62
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3179
80
60
6
4
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC3179
100max
100max
60min
40min
0.6max
15typ
60typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
VCB=80V
VEB=6V
IC=25mA
VCE=4V, IC=1V
IC=2A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
2SC3179
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
1
2
3
4
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
I
B
=100mA
40mA
60mA
80mA
30mA
10mA
20mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
1.0
0.5
0.005
0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=1A
2A
3A
0
4
2
1
3
0.4 1.20.80.6 1.0
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
–30˚C (Case Temp)
25˚C (Case Temp)
0.01 0.1 0.5 1 4
20
50
100
500
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
(VCE=4V)
0.02 0.1 0.5 41
Collector Current IC(A)
DC Current Gain hFE
20
50
100
200
125˚C
25˚C
–30˚C
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
10 503 100
0.2
1
0.5
10
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
–0.005 –0.01 –0.1 –0.5 –1 –4
20
10
0
30
40
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
30
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
BE
2.5 2.5
C
16.0±0.7
12.0min
4.0max 8.8±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0±0.2
4.8±0.2
1.4
2.0±0.1
a
b
External Dimensions MT-25(TO220)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
20
RL
(Ω)
10
IC
(A)
2
VBB2
(V)
–5
IB2
(mA)
–200
ton
(
µ
s)
0.2typ
tstg
(
µ
s)
1.9typ
tf
(
µ
s)
0.29typ
IB1
(mA)
200
VBB1
(V)
10
Weight : Approx 2.6g
a. Type No.
b. Lot No.
■
Absolute maximum ratings
