1
Motorola Thyristor Device Data
Silicon Bidirectional Triode Thyristors
... designed primarily for ac power switching. The gate sensitivity of these triacs
permits the use of economical transistorized or integrated circuit control circuits, and
it enhances their use in low-power phase control and load-switching applications.
•Very High Gate Sensitivity
•Low On-State Voltage at High Current Levels
•Glass-Passivated Chip for Stability
•Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Suffix Symbol Value Unit
Peak Repetitive Off-State Voltage(1)
(TJ = 25 to 100°C, Gate Open)
T2322, T2323
B
D
M
VDRM 200
400
600
Volts
RMS On-State Current (TC = 70°C)
(Full-Cycle Sine Wave 50 to 60 Hz) IT(RMS) 2.5 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz) ITSM 25 Amps
Circuit Fusing
(t = 8.3 ms) I2t 2.6 A2s
Peak Gate Power (1 µs) PGM 10 Watts
Average Gate Power (TC = 60°C + 38.3 ms) PG(AV) 0.15 Watt
Peak Gate Current (1 µs) IGM 0.5 Amp
Operating Junction Temperature Range TJ–40 to +110 °C
Storage Temperature Range Tstg –40 to +150 °C
Mounting Torque (6-32 Screw)(2) — 8 in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds.
Consult factory for lead bending options.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by T2322/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
CASE 77-08
(TO-225AA)
STYLE 5
SENSITIVE GATE TRIACs
2.5 AMPERES RMS
200 thru 600 VOLTS
*Motorola preferred devices
MT1
G
MT2 MT1
G
MT2
MT2
2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 3.5 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = 100°C
IDRM —
——
0.2 10
0.75 µA
mA
Peak On-State Voltage*
(ITM = 10 A) T2323 Series
T2322 Series
VTM —
—1.7
1.7 2.6
2.2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 30 Ω)
All Modes T2322 Series
MT2(+), G(+); MT2(–), G(–) T2323 Series
MT2(+), G(–); MT2(–),I G(+) T2323 Series
IGT
—
—
—
—
—
—
10
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 Ω, TC = 25°C)
(VD = VDRM, RL = 125 Ω, TC = 100°C)
VGT —
0.15 1
—2.2
—
Volts
Holding Current
(VD = 12 V, ITM = 150 mA, Gate Open) IH— 15 30 mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA) tgt — 1.8 2.5 µs
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C) dv/dt 10 100 — V/µs
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)
dv/dt(c) 1 4 — V/µs
*Pulse Test: Pulse Width
p
300 µs, Duty Cycle
p
2%.
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 77-08
(TO–225AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
1 32
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.055 1.15 1.39
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 ––– 1.02 –––
_ _
4 Motorola Thyristor Device Data
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T2322/D
*T2322/D*
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