High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT904-1061T
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Features
1.0 dB Insertion Loss, Typical
12 dB Return Loss, Typical
25 dB Attenuation, Typical
45 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
SOIC-8 Surface Mount Package
RoHs Compliant
Extra Features
Covers the following Bands:
GSM
AMPS
Usable Bandwidth: 0.60 GHz to 1.20 GHz
1.5 dB Insertion Loss, Typical
1.8:1 VSWR, Typical
18.5 dB Attenuation, Typical
Description and Applications
M/A-COM’s MA4VAT904-1061T is a HMIC PIN Diode
Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as D.C.
Voltage (Current) is applied.
This device operates from 0 to 1.9 Volts at 1.89 mA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT904-1061T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
Lower Insertion Loss
Lower distortion through attenuation
Larger dynamic range for wide spread spectrum
applications
Absolute Maximum Ratings @ +25 °C 1,2
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
SOIC-8 PIN Configuration (Topview)
PIN Function Comments
1 DC1
2 GND
3 GND
4 RFin/out Symetrical as RF Input/Ouput
5 RFout/in Symetrical as RF Input/Ouput
6 GND
7 GND
8 DC2
Parameter Maximum Ratings
Operating Temperature -40 °C to +85 °C
Storage Temperature -65 °C to +150 °C
Junction Temperature +175 °C
RF C.W. Incident Power +33 dBm C.W.
Reversed Current @ -30 V 50nA
Control Current 50 mA per Diode
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT904-1061T
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Typical RF Performance Over Industry Designated RF Frequency Bands 3,4
Band Freq I. Loss Att. R. Loss IIP3 Phase
-Relative-
(MHz) (dB) (dB) (dB) (dBm) (Degree)
AMPS
RX 824-849 0.9 22 12 45
-15°
TX 869-894 0.9 22 12 45
GSM
RX 880-915 1.2 20 11 45
-20°
TX 925-960 1.2 20 11 45
Electrical Specifications @ +25 °C
Parameter Frequency Band Unit Min Typ Max
No DC Bias RF Parameter
Insertion Loss 0.80 GHz—1.00 GHz dB - 1.0 1.2
Input Return Loss dB 11 12 -
Output Return Loss dB 11 12 -
P1dB dBm 30 - -
Input IP3 dBm 45 49 -
Control Voltage V - 0 V @ OuA -
DC Bias RF Parameter
Maximum Attenuation 0.80 GHz—1.00 GHz dB 18.5 24 -
Input Return Loss @ Max Attenuation dB 15 21 -
Output Return Loss @ Max Attenuation dB 15 21 -
Input IP3 dBm 36 39 -
Control Voltage @ Max Attenuation V - 1.9 V @ 1.89 mA -
Control Current@ Max Attenuation Bias = 1.9V mA 1.2 1.8 2.4
3. All are typical values only.
4. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation.
(Please refer to the plots below)
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT904-1061T
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Plots of Typical RF Characteristics @ +25 °C
Typical Return Loss @ All Attenuation Levels Typical IIP3 vs Attenuation
Typical Attenuation vs Voltage Typical Insertion Loss & Attenuation
Typical Relative Phase Shift Per Attenuation (Voltage)
For Reference ONLY:
Insertion Loss = 0.00 V @ 0.00 mA
5dB Attenuation = 0.94 V @ 0.49 mA
10dB Attenuation = 1.26 V @ 0.93 mA
15dB Attenuation = 1.50 V @ 1.22 mA
20dB Anttenuation = 1.77V @ 1.60 mA
MA4VAT904-1061
Attenuation vs Control Voltage
-30
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5
Bias Voltage (V)
Attenuation (dB)
800MHz 900MHz 1000MHz
MA4VAT904-1061
Typical Input Return Loss
Frequency (GHz)
Return Loss dB)
0V/0mA 0.77V/0.28mA 0.93V/0.48mA 1.27V/0.93mA 1.53V/1.28mA 1.77V/1.62mA 1.89V/1.80mA
MA4VAT904-1061
Typical IP3 vs Bias Voltage @900MHz
(1MHz Offset, +0dBm Pin)
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5
Bias Voltage (V)
IP3 (dBm)
MA4VAT904-1061
Relative Phase vs Control Voltage
-90
-70
-50
-30
-10
10
30
50
70
90
0 0.5 1 1.5 2 2.5
Bias Voltage (V)
Relative Phase (Degree))
800MHz 900MHz 1000MHz
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT904-1061T
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
External Bias Components
Rbias= 680 Ohms ( 1.66 V, @1.50 mA )
Lbias= 150 nH
Cbias =100 pF
Cblock =100 pF
Package PIN Designation, External Components, and Equivalent Circuit
Lbias
Cbias RF OUT/IN
Cblock
Lbias
Control Current
Rbias
Cbias RF IN/OUT
Cblock
High IIP3 PIN Diode Variable Attenuator
0.8 - 1.0 GHz
Rev. V4
MA4VAT904-1061T
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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