AP03N70H/J-H Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Repetitive Avalanche Rated D Fast Switching Speed Simple Drive Requirement G RoHS Compliant BVDSS 700V RDS(ON) 4.4 ID 2.5A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for lowprofile applications. G D S G DS TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 V ID@TC=25 Continuous Drain Current, VGS @ 10V 2.5 A ID@TC=100 Continuous Drain Current, VGS @ 10V 1.6 A 8 A 54.3 W 0.44 W/ 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 31 mJ IAR Avalanche Current 2.5 A TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Value Units Rthj-c Symbol Thermal Resistance Junction-case Max. 2.3 /W Rthj-a Thermal Resistance Junction-ambient Max. 110 /W Parameter Data & specifications subject to change without notice 200417062-1/4 AP03N70H/J-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 700 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.6 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.6A - - 4.4 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=1.6A - 2 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=30V - - 100 nA ID=1A - 12 20 nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=1mA Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 4 - nC VDD=300V - 8.5 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=2.5A - 6 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 19 - ns tf Fall Time RD=120 - 8 - ns Ciss Input Capacitance VGS=0V - 590 950 pF Coss Output Capacitance VDS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Rg Gate Resistance f=1.0MHz - 3.4 5.1 Min. Typ. IS=2.5A, VGS=0V - - 1.5 V IS=2.5A, VGS=0V, - 407 - ns dI/dt=100A/s - 2110 - nC Source-Drain Diode Symbol VSD Parameter 3 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25 , IAS=2.5A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP03N70H/J-H 4 3 10V 6.0V o T C =25 C o 10V 5.0V T C =150 C 2 ID , Drain Current (A) ID , Drain Current (A) 3 2 5.0V 1 4.5V 2 4.5V 1 4.0V 1 V G =3.5V V G =4.0V 0 0 0 5 10 15 20 25 0 Fig 1. Typical Output Characteristics 15 20 25 3.0 I D =2.5A V G =10V Normalized RDS(ON) 1.1 Normalized BVDSS (V) 10 Fig 2. Typical Output Characteristics 1.2 1.0 2.0 1.0 0.9 0.8 0.0 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 5 10 4 VGS(th) (V) 100 T j = 150 o C IS (A) 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) T j = 25 o C 1 3 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70H/J-H f=1.0MHz 10000 I D =1A V DS =480V 12 C iss C (pF) VGS , Gate to Source Voltage (V) 16 8 100 C oss 4 C rss 0 1 0 5 10 15 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 10 100us 1 ID (A) 1ms 10ms 100ms DC 0.1 o T c =25 C Single Pulse DUTY=0.5 0.2 0.1 0.05 0.1 0.02 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.01 1 10 100 1000 10000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4