IR4GBU..LS Series
2
Bulletin I2789 rev. A 10/02
www.irf.com
IOMaximum DC output current 4 A TC = 100°C, Resistive & inductive load
3.2 TC = 100°C, Capacitive load
IFSM Maximum peak, one-cycle 90 t = 10ms, 20ms
non-repetitive surge current,
following any rated load condition 94 t = 8.3ms, 16.7ms TJ = 150°C
and with rated VRRM reapplied
I2t Maximum I2t for fusing, 4 0 A 2s t = 10ms
initial TJ = TJ max 36 t = 8.3ms
VFM Maximum peak forward voltage 0.975 V TJ = 25 oC, IFM = 2A
per diode
IRM Typical peak reverse leakage 5 µA TJ = 25 oC, 100% VRRM
curren t per diode
VRRM Maximum repetitive peak 200 to 600 V
reverse voltage range
Forward Conduction
Voltage VRRM , max repetitive VRSM , max non-repetitive IRRM max. IRRM max.
Type number Code peak rev. voltage peak rev. voltage @ rated VRRM @ rated VRRM
TJ = TJ max. TJ = TJ max. TJ = 25°C TJ = 150°C
V V µA µA
IR4GBU..LS 02 200 300 5 250
IR4GBU..LSF 04 400 500 5 250
06 600 700 5 250
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameters IR4GBU..LS Unit Conditions
TJOperating and storage -55 to 150 oC
Tstg temperature range
RthJC Max. thermal resistance 5.0 °C/ W DC rated current through bridge (1)
junction to case
RthJA Thermal resistance, 26 °C/ W DC rated current through bridge (1)
junction to ambient
W Approximate weight 4 (0.14) g (oz)
T Mounting Torque 1.0 Nm Bridge to Heatsink
9.0 Lb.in
Thermal and Mechanical Specifications
Parameters IR4GBU..LS Unit Conditions
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum heat
transfer and bolt down using 3mm screw