MAC15SMG - ON Semiconductor

December, 2005 − Rev. 5 1Publication Order Number:

MAC15S/D

MAC15SD, MAC15SM,

MAC15SN

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave

control of AC loads such as appliance controls, heater controls, motor

controls, and other power switching applications.

Features

•Sensitive Gate allows Triggering by Microcontrollers and other

Logic Circuits

•High Immunity to dv/dt − 25 V/ms minimum at 110°C

•High Commutating di/dt − 8.0 A/ms minimum at 110°C

•Maximum Values of IGT, VGT and IH Specified for Ease of Design

•On-State Current Rating of 15 Amperes RMS at 70°C

•High Surge Current Capability − 120 Amperes

•Blocking Voltage to 800 Volts

•Rugged, Economical TO−220AB Package

•Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to 110°C, Sine Wave, 50 to

60 Hz, Gate Open) MAC15SD

MAC15SM

MAC15SN

VDRM,

VRRM 400

600

800

On−State RMS Current

(Full Cycle Sine Wave, 60Hz, TJ = 70°C) IT(RMS) 15 A

Peak Non-repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TJ = 110°C)

ITSM 120 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 60 A2s

Peak Gate Power

(Pulse Width ≤1.0 ms, TC = 70°C) PGM 20 W

Average Gat e Power (t = 8. 3 ms, TC = 70°C) PG(AV) 0.5 W

Operating Junction Temperature Range TJ−40 to +110 °C

Storage Temperature Range Tstg −40 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

15 AMPERES RMS

400 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 4

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MAC15SxG

AYWW

MARKING

DIAGRAM

x = D, M, or N

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

MAC15SD TO−220AB 50 Units / Rail

MAC15SN TO−220AB 50 Units / Rail

MAC15SDG TO−220AB

(Pb−Free) 50 Units / Rail

MAC15SNG TO−220AB

(Pb−Free) 50 Units / Rail

MAC15SM TO−220AB 50 Units / Rail

MAC15SMG TO−220AB

(Pb−Free) 50 Units / Rail

MT1

MT2

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MAC15SD, MAC15SM, MAC15SN

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case

Junction−to−Ambient RqJC

RqJA 2.0

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 110°C

IDRM,

IRRM −

−−

−0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage (Note 2) (ITM = "21A) VTM − − 1.8 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT −

−

2.0

3.0

5.0

Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA) IH− 3.0 10 mA

Latching Current (VD = 24V, IG = 5mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IL−

−

5.0

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT 0.45

0.45

0.62

0.60

0.65

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,

Gate Open, TJ = 110°C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W, see Figure 15)

(di/dt)c 8.0 10 − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rate VDRM, Ex ponential Waveform, RGK = 510W, TJ = 110°C) dv/dt 25 75 − V/ms

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

MAC15SD, MAC15SM, MAC15SN

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+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

MAC15SD, MAC15SM, MAC15SN

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0 2 4 6 8 10 12 14 16

100

110

Figure 1. RMS Current Derating

IT(RMS), RMS ON−STATE CURRENT (AMPS)

120°

180°

a = 30 and 60°

0 2 4 6 8 10 12 14 16

Figure 2. Maximum On−State Power Dissipation

IT(RMS), RMS ON−STATE CURRENT (AMPS)

180°

120°

90°

60°

a = 30°

P(AV), AVERAGE POWER DISSIPATION (WATTS)

a = CONDUCTION ANGLE

, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)TC

0.5 1 1.5 2 2.5 3 3.5 4 4.5

0.1

100

Typical @ TJ = 25 °C

VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)

Figure 3. On−State Characteristics

ITINSTANTANOUS ON-STATE CURRENT (AMPS),

Maximum @

TJ = 110°C

Maximum @

TJ = 25 °C

−40 −25 −10 5 20 35 50 65 80 95 110

TJ, JUNCTION TEMPERATURE (°C)

IH, HOLDING CURRENT (mA)

MT2 NEGATIVE

MT2 POSITIVE

−40 −25 −10 5 20 35 50 65 80 95 110

TJ, JUNCTION TEMPERATURE (°C)

IL, LATCHING CURRENT (mA)

0.1 1 10 100 1000

0.01

0.1

t, TIME (ms)

R(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

ZqJC(t) = RqJC(t)  r(t)

1@104

Figure 4. Transient Thermal Response

Figure 5. Typical Holding Current Versus

Junction Temperature Figure 6. Typical Latching Current Versus

Junction Temperature

MAC15SD, MAC15SM, MAC15SN

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−40 −25 −10 5 20 35 50 65 80 95 110

TJ, JUNCTION TEMPERATURE (°C)

IGT, GATE TRIGGER CURRENT (mA)

−40 −25 −10 5 20 35 50 65 80 95 110

0.3

0.4

0.5

0.6

0.7

0.8

0.9

TJ, JUNCTION TEMPERATURE (°C)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

Figure 7. Typical Gate Trigger Current

Versus Junction Temperature Figure 8. Typical Gate Trigger Voltage

Versus Junction Temperature

100 200 300 400 500 600 700 800 900 1000

100

120

140

600V

800V

VPK = 400V TJ = 110°C

RGK, GATE−MT1 RESISTANCE (OHMS)

STATIC dv/dt (V/mS)

400 450 500 550 600 650 700 750 800

100

110

120°C

110°C

TJ = 100°C

RG − MT1 = 510W

VPK, Peak Voltage (Volts)

STATIC dv/dt (V/mS)

100 105 110 115 120 125

100

110

800V

600V

VPK = 400V

RG − MT1 = 510W

TJ, Junction Temperature (°C)

STATIC dv/dt (V/mS)

400 450 500 550 600 650 700 750 800

100

120

140

160

180

120°C

110°C

TJ = 100°C

RG − MT1 = 510W

VPK, Peak Voltage (Volts)

STATIC dv/dt (V/mS)

Figure 9. Typical Exponential Static dv/dt

Versus Gate−MT1 Resistance, MT2(+) Figure 10. Typical Exponential Static dv/dt

Versus Peak Voltage, MT2(+)

Figure 11. Typical Exponential Static dv/dt

Versus Junction Temperature, MT2(+) Figure 12. Typical Exponential Static dv/dt

Versus Peak Voltage, MT2(*)

MAC15SD, MAC15SM, MAC15SN

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100 105 110 115 120 125

100

150

200

800V

600V

VPK = 400V

RG − MT1 = 510W

TJ, Junction Temperature (°C)

STATIC dv/dt (V/mS)

1 5 10 15 20 25

100

(di/dt)c, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms

)

(dv/dt)c, CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s)

110°C

90°C

100°C

f = 1

2 tw

(di/dt)c = 6f ITM

1000

VDRM

Figure 13. Typical Exponential Static dv/dt

Versus Junction Temperature, MT2(*)Figure 14. Critical Rate of Rise of

Commutating Voltage

Figure 15. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

LL1N4007

200 V

MEASURE

−

CHARGE

CONTROL

CHARGE TRIGGER

NON-POLAR

51 W

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

ADJUST FOR

di/dt(c)

MAC15SD, MAC15SM, MAC15SN

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PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

MAC15S/D

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