +2.6V +0.1V, VDD = +2.6V +0.1V. For all devices, f=100MHz, tA=25C, Vout(dc) = VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level). Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A IDD1 : Operating current: One bank operation 1. Typical Case: Fro DDR200,266,333: Vdd = 2.5V, T=25'C; For DDR400: Vdd=2.6V,T=25'C Worst Case : Vdd = 2.7V, T= 10'c 2. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. lout = 0mA 3. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - CC(200Mhz,CL = 3) : tCK = 5ns, CL = 3, BL = 4, tRCD = 3*tCK , tRC = 11*tCK, tRAS = 8*tCK Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing *50% of data changing at every transfer Legend : A=Activate, R=Read, W=Write, P=Precharge, N=DESELECT IDD7A : Operating current: Four bank operation 1. Typical Case: Fro DDR200,266,333: Vdd = 2.5V, T=25'C; For DDR400: Vdd=2.6V,T=25'C Worst Case : Vdd = 2.7V, T= 10' C 2. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not changing. lout = 0mA 4. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - CC(200Mhz,CL = 3) : tCK = 5ns, CL = 3, BL = 4, tRCD = 3*tCK , tRC = 11*tCK, tRAS = 8*tCK Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing *50% of data changing at every transfer Legend : A=Activate, R=Read, W=Write, P=Precharge, N=DESELECT Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 15.0 DDR SDRAM IDD spec table Symbol IDD6 Unit Notes B3(DDR333@CL=2.5) IDD0 120 105 mA IDD1 150 135 mA mA IDD2P 5 5 IDD2F 30 30 mA IDD2Q 25 25 mA IDD3P 45 30 mA IDD3N 60 45 mA IDD4R 155 140 mA IDD4W 175 150 mA IDD5 220 205 mA Normal 5 5 mA Low power 3 3 mA 385 360 mA Symbol 64Mx8 (K4H510838C) B3(DDR333@CL=2.5) IDD0 120 105 mA IDD1 150 135 mA IDD2P 5 5 mA IDD2F 30 30 mA IDD2Q 25 25 mA IDD3P 45 30 mA IDD3N 60 45 mA IDD4R 155 140 mA IDD4W 175 150 mA IDD5 220 205 mA 5 5 mA Normal Low power Symbol 3 3 mA 385 360 mA 32Mx16 (K4H511638C) B3(DDR333@CL=2.5) IDD0 120 105 mA IDD1 160 140 mA IDD2P 5 5 mA IDD2F 30 30 mA IDD2Q 25 25 mA IDD3P 45 30 mA IDD3N 60 45 mA IDD4R 190 170 mA IDD4W 215 185 mA IDD5 220 205 mA 5 5 mA Low power IDD7A Optional Unit Notes CC(DDR400@CL=3) Normal Optional Unit Notes CC(DDR400@CL=3) IDD7A IDD6 128Mx4 (K4H510438C) CC(DDR400@CL=3) IDD7A IDD6 (VDD=2.7V, T = 10C) 3 3 mA 400 380 mA Optional Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 16.0 AC Operating Conditions Parameter/Condition Symbol Min Max Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 V VREF - 0.31 V Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same. 17.0 AC Overshoot/Undershoot specification for Address and Control Pins Specification Parameter DDR400 DDR333 DDR200/266 Maximum peak amplitude allowed for overshoot TBD TBD 1.5 V Maximum peak amplitude allowed for undershoot TBD TBD 1.5 V The area between the overshoot signal and VDD must be less than or equal to TBD TBD 4.5 V-ns The area between the undershoot signal and GND must be less than or equal to TBD TBD 4.5 V-ns VDD Overshoot 5 Maximum Amplitude = 1.5V 4 3 Volts (V) 2 Area = 4.5V-ns 1 0 -1 -2 -3 Maximum Amplitude = 1.5V GND -4 -5 0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0 0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5 Tims(ns) undershoot AC overshoot/Undershoot Definition Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins Specification Parameter DDR400 DDR333 DDR200/266 Maximum peak amplitude allowed for overshoot TBD TBD 1.2 V Maximum peak amplitude allowed for undershoot TBD TBD 1.2 V The area between the overshoot signal and VDD must be less than or equal to TBD TBD 2.4 V-ns The area between the undershoot signal and GND must be less than or equal to TBD TBD 2.4 V-ns VDDQ Overshoot 5 Maximum Amplitude = 1.2V 4 3 Volts (V) 2 1 Area = 2.4V-ns 0 -1 -2 -3 Maximum Amplitude = 1.2V GND -4 -5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0 Tims(ns) undershoot DQ/DM/DQS AC overshoot/Undershoot Definition Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 19.0 AC Timming Parameters & Specifications Symbol Parameter Row cycle time CC (DDR400@CL=3.0) Min Max B3 (DDR333@CL=2.5) Min Max Unit tRC 55 60 Refresh row cycle time tRFC 70 72 Row active time tRAS 40 RAS to CAS delay tRCD 15 18 tRP 15 18 ns tRRD 10 12 ns Row precharge time Row active to Row active delay Write recovery time 70K 42 ns ns 70K ns ns tWR 15 15 ns tWTR 2 1 tCK - - 7.5 12 ns tCK 6 12 6 12 ns 5 10 - - Clock high level width tCH 0.45 0.55 0.45 0.55 tCK Clock low level width tCL 0.45 0.55 0.45 0.55 tCK Last data in to Read command CL=2.0 Clock cycle time CL=2.5 CL=3.0 tDQSCK -0.55 +0.55 -0.6 +0.6 ns Output data access time from CK/CK tAC -0.65 +0.65 -0.7 +0.7 ns Data strobe edge to ouput data edge tDQSQ - 0.4 - 0.45 ns Read Preamble tRPRE 0.9 1.1 0.9 1.1 tCK DQS-out access time from CK/CK Note Read Postamble tRPST 0.4 0.6 0.4 0.6 tCK CK to valid DQS-in tDQSS 0.72 1.28 0.75 1.25 tCK DQS-in setup time tWPRES 0 0 ns DQS-in hold time tWPRE 0.25 0.25 tCK DQS falling edge to CK rising-setup time tDSS 0.2 0.2 tCK DQS falling edge from CK rising-hold time tDSH 0.2 0.2 tCK DQS-in high level width tDQSH 0.35 0.35 tCK DQS-in low level width tDQSL 0.35 0.35 tCK 22 13 Address and Control Input setup time(fast) tIS 0.6 0.75 ns 15, 17~19 Address and Control Input hold time(fast) tIH 0.6 0.75 ns 15, 17~19 Address and Control Input setup tIS 0.7 0.8 ns 16~19 ns 16~19 Address and Control Input hold time(slow) tIH 0.7 Data-out high impedence time from CK/CK tHZ -0.65 +0.65 -0.7 0.8 +0.7 ns 11 Data-out low impedence time from CK/CK tLZ -0.65 +0.65 -0.7 +0.7 ns 11 Mode register set cycle time tMRD 10 12 ns DQ & DM setup time to DQS tDS 0.4 0.45 ns j, k DQ & DM hold time to DQS tDH 0.4 0.45 ns j, k Control & Address input pulse width tIPW 2.2 2.2 ns 18 DQ & DM input pulse width tDIPW 1.75 1.75 ns 18 Exit self refresh to non-Read command tXSNR 75 75 ns Exit self refresh to read command tXSRD 200 Refresh interval time tREFI Output DQS valid window tQH tHP -tQHS Clock half period tHP tCLmin or tCHmin Data hold skew factor DQS write postamble time 200 7.8 tQHS - tHP -tQHS - tCLmin or tCHmin 0.5 tWPST 0.4 0.6 0.4 Active to Read with Auto precharge command tRAP 15 18 Autoprecharge write recovery + Precharge time tDAL (tWR/tCK) + (tRP/tCK) (tWR/tCK) + (tRP/tCK) tCK 7.8 us 14 - ns 21 - ns 20, 21 0.55 ns 21 0.6 tCK 12 tCK 23 Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 20.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM AC CHARACTERISTICS DDR333 DDR266 DDR200 PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX Units Notes DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD 0.5 4.0 V/ns a, m Table 2 : Input Setup & Hold Time Derating for Slew Rate Input Slew Rate tIS tIH Units Notes 0.5 V/ns 0 0 ps i 0.4 V/ns +50 0 ps i 0.3 V/ns +100 0 ps i Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate Input Slew Rate tDS tDH Units Notes 0.5 V/ns 0 0 ps k 0.4 V/ns +75 +75 ps k 0.3 V/ns +150 +150 ps k Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Delta Slew Rate tDS tDH Units Notes +/- 0.0 V/ns 0 0 ps j +/- 0.25 V/ns +50 +50 ps j +/- 0.5 V/ns +100 +100 ps j Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only) Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h Table 6 : Output Slew Rate Characteristice (X16 Devices only) Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h Table 7 : Output Slew Rate Matching Ratio Characteristics AC CHARACTERISTICS DDR266B DDR200 PARAMETER MIN MAX MIN MAX Notes Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD TBD 0.67 1.5 e,m Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 21.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). VDDQ 50 Output (Vout) 30pF Figure 1 : Timing Reference Load 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac). 5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the dc input LOW (HIGH) level. 6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE 0.2VDDQ is recognized as LOW. 7. Enables on.chip refresh and address counters. 8. IDD specifications are tested after the device is properly initialized. 9. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level for signals other than CK/CK, is VREF. 10. The output timing reference voltage level is VTT. 11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ). 12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance (bus turnaround) will degrade accordingly. 13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 15. For command/address input slew rate 1.0 V/ns 16. For command/address input slew rate 0.5 V/ns and < 1.0 V/ns Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Component Notes 17. For CK & CK slew rate 1.0 V/ns 18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 19. Slew Rate is measured between VOH(ac) and VOL(ac). 20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces. 21. tQH = tHP - tQHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers. 22. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 23. tDAL = (tWR/tCK) + (tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 22.0 System Notes a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. Test point Output 50 VSSQ Figure 2 : Pullup slew rate test load b. Pulldown slew rate is measured under the test conditions shown in Figure 3. VDDQ 50 Output Test point Figure 3 : Pulldown slew rate test load c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. Example : For typical slew rate, DQ0 is switching For minmum slew rate, all DQ bits are switching from either high to low, or low to high. The remaining DQ bits remain the same as for previous state. d. Evaluation conditions Typical : 25 C (T Ambient), VDDQ = 2.5V(for DDR266/333) and 2.6V(for DDR400), typical process Minimum : 70 C (T Ambient), VDDQ = 2.3V(for DDR266/333) and 2.5V(for DDR400), slow - slow process Maximum : 0 C (T Ambient), VDDQ = 2.7V(for DDR266/333) and 2.7V(for DDR400), fast - fast process e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. f. Verified under typical conditions for qualification purposes. g. TSOPII package divices only. h. Only intended for operation up to 266 Mbps per pin. i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)} For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions. m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotonic. Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 23.0 IBIS : I/V Characteristics for Input and Output Buffers DDR SDRAM Output Driver V-I Characteristics DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1. Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input into simulation tools. The driver characteristcs evaluation conditions are: Typical Minimum Maximum 25xC 70xC 0xC Vdd/Vddq = 2.5V, typical process Vdd/Vddq = 2.3V, slow-slow process Vdd/Vddq = 2.7V, fast-fast process Output Driver Characteristic Curves Notes: 1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure 3 and 4. 2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4. 3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed. Iout(mA) 160 Maximum 140 120 Typical High 100 80 Typical Low 60 Minimum 40 20 0 0.0 0.5 1.0 1.5 2.0 Pullup Characteristics for Full Strength Output Driver 0 .0 1 .0 2.5 Vout(V) 2 .0 0 -20 Minumum Typical Low Iout(mA) -40 -60 -80 -100 -120 -140 Typical High -160 -180 Maximum -200 -220 Pulldown Characteristics for Full Strength Output Driver Vout(V) Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Pulldown Current (mA) Voltage (V) Typical Typical Low High 0.1 6.0 0.2 pullup Current (mA) Typical Typical Low High 9.6 -6.1 9.2 18.2 20.1 13.8 26.6 18.4 29.8 33.0 0.6 34.6 0.7 0.8 Minimum Maximum Minimum Maximum 6.8 4.6 -7.6 -4.6 -10.0 12.2 13.5 -12.2 -14.5 -9.2 -20.0 0.3 18.1 0.4 24.1 26.0 -18.1 -21.2 -13.8 -29.8 33.9 -24.0 -27.7 -18.4 -38.8 0.5 23.0 41.8 -29.8 -34.1 -23.0 -46.8 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5 0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3 1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2 1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0 1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6 1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1 1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5 1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0 1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4 1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7 1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2 1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5 2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9 2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2 2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6 2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0 2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3 2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6 2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9 2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2 Table 8. Full Strength Driver Characteristics Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM 90 Maximum 80 70 Typical High 50 Iout(mA) Iout(mA) 60 40 Typical Low Minimum 30 20 10 0 0.0 1.0 2.0 Pullup Characteristics for Weak Output Driver 0.0 1.0 Vout(V) 2.0 0 Iout(mA) -10 Minumum Typical Low -20 -30 -40 -50 -60 Typical High -70 -80 Maximum -90 Pulldown Characteristics for Weak Output Driver Vout(V) Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Rev. 1.1 June. 2005 DDR SDRAM 512Mb C-die (x4, x8, x16) DDR SDRAM Pulldown Current (mA) Voltage (V) Typical Typical Low High 0.1 3.4 0.2 6.9 pullup Current (mA) Typical Typical Low High 5.0 -3.5 5.2 9.9 -6.9 Minimum Maximum 3.8 2.6 7.6 Minimum Maximum -4.3 -2.6 -5.0 -8.2 -5.2 -9.9 0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6 0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2 0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6 0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0 0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2 0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8 0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5 1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2 1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7 1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0 1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1 1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1 1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7 1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4 1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5 1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6 1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7 2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8 2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6 2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3 2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9 2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4 2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7 2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8 2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7 Table 9. Weak Driver Characteristics Rev. 1.1 June. 2005