TOSHIBA 188336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 188336 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm +0.5 25-03 Small Package : SC-59 <t928 e Low Forward Voltage : VF(3)= 0.84V (Typ.) 3s 1 | $5 Fast Reverse Recovery Time : typ=7ns (Typ.) 2 & 1 3 S$mall Total Capacitance : Cp=7pF (Typ.) 2 - Sl 3 Oo EH | MAXIMUM RATINGS (Ta = 25C) ol CHARACTERISTIC SYMBOL | RATING | UNIT 25 eo Maximum (Peak) Reverse Voltage VRM 85 Vv sh | ot Reverse Voltage VR 80 Vv Maximum (Peak) Forward Current Ir 600* mA 1 Average Forward Current Io 200* mA Oop 3 1. CATHODE Surge Current (10ms) IFSmM 6* A 20 2. CATHODE . S-MINI 3. ANODE Power Dissipation P 150 mW Junction Temperature Tj 150 C JEDEC TO-236MOD Storage Temperature Tstg 55~150 C EIAJ SC-59 * Unit Rating. Total Rating=Unit Ratingx1.5 TOSHIBA 1-3G1E Weight : 0.012g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF) |Ip=10mA _ 0.64 | Forward Voltage VF) |Ip=100mA | 0.78 | Vv V3) |Ip=200mA 0.84 1.2 Reverse Current IRA) VR=30V _} 0.28 LA IR(2) VR=80V _ | 0.50 Total Capacitance Cr Vr=0, f=1MHz 7) pF Reverse Recovery Time try Ip=30mA, Fig.1 7 20 | ns Fig.1 REVERSE RECOVERY TIME (tr) TEST CIRCUIT . Marking INPUT WAVEFORM 0.014F DUT OUTPUT WAVEFORM 0 INPUT OUTPUT IF= 30mA a | 19 S f ~6V iD IR OSCILLOSCOPE 0.1 Ip = Hy 50ns (RIN =50Q) PULSE GENERATOR (Roy? =50Q) ter 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2TOSHIBA 188336 Ip VE IR VR 1 1004 300m 30h Ta=125C 100m 10h g Z 3 = 1 eo ce a ly oA 3m z SI fd Ra os S& im & 300n oO oO C 3004 B 100n = 100 > 9 B 30n 30u 10n 10u 3yu 3n ly in 0 of O04 O06 O8 10 12 14 += 216 0 10 20 30 40 50 60 70 80 90 100 FORWARD VOLTAGE Vy () REVERSE VOLTAGE Vp (V) CT VR P Ta 250 f=1MHz Ta=25C 200 150 100 50 TOTAL CAPACITANCE Cr (pF) POWER DISSIPATION P (mW) O.1 0.3 1 3 10 30 100 0 25 50 15 100 125 150 175 REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (C) 961001 EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-05-07 2/2