© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 10
1Publication Order Number:
NOII5SM1300A/D
NOII5SM1300A
IBIS5 1.3 Megapixel CMOS
Image Sensor
Features
1280 x 1024 Active Pixels
6.7 mm x 6.7 mm Square Pixels
2/3” Optical Format
Global and Rolling Shutter
Master Clock: 40 MHz
27 fps (1280 x 1024) and 106 fps (640 x 480)
On-chip 10-bit ADCs
Serial Peripheral Interface (SPI)
Windowing (ROI)
Sub-sampling: 1:2 Mode
Supply Voltage
Analog: 3.0 V to 4.5 V
Digital: 3.3 V
I/O: 3.3 V
Power Consumption: 200 mW
0°C to +65°C Operating Temperature Range
84-pin LCC Package
These Devices are PbFree and are RoHS Compliant
Applications
Machine Vision Robotics
Inspection Traffic Monitoring
Description
The IBIS5-1300 is a solid state CMOS image sensor that integrates the functionality of complete analog image acquisition,
digitizer, and digital signal processing system on a single chip. This 1.3-mega pixel (1280 x 1024) CMOS active pixel sensor
dedicated to industrial vision applications features both rolling and snapshot (or global) shutter. Full frame readout time is
36 ms (max. 27.5 fps), and readout speed are boosted by windowed region of interest (ROI) readout. Another feature includes
the double and multiples slope functionality to capture high dynamic range scenes. The sensor is available in a monochrome
version or Bayer (RGB) patterned color filter array.
User programmable row and column start/stop positions allow windowing down to a 2x1 pixel window for digital zoom.
Sub sampling or viewfinder mode reduces resolution while maintaining the constant field of view and an increased frame
rate. An on-chip analog signal pipeline processes the analog video output of the pixel array. Double sampling (DS) eliminates
the fixed pattern noise. The programmable gain and offset amplifier maps the signal swing to the ADC input range. A 10-bit
ADC converts the analog data to a 10-bit digital word stream. The sensor uses a 3-wire serial peripheral interface (SPI), or a
16-bit parallel interface. It operates with a 3.3 V power supply and requires only one master clock for operation up to 40 MHz.
It is housed in an 84-pin ceramic LCC package.
ORDERING INFORMATION
Marketing Part Number Description Package Device Status
NOII5SM1300A-QDC Mono with glass 84pin LCC EndofLife (EOL)
Last Time Buy
PCN Close date:
October 29, 2011
NOII5SM1300A-QWC Mono without glass
NOII5SC1300A-QDC Color with glass
NOII5FM1300A-QDC Mono on thicker epitaxial layer, with glass
NOTE: See Ordering Code Information on page 33 for more information.
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Figure 1. IBIS51300 Photo
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CONTENTS
Features 1.....................................
Applications 1.................................
Description 1..................................
Ordering Information 1.........................
Contents 2....................................
Specifications 3................................
Key Specifications 3..........................
Electrical Specifications 4......................
Architecture and Operation 5....................
Floor Plan 5.................................
Pixel 6.....................................
Image Core Operation 9........................
XAddressing 11..............................
YAddressing 11..............................
Output Amplifier 12............................
Analog-to-Digital Converter 13...................
Electronic Shutter Types 15......................
Sequencer 15.................................
Timing Diagrams 20.............................
Frame Rate 20................................
Timing Requirements 20........................
Global Shutter: Single Slope Integration 21.........
Global Shutter: Pixel Readout 21..................
Global Shutter: Multiple Slope Integration 23........
Rolling Shutter Operation 24.....................
Windowing in X-Direction 24....................
Windowing in Y-Direction 25....................
Initialization (Startup Behavior) 25................
Package Information 26..........................
Pin List 26...................................
Pad Position and Packaging 29...................
Package Drawing with Glass 30..................
Glass Lid 32..................................
Handling Precautions 32.........................
Limited Warranty 32............................
Return Material Authorization (RMA) 32...........
RoHS (Pb-free) Compliance 32...................
Acceptance Criteria Specification 33...............
Ordering Code Definition 33......................
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SPECIFICATIONS
Key Specifications
Table 1. GENERAL SPECIFICATIONS
Parameter Specifications
Active pixels 1280 (H) x 1024 (V)
Pixel size 6.7 mm x 6.7 mm
Master Clock 40 MHz
Shutter type Global and rolling shutter
Frame rate 27 fps at full resolution
Windowing (ROI) Randomly programmable ROI
read out. Implemented as scan-
ning of lines or columns from an
uploaded position
ADC resolution 10-bit, on-chip
Extended dynamic range Global shutter: Up to 4 slopes
Rolling shutter: Double slope
Power dissipation 200 mW
Table 2. ELECTRO OPTICAL SPECIFICATIONS
Parameter Specifications
Sensitivity 8.4 V/lux.s at 650 nm
Full Well Charge 62500 e-
Temporal Noise 2.5 LSB10
Parasitic light sensitivity 3%
Dark noise 21 e-
Signal to Noise Ratio 64 dB
Fixed pattern noise (FPN) 4.5 LSB10
Dark signal 5.5 LSB10/sec at 30°C
Table 3. RECOMMENDED OPERATING RATINGS
Symbol Description Min Max Units
TJ (Note 2) Operating temperature range 0 65 °C
TS (Note 1) Storage temperature range 20 40 °C
Storage humidity range 30 60 %RH
Table 4. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol Parameter Min Max Units
ABS
(3.0 V to 3.3 V supply group)
ABS rating for 3.0 V and 3.3 V supply group –0.5 4.3 V
ABS
(4.5 V supply group)
ABS rating for 4.5 V supply group –0.5 (VDD + 0.5) V
TS (Note 1) ABS storage temperature range 0 150 °C
ABS storage humidity range 5 90 %RH
%RH Humidity (Relative) -85% at 85°C
Electrostatic discharge (ESD)
(Note 3)
Human Body Model (HBM) (Note 4) V
Charged Device Model (CDM)
LU (Note 3) Latch-up (Note 5) mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Absolute maximum ratings are limits beyond which damage may occur. Long term exposure toward the maximum storage temperature
accelerates color filter degradation.
2. Operating ratings are conditions in which operation of the device is intended to be functional.
3. ON Semiconductor recommends that customers become familiar with, and follow the procedures in JEDEC Standard JESD625A. Refer
to Application Note AN52561.
4. The IBIS51300 complies with JESD22A114 HBM Class 0 and JESD22C101 Class I. It is recommended that extreme care be taken while
handling these devices to avoid damages due to ESD event. Refer to Application Note AN52561.
5. The IBIS51300 does not have latchup protection.
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4
Electrical Specifications
Recommended Operating Conditions
Table 5. RECOMMENDED OPERATING CONDITIONS
Parameter Description Typical
Currents
Peak
Currents
Min Typ Max Units
VDDH Voltage on HOLD switches. 0.047 mA 100 mA +3.3 +4.5 +4.5 V
VDDR_LEFT Highest reset voltage. 0.050 mA 100 mA +3.3 +4.5 +4.5 V
VDDC Pixel core voltage. 0.052 mA 100 mA +2.5 +3.0 +3.3 V
VDDA Analog supply voltage of the image core. 19.265 mA N/A +3.0 +3.3 +3.6 V
VDDD Digital supply voltage of the image core. 5.265 mA N/A +3.0 +3.3 +3.6 V
IDDA_ADC Analog supply of ADC 34.5 mA N/A N/A N/A N/A mA
IDDD_ADC Digital supply of ADC 10.5 mA N/A N/A N/A N/A mA
TACommercial operating temperature. N/A N/A 0 30 65 °C
All parameters are characterized for DC conditions after thermal equilibrium is established.
Always tie unused inputs to an appropriate logic level, for example, either VDD or GND.
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However,
take normal precautions to avoid application of any voltages higher than the maximum rated voltages to this high impedance
circuit.
DC Electrical Characteristics
Table 6. DC ELECTRICAL CHARACTERISTICS
Parameter Characteristic Condition Min Max Unit
VIH Input high voltage 2.1 V
VIL Input low voltage 0.6 V
IIN Input leakage current VIN= VDD or GND –10 +10 mA
VOH Output high voltage VDD = min; IOH = –100 mA2.2 V
VOL Output low voltage VDD = min; IOH = 100 mA0.5 V
IDD Maximum operating current System clock 40 MHz 40 60 mA
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ARCHITECTURE AND OPERATION
This section presents detailed information about the most important sensor blocks
Figure 2. Block Diagram of IBIS51300 Image Sensor
Xaddressing
Ar
Column amplifiers
nalog multiplexe
Pixel
Output
amplifier
Pixel core
g
ADC
Sequencer
Ima er core
r
Y
Senso
tlef Y-right
addressing
External
connection
addressing
System clock
40 MHz
Reset
Sample
Select
Column output
C
Floor Plan
Figure 2 shows the architecture of the IBIS5-1300 image
sensor. It consists basically of a pixel array, one X- and two
Y-addressing registers for the readout in X- and Y-direction,
column amplifiers that correct for the fixed pattern noise, an
analog multiplexer, and an analog output amplifier
Use the left Y-addressing register for readout operation.
Use the right Y-addressing register for reset of pixel rows. In
multiple slope synchronous shutter mode, the right
Y-addressing register resets the whole pixel core with a
lowered reset voltage. In rolling curtain shutter mode, use
the right Y-addressing register for the reset pointer in single
and double slope operation to reset one pixel row.
The on-chip sequencer generates most of the signals for
the image core. Some basic signals (such as start/stop
integration, line and frame sync signals) are generated
externally.
A 10-bit ADC is implemented on chip but electrically
isolated from the image core. You must route the analog
pixel output to the analog ADC input on the outside.
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Pixel
A description of the pixel architecture and the color filter
array follows.
Architecture
The pixel architecture used in the IBIS5-1300 is a
4-transistor pixel as shown in Figure 3. Implement the pixel
using the high fill factor technique. The 4T-pixel features a
snapshot shutter but can also emulate the 3T-pixel by
continuously closing sampling switch M2. Using M2 as a
global sample transistor for all pixels enables the snapshot
shutter mode. Due to this pixel architecture, integration
during read out is not possible in synchronous shutter mode.
Figure 3. 4T Pixel Architecture
reset
sample
mux
column
output
C
M1
M2 M3
M4
Color Filter Array
The IBIS5-1300 is also processed with a Bayer RGB color
pattern. Pixel (0,0) is a green filter and is situated on a
green-blue row. Green1 and Green2 have a slightly different
spectral response due to cross talk from neighboring pixels.
Green1 pixels are located on a blue-green row, green2 pixels
are located on a green-red row. Figure 5 shows the response
of the color filter array as function of the wavelength. Note
that this response curve includes the optical cross talk of the
pixels.
Figure 4. Color Filter Arrangement of Pixels
RG2
B
G1
(0,0)
Figure 5. Spectral Response for IBIS51300 Color
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Spectral Response Curve
Figure 6. Spectral Response Curve
QE 10%
QE 20%
QE 30%
QE 40%
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
400
W a ve le nght [nm]
Spec res [A/W]
NOII5SM1300A
NOII5FM1300A
500 600 700 800 900 1000
Figure 6 shows the spectral response characteristic for the
NOII5SM1300A and the NOII5FM1300A.
The curve is measured directly on the pixels. It includes
effects of non-sensitive areas in the pixel, for example,
interconnection lines. The sensor is light sensitive between
400 and 1000 nm. The peak QE x FF is 30%, approximately
around 650 nm. In view of a fill factor of 40%, the QE is thus
close to 75% between 500 and 700 nm. The
NOII5FM1300A has superior response in the NIR region
(700-900 nm).
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Electro-voltaic Response Curve
Figure 7. ElectroVoltaic Response Curve
0
0,2
0,4
0,6
0,8
1
1,2
0 10000 2000030000 4000050000 6000070000 80000
# electrons
Output swing [V]
Figure 7 shows the pixel response curve in linear response
mode. This curve is the relation between the electrons
detected in the pixel and the output signal. The resulting
voltage-electron curve is independent of any parameters
(integration time, and others). The voltage to electrons
conversion gain is 17.6 mV/electron.
NOII5FM1300A:
The NOII5FM1300A is processed on a thicker epitaxial
silicon featuring higher sensitivity in the NIR (Near Infra
Red) wavelengths (700–900 nm). The spectral response
curves, highlighting the difference between IBIS5-1300
using the standard process and thicker epitaxial layer
process are shown in Figure 6 on page 7. Various machine
vision applications use light sources in the NIR, hence the
NOII5FM1300A sensor has a significant sensitivity
advantage in the NIR domain.
A drawback of the thicker epitaxial layer is a slight
performance decrease in MTF (Modular Transfer Function
or electrical pixel to pixel cross-talk) as indicated in Table 7.
Table 7. MTF COMPARISON
Direction Wavelength NOII5SM1300A NOII5FM1300A
Horizontal 600 0.58 0.37
Horizontal 700 0.18
Horizontal 800 0.16
Horizontal 900 0.07
Vertical 600 0.53 0.26
Vertical 700 0.16
Vertical 800 0.13
Vertical 900 0.11
The resulting image sharpness is hardly affected by this
decreased MTF value. Both IBIS5-1300 versions are fully
pin compatible and have identical timing and biasing.
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Image Core Operation
Image Core Operation and Signalling
Figure 8 is a functional representation of the image core
without sub-sampling and column/row swapping circuits.
Most of the signals involved are not available from the
outside because they are generated by the X-sequencer and
SS-sequencer blocks.
The integration of the pixels is controlled by internal
signals such as reset, sample, and hold which are generated
by the on-chip SS-sequencer that is controlled with the
external signals SS_START and SS_STOP. Reading out the
pixel array starts by applying a Y_START together with a
Y_CLOCK signal; internally this is followed by a
calibration sequence to calibrate the output amplifiers
(during the row blanking time). Signals necessary to do this
calibration are generated by the on-chip X-sequencer. This
calibration sequence takes typically 3.5 ms and is necessary
to remove ‘Fixed Pattern Noise’ of the pixels and of the
column amplifiers themselves by means of a double
sampling technique. After the row blanking time, the pixels
are fed to the output amplifier. The pixel rate is equal to the
SYS_CLOCK frequency.
Image Core Supply Considerations
The image sensor has several supply voltages:
VDDH is the voltage that controls the sample switches.
Do not apply a higher voltage than this to the chip.
The VDDR_LEFT voltage is the highest (nominal) reset
voltage of the pixel core.
The VDDR_RIGHT voltage is generated from the
VDDR_LEFT voltage using a circuit that is programmed
with the KNEEPOINT_LSB/MSB bits in the sequencer
register (see also Pixel reset kneepoint for multiple slope
operation (bits 8, 9, and 10) on page 17). You can disconnect
the VDDR_RIGHT pin from the circuit and apply an
external voltage to supply the multiple slope reset voltage by
setting the VDDR_RIGHT_EXT bit in the SEQUENCER
register. When no external voltage is applied
(recommended), connect the VDDR_RIGHT pin to a
capacitor (recommended value = 1 mF). VDDC is the pixel
core supply. VDDA is the image core and periphery analog
supply. VDDD is the image core and periphery digital
supply .
Note that the IBIS5-1300 image sensor has no on-chip
power rejection circuitry. As a consequence all variations on
the analog supply voltages can contribute to random
variations (noise) on the analog pixel signal, which is seen
as random noise in the image. During the camera design,
take precautions to supply the sensor with very stable supply
voltages to avoid this additional noise. The pixel array
(VDDR_LEFT, VDDH and VDDC) analog supplies are
especially vulnerable to this.
Figure 8. Image Core
_Y START
SAMPLE
HOLD
K
Y
Y_CLOC
g Yright addressingleft addressin
ABUS_
Pixel row
Y_CLOCK
X addressing
Pixel column
_BUS B
_
SYS CLOCK
Read-pointer
_
Y START
RESET
VDDH
VDDR_LEFT
_
Vddreset
VDDR RIGHT
Output amplifier
VDDC
_
Pixel
A
Pixel
PXL OUT
B
Column amplifiers
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Global Shutter Supply Considerations
The recommended supply voltage settings listed in
Table 8 are used when the sensor is in global shutter mode
only.
Table 8. GLOBAL SHUTTER RECOMMENDED
SUPPLY SETTINGS
Parameter Description Typ Units
VDDH Voltage on HOLD
switches.
+4.5 V
VDDR_LEFT Highest reset voltage. +4.5 V
VDDC Pixel core voltage. +3.3 V
VDDA Analog supply voltage of
the image core.
+3.3 V
VDDD Digital supply voltage of
the image core.
+3.3 V
GNDA Analog ground. 0 V
GNDD Digital ground. 0 V
GND_AB Anti-blooming ground. 0 V
Dual Shutter Supply Considerations
If you analyze the supply settings listed in Table 8, you can
see some fixed column non-uniformities (FPN) when
operating in rolling shutter mode. If a dual shutter mode
(both rolling and global shutter) is required during
operation, you must apply the supply settings listed in
Table 9 to achieve the best possible image quality.
Table 9. DUAL SHUTTER RECOMMENDED SUPPLY
SETTINGS
Parameter Description Typ Units
VDDH Voltage on HOLD switches. +4.5 V
VDDR_LEFT Highest reset voltage. +4.5 V
VDDC Pixel core voltage. +3.0 V
VDDA Analog supply voltage of
the image core.
+3.3 V
VDDD Digital supply voltage of the
image core.
+3.3 V
GNDA Analog ground. 0 V
GNDD Digital ground. 0 V
GND_AB Anti-blooming ground. 0 V
Image Core Biasing Signals
Table 10 summarizes the biasing signals required to drive
the IBIS5-1300. For optimization on speed and power
dissipation of all internal blocks, several biasing resistors are
needed.
Each biasing signal determines the operation of a
corresponding module in the sense that it controls the speed
and power dissipation. The tolerance on the DC-level of the
bias levels can vary ±150 mV due to process variations.
Table 10. OVERVIEW OF BIAS SIGNALS
Signal Comment Related module DC-Level
DEC_CMD Connect to VDDA with R = 51 kW and decouple to GNDA with C = 100 nF. Decoder stage. 1.0 V
DAC_VHIGH Connect to VDDA with R = 0 W.High level of DAC. 3.3 V
DAC_VLOW Connect to GNDA with R = 0 W.Low level of DAC. 0.0 V
AMP_CMD Connect to VDDA with R = 51 kW and decouple to GNDA with C = 100 nF. Output amplifier stage. 1.2 V
COL_CMD Connect to VDDA with R = 51 kW and decouple to GNDA with C = 100 nF. Columns amplifiers stage. 1.0 V
PC_CMD Connect to VDDA with R = 22 kW and decouple to GNDA with C = 100 nF. Pre-charge of column
busses.
1.17 V
ADC_CMD Connect to VDDA with R = 51 kW and decouple to GNDA with C = 100 nF. Analog stage of ADC. 1.0 V
ADC_VHIGH Connect to VDDA with R = 230 W and decouple to GNDA with C = 100 nF. High level of ADC. 2.7 V
ADC_VLOW Connect to GNDA with R = 410 W and decouple to GNDA with C = 100 nF. Low level of ADC. 1.2 V
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XAddressing
Because of the high pixel rate, the X-shift register selects
two columns at a time for readout, so it runs at half the
system clock speed. All even columns are connected to
bus A; all odd columns to bus B. In the output amplifier,
bus A and bus B are combined into one stream of pixel data
at system clock speed.
At the end of the row blanking time, the X_SYNC switch
is closed while all other switches are open and the decoder
output is fed to the register. The decoder loads a logical one
in one of the registers and a logical zero in the rest. This
defines the starting point of the window in the X direction.
As soon as the X_SYNC signal is released, the register starts
shifting from the start position.
When no sub-sampling is required, X_SUB is inactive.
The pointer in the shift-register moves one bit at a time.
When sub-sampling is enabled, X_SUB is activated. The
shift register moves two bits at a time. Taking into account
that every register selects two columns, hence two pixels
sub-sampling results in the pattern ‘XXOOXXOO’ when
eight pixels are considered. Suppose the columns are
numbered from left to right starting with 0 (zero) and
sub-sampling is enabled:
Figure 9. Column Structure
Reg(n+1) Reg(n+2)Reg(n)
X_SYNC
_
A
X SUB
BAB
Column
amplifiers
BA
_ABUS
X_S
BUS_B
WAP30
X_SWAP12
()COL i
COL(i+1)
DEC(n+1) DEC(n+2)
1/2
Output
amplifier
SYS_CLOCK
COL(i+3)
COL (i+2)
If columns 1 and 2, 5 and 6, 9 and 10 are swapped using
the SWAP_12 switches, a normal sub-sampling pattern of
‘XOXOXOXO’ is obtained.
If columns 3 and 4, 7 and 8, 11 and 12 are swapped
using the SWAP_30 switches, the pattern is
‘OXOXOXOX’.
If both the SWAP_12 and SWAP_30 switches are closed,
pattern ‘OOXXOOXX’ is obtained.
Figure 10. Row Structure
Reg(n)
Reg(n+1)
Reg(n+2)
Reg(n+3)
Reg(n+4)
SRH
SRH
SRH
SRH
Y_SWAP12
ROW(n+1)
ROW(n+2)
ROW(n+3)
ROW(n+4)
Y_SWAP30Y_SYNC Y_SUB
DEC(n+1)
DEC(n+2)
DEC(n+3)
DEC(n+4)
Because every register addresses two columns at a time,
the addressable pixels range in sub-sample mode is from
zero to half the maximum number of pixels in a row (only
even values). For instance: 0, 2, 4, 6, 8 638.
Table 11. X–SUB-SAMPLING PATTERNS
X_SUB X_SWAP12 X_SWAP30 Sub-Sample
Pattern
0 0 0 XXXXXXXX
1 0 0 XXOOXXOO
1 1 0 XOXOXOXO
1 0 1 OXOXOXOX
1 1 1 OOXXOOXX
YAddressing
For symmetry reasons, the sub-sampling modes in the
Y-direction are the same as in X-direction.
Table 12. Y–SUB-SAMPLING PATTERNS
Y_SUB Y_SWAP12 Y_SWAP30 Sub-Sample
Pattern
0 0 0 XXXXXXXX
1 0 0 XXOOXXOO
1 1 0 XOXOXOXO
1 0 1 OXOXOXOX
1 1 1 OOXXOOXX
In normal mode, the pointer for the pixel row is shifted one
at a time.
When sub-sampling is enabled, Y_SYNC is activated.
The Y-shift register shifts 2 succeeding bits and skips the 2
next bits. This results in pattern ‘XXOOXXOO’.
Activating Y_SWAP12 results in pattern
‘XOXOXOXO’.
Activating Y_SWAP30 results in pattern
‘OXOXOXOX’.
Activating both Y_SWAP12 and Y_SWAP30 results in
pattern ‘OOXXOOXX’.
The addressable pixel range when Y-sub sampling is
enabled is: 0–1, 4–5, 8–9, 12–13, 1020–1021
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Output Amplifier
Architecture and Settings
The output amplifier stage is user programmable for gain
and offset level. Gain is controlled by 4-bit wide word; offset
by a 7-bit wide word. Gain settings are on an exponential
scale. Offset is controlled by a 7-bit wide DAC, which
selects the offset voltage between two reference voltages
(DAC_VHIGH and DAC_VLOW) on a linear scale.
The amplifier is designed to match the specifications of
the imager array output. This signal has a data rate of
40 MHz. The output impedance of the amplifier is 260
Ohms.
At unity gain and with a mid-range offset value, the
amplifier outputs a signal in between 1.59 V (light) and
2.70 V (dark). This analog range must fit to the input range
of the ADC, external or internal. The output swing in unity
gain is approximately 1.11 V and it is maximum 1.78 V at
the highest gain settings. So, the effective signal range is
between 1.17 V and 2.95 V, depending on the gain and offset
settings of the amplifier.
Figure 11. Output Structure
A
GAIN [03]
unity gain
1
S
R
odd
even S
R
+
DAC_VHIGH
DAC_VLOW
DAC_RAW [6:0]
DAC_FINE [6:0]
DAC_RAW
DAC_FINE
PXL_OUT
+
Figure 11 shows the architecture of the output amplifier.
The odd and even column amplifiers sample both pixel and
reset value to perform a double sampling FPN correction.
You can adjust two different offsets using the on-chip DAC
(7 bit): DAC_FINE and DAC_RAW. DAC_FINE is used to
tune the difference between odd and even columns;
DAC_RAW is used to add a common (both even and odd
columns) to the FPN corrected pixel value. This pixel value
is fed to the first amplifier stage which has an adjustable
gain, controlled by a 4-bit word (‘GAIN [03]’).
After this, a unity feedback amplifier buffers the signal
and the signal leaves the chip. This second amplifier stage
determines the maximal readout speed, that is, the
bandwidth and the slew rate of the output signal. The whole
amplifier chain is designed for a data rate of 40 Mpix/s (at
20 pF).
The analog output of the sensor is not designed to drive
very large loads on the PCB. Therefore, it is advised that the
PXL_OUT is connected to the ADC_IN right below the
sensor in the top layer with a thick track. It is better not to
have vias on this trace. If there is a socket being used, then
it is advised that we buffer the PXL_OUT close to the sensor
output pin and then take the signal to the ADC_IN.
Output Amplifier Gain Control
The output amplifier gain is controlled by a 4-bit word set
in the AMPLIFIER register (see section Amplifier Register
(6:0) on page 19). An overview of the gain settings is given
in Table 13.
Table 13. OVERVIEW GAIN SETTINGS
Bits DC Gain Bits DC Gain
0000 1.37 1000 6.25
0001 1.62 1001 7.89
0010 1.96 1010 9.21
0011 2.33 1011 11.00
0100 2.76 1100 11.37
0101 3.50 1101 11.84
0110 4.25 1110 12.32
0111 5.20 1111 12.42
Setting of the DAC Reference Voltage
In the output amplifier, the offset is trimmed by loading
registers DACRAW_REG and DACFINE_REG.
DAC_RAW is used to adjust the offset of the output
amplifier and DAC_FINE is used to tune the offset between
the even and odd columns. These registers are inputs for two
DACs (see Figure 12) that operate on the same resistor that
is connected between pins DAC_VHIGH and
DAC_VLOW. The range of the DAC is defined using a
resistive division with RVHIGH, RDAC and RVLOW.
Figure 12. Internal and External ADC Connections
RDAC_VHIGH
DAC_VLOW = 0V
RDAC_VLOW
R
DAC_VHIGH = 3.3V
DAC 7.88 kW
external
internal
internal
external
The internal resistor RDAC has a value of approximately
7.88 kW. The recommend resistor values for both
DAC_VLOW and DAC_VHIGH are 0 W.
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Analog-to-Digital Converter
The IBIS5-1300 has a 10-bit flash analog digital converter
running nominally at 40 Msamples/s. The ADC is
electrically separated from the image sensor. Tie the input of
the ADC (ADC_IN; pin 69) externally to the output
(PXL_OUT1; pin 28) of the output amplifier.
Table 14. ADC SPECIFICATIONS
Input range 1–3 V (Note 1)
Quantization 10 bits
Nominal data rate 40 Msamples/s
DNL (linear conversion mode) Typ. < 0.5 LSB
INL (linear conversion mode) Typ. < 3 LSB
Input capacitance < 20 pF
Power dissipation at 40 MHz Typ. 45 mA x 3.3 V = 150 mW
Conversion law Linear / Gamma-corrected
1. The internal ADC range is typically 100 mV lower than the
external applied ADC_VHIGH and ADC_VLOW voltages due to
voltage drops over parasitic internal resistors in the ADC.
ADC Timing
At the rising edge of SYS_CLOCK, the next pixel is fed
to the input of the output amplifier. Due to internal delays of
the SYS_CLOCK signal, it takes approximately 20 ns
before the output amplifier outputs the analog value of the
pixel, as shown in Figure 13.
The ADC converts the pixel data on the rising edge of the
ADC_CLOCK, but it takes two clock cycles before this
pixel data is at the output of the ADC. Figure 13 shows this
pipeline delay
Due to these delays, it is advisable that a variable phase
difference is foreseen between the ADC_CLOCK and the
SYS_CLOCK to tune the optimal sample moment of the
ADC.
Figure 13. ADC Timing
Setting ADC Reference Voltages
Figure 14. Internal and External ADC Connections
RADC_VHIGH
AV
A
DC_VLOW ~ 1.8
V
RADC_VLOW
R
DC_VHIGH ~ 2.7
ADC
external
internal
external
The internal resistor RADC has a value of approximately
585 W. This results in the following values for the external
resistors:
Resistor Value (O)
RADC_VHIGH 360
RADC 585
RADC_VLOW 1200
Note that the recommended ADC resistor values yield in
a conversion of the full analog output swing at unity gain
(VDARK_ANALOG < ADC_VHIGH and VLIGHT_ANALOG >
ADC_VLOW).
The values of the resistors depend on the value of RADC.
To assure proper working of the ADC, make certain the
voltage difference between ADC_VLOW and
ADC_VHIGH is at least 1.0 V.
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Nonlinear and Linear Conversion Mode—‘gamma’ Correction
Figure 15 shows the ADC transfer characteristic. The nonlinear (exponential) ADC conversion is intended for
gamma-correction of the images. It increases contrast in dark areas and reduces contrast in bright areas. The non-linear transfer
function is given by the following equation:
Vin ADC_VHIGH ADC_VHIGH ADC_VLOW()*a*x b*x2
+
a*1023 b*10232
+
+=
where a = 5; b = 0.027; x = digital output code
Figure 15. Linear and Nonlinear ADC Conversion Characteristics
Sensor Digital Outputs
The digital outputs of the sensor are not designed to drive
large loads. Hence, the outputs cannot be used to directly
drive cables or long traces on the PCB. If it is required to
drive traces more than 5 inches long, it is advisable to use a
buffer for all the digital signals given out by the sensor.
Sensor Clock Inputs
The ADC_CLOCK and the SYS_CLOCK of the sensor
are typically 180 phase shifted from each other. However,
depending on the board layout, it is possible that there may
be a variation (increased phase shift of ADC_CLOCK with
respect to SYS_CLOCK) in the phase shift between the
clocks.
So, it is recommended that the phase shift between the
clocks is maintained programmable.
Clock Jitter Requirements:
Min low time: 11.00 ns
Min high time: 11.00 ns
max rise time: 5 ns
max fall time: 5 ns
Max Duty cycle: 47% to 53%
Max period jitter: 150 ps
It is important that the clock is stable, reproducible and has
low jitter. SYS_CLOCK and ADC_CLOCK are the most
critical clocks, both clock interact in the readout path and
influence the sensor performance.
Black Calibration
Due to slight variations in the chip fabrication process, the
output analog voltage of the PGA is not perfectly matched
to the input analog range of the ADC. As a result, a reduced
dynamic range is compared when comparing
sensors/cameras from different lots. This is especially true
in the dark as it is possible that a part of the analog range gets
clipped when it reaches the ADC.
For this reason, black calibration step is required. Because
this is a fixed setting, and varies very slightly with
temperature, the setting can be done at the factory itself.
While grabbing normal images, the settings can be loaded
from an on-board memory.
In the IBIS5 image sensor, black calibration step also tries
to match the output of the odd and even channels.
The steps for black calibration are -
1. Put the sensor in dark.
2. Change DAC_RAW such that no pixel or least
number of pixels (assuming there are defect
pixels) have a zero ADC output value.
3. Change DAC_FINE such that the average of the
odd columns is almost same as the even columns.
4. Change DAC_RAW again such that all pixels have
a non-zero output, but are as close to zero as
possible.
5. Repeat for different gains.
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Electronic Shutter Types
The IBIS5-1300 has two shutter types: a rolling (curtain)
shutter and a global shutter.
Rolling (Curtain) Shutter
The name is due to the fact that the effect is similar to a
curtain shutter of a SLR film camera. Although it is an
electronic operation, the shutter seems to slide over the
image. A rolling shutter is easy and elegant to implement in
a CMOS sensor. In the rolling shutter mode, there are two
Y-shift registers. One of them points to the row that is
currently being read out. The other shift register points to the
row that is currently being reset. Both pointers are shifted by
the same Y-clock and move over the focal plane. The
integration time is set by the delay between both pointers.
Figure 16 graphically displays the relative shift of the
integration times for different lines during the rolling shutter
operation. Each line is read and reset in a sequential way. The
integration time is the same for all lines, but is shifted in
time. You can vary the integration time through the
INT_TIME register (in number of lines)
This indicates that all pixels are light sensitive at another
period of time, and can cause some blurring if a fast moving
object is captured.
Figure 16. Rolling Shutter Operation
When the sensor is set to rolling shutter mode, make
certain to hold the input SS_START ans SS_STOP low.
Global Shutter
A global (also known as synchronous or snapshot) shutter
solves the inconvenience found in the rolling shutter. Light
integration takes place on all pixels in parallel, although
subsequent readout is sequential.
Figure 17 shows the integration and read out sequence for
the synchronous shutter. All pixels are light sensitive at the
same period of time. The whole pixel core is reset
simultaneously and after the integration time all pixel values
are sampled together on the storage node inside each pixel.
The pixel core is read out line by line after integration. Note
that the integration and read out cycle is carry-out in serial;
that causes that no integration is possible during read out
During synchronous shutter mode, the input pins
SS_START and SS_STOP are used to start and stop the
synchronous shutter.
Figure 17. Global Shutter Operation
Sequencer
Figure 8 on page 9 shows a number of control signals that
are needed to operate the sensor in a particular sub-sampling
mode with a certain integration time, output amplifier gain,
and so on. Most of these signals are generated on-chip by the
sequencer that uses only a few control signals. Make certain
that these control signals are generated by the external
system:
SYS_CLOCK (X-clock) defines the pixel rate
Y_START pulse indicates the start of a new frame read
out
Y_CLOCK selects a new row and starts the row
blanking sequence, including the synchronization and
loading of the X-register
SS_START and SS_STOP control the integration
period in snapshot shutter mode.
The relative position of the pulses is determined by a
number of data bits that are uploaded in internal registers
through the serial or parallel interface.
Internal Registers
Table 15 shows a list of the internal registers with a short
description. In the next section, the registers are explained
in more detail. On power-on, all registers in the sensor are
reset to zero. To start operating the sensor, first load all the
registers using the parallel or serial-3-wire interface. The
value to be loaded in each register on power-on is given in
the table.
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Table 15. INTERNAL REGISTERS
Register Bit Name Description
0 (0000) 11:0 SEQUENCER register Default value <11:0>: ‘000011000100’
0 SHUTTER_TYPE 1 = rolling shutter
0 = synchronous shutter
1 FRAME_CAL_MODE 0 = fast
1 = slow
2 LINE_CAL_MODE 0 = fast
1 = slow
3 CONT_CHARGE 1 = ‘Continuous’ precharge enabled
4 GRAN_X_SEQ_LSB Granularity of the X sequencer clock
5 GRAN_X_SEQ_MSB
6 GRAN_SS_SEQ_LSB Granularity of the SS sequencer clock
7 GRAN_SS_SEQ_MSB
8 KNEEPOINT_LSB Sets reset voltage for multiple slope operation
9 KNEEPOINT_MSB
10 KNEEPOINT_ENABLE 1 = Enables multiple slope operation in synchronous shutter mode
11 VDDR_RIGHT_EXT 1 = Disables circuit that generates VDDR_RIGHT voltage; this allows the applic-
ation of an external voltage
1 (0001) 11:0 NROF_PIXELS Number of pixels to count (maximum 1280/2)
Default value <11:0>: ‘001001111111
2 (0010) 11:0 NROF_LINES Number of lines to count
Default value <11:0>: ‘001111111111
3 (0011) 11:0 INT_TIME Integration time
Default value <11:0>: ‘111111111111
4 (0100) 10:0 X_REG X start position (maximum 1280/2)
Default value <10:0>: ‘00000000000’
5 (0101) 10:0 YL_REG Y-left start position
Default value <10:0>: ‘00000000000’
6 (0110) 10:0 YR_REG Y-right start position
Default value <10:0>: ‘00000000000’
7 (0111) 7:0 IMAGE CORE register Default value <7:0>: ‘00000000’
0 TEST_EVEN Test even columns
1 TEST_ODD Test odd columns
2 X_SUBSAMPLE Enable sub-sampling in X-direction
3 X_SWAP12 Swap columns 1-2, 5-6,
4 X_SWAP30 Swap columns 3-4, 7-8,
5 Y_SUBSAMPLE Enable sub-sampling in Y-direction
6 Y_SWAP12 Swap rows 1-2, 5-6,
7 Y_SWAP30 Swap rows 3-4, 7-8,
8 (1000) 6:0 AMPLIFIER register Default value <6:0>: ‘1010000’
0 GAIN<0> Output amplifier gain setting
1 GAIN<1>
2 GAIN<2>
3 GAIN<3>
4 UNITY 1 = Amplifier in unity gain mode
5 DUAL_OUT 1 = Activates second output
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Table 15. INTERNAL REGISTERS
8 (1000) 6 STANDBY 0 = Amplifier in standby mode
9 (1001) 6:0 DACRAW_REG Amplifier DAC raw offset
Default value <6:0>: ‘1000000’
10 (1010) 6:0 DACFINE_REG Amplifier DAC fine offset
Default value <6:0>: ‘1000000’
11 (1011) 2:0 ADC register Default value <2:0>: ‘011’
0 TRISTATE_OUT 0 = Output bus in tri-state
1 GAMMA 0 = Gamma-correction on
2 BIT_INV 1 = Bit inversion on output bus
12 (1100) Reserved
13 (1101) Reserved
14 (1110) Reserved
15 (1111) Reserved
Detailed Description of Internal Registers
Sequencer register (7:0)
1. Shutter type (bit 0)
The IBIS5-1300 image sensor has two shutter types:
0 = synchronous shutter
1 = rolling shutter
2. Output amplifier calibration (bits 1 and 2)
Bits FRAME_CAL_MODE and
LINE_CAL_MODE define the calibration mode of the
output amplifier.
During every row-blanking period, a calibration is
done of the output amplifier. There are two calibration
modes. The FAST mode (0) forces a calibration in one
cycle but is not so accurate and suffers from KTC noise.
The SLOW mode (1) only makes incremental
adjustments and is noise free.
Approximately 200 or more slow calibrations
have the same effect as one fast calibration.
Different calibration modes are set at the beginning of
the frame (FRAME_CAL_MODE bit) and for every
subsequent line that is read (LINE_CAL_MODE bit).
The Y_START input defines the beginning of a frame,
Y_CLOCK defines the beginning of a new row.
3. Continuous charge (bit 3)
Some applications may require the use continuous
charging of the pixel columns instead of a pre-charge on
every line sample operation.
Setting bit CONT_CHARGE to ‘1’ activates this
function. The resistor connected to pin PC_CMD
controls the current level on every pixel column.
4. Internal clock granularities (bits 4, 5, 6 and 7)
The system clock is divided several times on-chip.
Half the system clock rate clocks the X-shift-register
that controls the column/pixel readout. Odd and even
pixel columns are switched to two separate buses. In the
output amplifier, the pixel signals on the two buses are
combined into one pixel stream at the same frequency
as SYS_CLOCK.
Use the bits GRAN_SS_SEQ_MSB (bit 7) and
GRAN_SS_SEQ_LSB (bit 6) to program the clock that
drives the ‘snapshot’ or synchronous shutter sequencer.
This way the integration time in synchronous shutter
mode is a multiple of 32, 64, 128, or 256 times the
system clock period. To overcome global reset issues,
use the longest SS granularity (bits 6 and 7 set to ‘1’).
Table 16. SS SEQUENCER CLOCK GRANULARITIES
GRAN_SS_SEQ_MSB/
LSB
SS-Sequencer Clock Integration
Time Step[1]
00 32 x SYS_CLOCK 800 ns
01 64 x SYS_CLOCK 1.6 ms
10 128 x SYS_CLOCK 3.2 ms
11 256 x SYS_CLOCK 6.4 ms
1. Using a SYS_CLOCK of 40 MHz (25 ns period).
The clock that drives the X-sequencer is a multiple of 4,
8, 16, or 32 times the system clock. Clocking the
X-sequencer at a slower rate (longer row blanking time;
pixel read out speed is always equal to the
SYSTEM_CLOCK) results in more signal swing for the
same light conditions.
Table 17. X SEQUENCER CLOCK GRANULARITIES
GRAN_X_SEQ_MSB/
LSB
X-Sequencer Clock Integration
Time Step[1]
00 4 x SYS_CLOCK 100 ns
01 8 x SYS_CLOCK 200 ns
10 16 x SYS_CLOCK 400 ns
11 32 x SYS_CLOCK 800 ns
1. Using a SYS_CLOCK of 40 MHz (25 ns period).
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5. Pixel reset knee-point for multiple slope operation
(bits 8, 9, and 10)
In normal (single slope) mode the pixel reset is
controlled from the left side of the image core using the
voltage applied on pin VDDR_LEFT as pixel reset
voltage. In multiple slope operation, apply one or more
variable pixel reset voltages.
Bits KNEE_POINT_MSB and KNEE_POINT_LSB
select the on chip-generated pixel reset voltage.
Bit KNEE_POINT_ENABLE set to 1 switches
control to the right side of the image core so the pixel
reset voltage (VDDR_RIGHT), selected by bits
KNEE_POINT_MSB/LSB, is used.
Use bit KNEE_POINT_ENABLE only for multiple
slope operation in synchronous shutter mode. In rolling
shutter mode, use only the bits
KNEE_POINT_MSB/LSB to select the second
knee-point in dual slope operation. The actual
knee-point depends on VDDH, VDDR_LEFT and
VDDC applied to the sensor.
Table 18. MULTIPLE SLOPE REGISTER SETTINGS
KNEE_POINT Pixel Reset Voltage
(V)VDDR_RIGHT
Knee-point
(V)
MSB/LSB ENABLE
00 0 or 1 VDDR_LEFT 0
01 1 VDDR_LEFT – 0.76 + 0.76
10 1 VDDR_LEFT – 1.52 + 1.52
11 1VDDR_LEFT – 2.28 + 2.28
6. External Pixel Reset Voltage for Multiple Slope (bit
11)
Setting bit VDDR_RIGHT_EXT to ‘1’ disables the
circuit that generates the variable pixel reset voltage and
uses the voltage externally applied to pin
VDDR_RIGHT as the double/multiple slope reset
voltage.
Setting bit VDDR_RIGHT_EXT to ‘0’ allows you to
monitor the variable pixel reset voltage (used for
multiple slope operation) on pin VDDR_RIGHT.
NROF_PIXELS Register (11:0)
After the internal x_sync is generated (start of the pixel
readout of a particular row), the PIXEL_VALID signal goes
high. The PIXEL_VALID signal goes low when the pixel
counter reaches the value loaded in the NROF_PIXEL
register. Due to the fact that two pixels are read at the same
clock cycle, you must divide this number by 2
(NROF_PIXELS = (width of ROI / 2) – 1).
ROF_LINES Register (11:0)
After the internal yl_sync is generated (start of the frame
readout with Y_START), the line counter increases with
each Y_CLOCK pulse until it reaches the value loaded in the
NROF_LINES register and generates a LAST_LINE pulse.
It must be noted that the value loaded in the register must be
(Number of lines required - 1).
INT_TIME Register (11:0)
Use the INT_TIME register to set the integration time of
the electronic shutter. The interpretation of the INT_TIME
depends on the chosen shutter type (rolling or synchronous).
Global shutter
After the SS_START pulse is applied an internal counter
counts the number of SS granulated clock cycles until it
reaches the value loaded in the INT_TIME register and
generates a TIME_OUT pulse. Use this TIME_OUT pulse
to generate the SS_STOP pulse to stop the integration. When
the INT_TIME register is used, the maximum integration
time is:
TINT_MAX =
[4095 * 256 (max granularity) * (40 MHz) –1] = 26.2 ms.
You can increase this maximum time if you use an external
counter to trigger SS_STOP. Ten is the minimal value that
you can load into the INT_TIME register (see also Internal
clock granularities (bits 4, 5, 6 and 7) on page 17).
Rolling shutter
When the Y_START pulse is applied (start of the frame
readout), the sequencer generates the yl_sync pulse for the
left Y-shift register (read out Y-shift register). This loads the
left Y-shift register with the pointer loaded in YL_REG
register. At each Y_CLOCK pulse, the pointer shifts to the
next row and the integration time counter increases until it
reaches the value loaded in the INT_TIME register. At that
moment, the sequencer generates the yr_sync pulse for the
right Y-shift register; it loads the right Y-shift register (reset
Y-shift register) with the pointer loaded in YR_REG register
(see Figure 18). The integration time counter is reset when
the sync for the left Y-shift register, yl_sync is asserted. Both
shift registers keep moving until the next sync is asserted,
i.e., the yl_sync for the left Y-shift register (generated by
Y_START) and the yr_sync for the right Y-shift register
(generated when the integration time counter reaches the
INT_TIME value).
Treg_int Difference between the left and right pointer =
value set in the INT_TIME register (number of lines).
The actual integration time is given by
Tint Integration time [# lines] =
NROF_LINES register – INT_TIME register.
Tint Integration time [# lines] =
NROF_LINES register – INT_TIME register.
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Figure 18. Synchronization of Shift Registers in Rolling Shutter Mode
Line n Treg_int
Last line, followed by
sync of left shift-register
Tint
Sync
Sync of right shift-registerSync of left shift-register
X_REG Register (10:0)
The X_REG register determines the start position of the
window in the X-direction. In this direction, there are 640
possible starting positions (two pixels are addressed at the
same time in one clock cycle). If sub sampling is enabled,
only the even pixels are set as starting position (for instance:
0, 2, 4, 6, 8 638).
YL_REG (10:0) and YR_REG (10:0)
The YL_REG and YR_REG registers determine the start
position of the window in the Y-direction. In this direction,
there are 1024 possible starting positions. In rolling shutter
mode the YL_REG register sets the start position of the read
(left) pointer and the YR_REG sets the start position of the
reset (right) pointer. For both shutter types YL_REG is
always equal to YR_REG.
Image Core Register (7:0)
Bits 1:0 of the IMAGE_CORE register define the test
mode of the image core. Setting 00 is the default and normal
operation mode. In case the bit is set to ‘1’, the odd (bit 1)
or even (bit 0) columns are tight to the reset level. If the
internal ADC is used, bits 0 and 1 are used to create test
pattern to test the sample moment of the ADC. If the ADC
sample moment is not chosen correctly, the created test
pattern is not black-white-black-etc. (IMAGE_CORE
register set at 1 or 2) or
black-black-white-white-black-black (IMAGE_CORE
register set at 9) but grey shadings if the sensor is saturated.
Bits 7:2 of the IMAGE_CORE register define the
sub-sampling mode in the X-direction (bits 4:2) and in the
Y-direction (bits 7:5). The sub-sampling modes and
corresponding bit setting are given in Table 11 and Table 12
on page 11.
Amplifier Register (6:0)
1. GAIN (bits 3:0)
The gain bits determine the gain setting of the output
amplifier. They are only effective if UNITY = 0. The
gains and corresponding bit setting are given in
Table 13 on page 12.
2. UNITY (bit 4)
In case UNITY = 1, the gain setting of GAIN is
bypassed and the gain amplifier is put in unity feedback.
3. DUAL_OUT (bit 5)
If DUAL_OUT = 1, the two output amplifiers are
active. If DUAL_OUT = 0, the signals from the two
buses are multiplexed to output PXL_OUT1 which
connects to ADC_IN. The gain amplifier and output
driver of the second path are put in standby.
4. STANDBY
If STANDBY = 0, the complete output amplifier is
put in standby. For normal use, set STANDBY to ‘1’.
DAC_RAW Register (6:0) and DAC_FINE (6:0)
Register
These registers determine the black reference level at the
output of the output amplifier. Bit setting 1111111 for the
DAC_RAW register gives the highest offset voltage. Bit
setting 0000000 for the DAC_RAW register gives the lowest
offset voltage. Ideally, if the two output paths have no offset
mismatch, the DAC_FINE register is set to 1000000.
Deviation from this value is used to compensate the internal
mismatch (see Output Amplifier on page 12).
ADC Register (2:0)
1. TRISTATE_OUT (bit 0)
In case TRISTATE = 0, the ADC_D<9:0> outputs are
in tri-state mode. TRISTATE = 1 for normal operation
mode.
2. GAMMA (bit 1)
If GAMMA is set to ‘1’, the ADC input to output
conversion is linear; otherwise the conversion follows
a ‘gamma’ law (more contrast in dark parts of the
window, lower contrast in the bright parts).
3. BIT_INV (bit 2)
If BIT_INV = 1, 0000000000 is the conversion of the
lowest possible input voltage, otherwise the bits are
inverted.
Data Interfaces
Two different data interfaces are implemented. They are
selected using pins IF_MODE (pin 12) and SER_MODE
(pin 6).
Table 19. SERIAL AND PARALLEL INTERFACE
SELECTION
IF_MODE SER_MODE Selected interface
1 X Parallel
0 1 Serial 3 Wire
Parallel Interface
The parallel interface uses a 16-bit parallel input
(P_DATA (15:0)) to upload new register values. Asserting
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P_WRITE loads the parallel data into the internal register of
the IBIS5-1300 where it is decoded (see Figure 19).
P_DATA (15:12) address bits REG_ADDR (3:0); P_DATA
(11:0) data bits REG_DATA (11:0).
Serial 3-Wire Interface
The serial 3-wire interface (or serial-to-parallel Interface)
uses a serial input to shift the data in the register buffer.
When the complete data word is shifted into the register
buffer the data word is loaded into the internal register where
it is decoded (see Figure 19). S_DATA (15:12) address bits
REG_ADDR (3:0); S_DATA (11:0) data bits REG_DATA
(11:0). When S_EN is asserted the parallel data is loaded
into the internal registers of the sensor. The maximum tested
frequency of S_DATA is 2.5 MHz.) The serial 2-wire
interface is not operational in the IBIS5-1300 image sensor.
Use the 3-wire SPI interface to load the sensor registers.
Figure 19. Parallel Interface Timing
TIMING DIAGRAMS
Frame Rate
The pixel rate for this sensor is high enough to support a
frame rate of greater than 100 Hz for a window size of
640 x 480 pixels (VGA format). Considering a row
blanking time of 3.5 ms (as baseline, see also Internal clock
granularities (bits 4, 5, 6 and 7) on page 17), this requires a
minimum pixel rate of nearly 40 MHz. The final bandwidth
of the column amplifiers, output stage, and others is
determined by external bias resistors. With a nominal pixel
rate of 40 MHz, a full frame rate of a little more than 27
frames per second is obtained.
The frame period of the IBIS5-1300 sensor depends on the
shutter type.
Rolling Shutter
=> Frame period = (Nr. Lines * (RBT + pixel period * Nr.
Pixels))
with:
Nr. Lines Number of lines read out each frame (Y)
Nr. Pixels Number of pixels read out each line (X)
RBT Row blanking time = 3.5 ms (typical)
Pixel period 1/40 MHz = 25 ns
Example Read out time of the full resolution at nominal
speed (40 MHz pixel rate):
Frame period = (1024 * (3.5 ms + 25 ns * 1280)) = 36.4 ms
= 27.5 fps
Global shutter
Frame period = Tint + Tread out
= Tint + (Nr. Lines * (RBT + pixel period * Nr. Pixels))
with: Tint Integration (exposure) time
Nr. Lines Number of lines read out each frame (Y)
Nr. Pixels Number of pixels read out each line (X)
RBT Row blanking time = 3.5 ms (typical)
Pixel period 1/40 MHz = 25 ns
Example Read out time of the full resolution at nominal
speed (40 MHz pixel rate) with an integration time of 1 ms:
Frame period = 1 ms + (1024 * (3.5 ms + 25 ns * 1280))
= 37.4 ms = 26.8 fps
Region-of-Interest (ROI) Read Out
Windowing is easily achieved by uploading the starting
point of the X- and Y-shift registers in the sensor registers
using the various interfaces. This downloaded starting point
initiates the shift register in the X- and Y-direction triggered
by the Y_START (initiates the Y-shift register) and the
Y_CLK (initiates the X-shift register) pulse. The minimum
step size for the x-address is two (only even start addresses
are chosen) and one for the Y-address (every line is
addressable). The frame rate increases almost linearly when
fewer pixels are read out. Table 20 gives an overview of the
achievable frame rates (in rolling shutter mode) with various
ROI dimensions.
Table 20. FRAME RATE VS. RESOLUTION
Image
Resolution
(X x Y)
Frame Rate
[frames/s]
Frame
Readout Time
[ms]
Comment
1280 x 1024 27 36 Full resolution.
640 x 480 100 10 ROI read out.
100 x 100 1657 0.6 ROI read out.
Timing Requirements
There are six control signals that operate the image sensor:
SS_START
SS_STOP
Y_CLOCK
Y_START
X_LOAD
SYS_CLOCK
The external system generates these control signals with
following time constraints to SYS_CLOCK (rising edge =
active edge):
TSETUP >7.5 ns
THOLD > 7.5 ns
It is important that these signals are free of any glitches.
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Figure 20 shows a recommended schematic for generating the basic signals and to avoid any timing problems.
Figure 20. Recommended Schematic for Basic Signals
FF
SYS_CLOCK_N
SYS_CLOCK
SS_START
SS_STOP
Y_CLOCK
Y_START
X_LOAD
Figure 21. Relative Timing of 5Sequencer Control Signal
Global Shutter: Single Slope Integration
SS_START and SS_STOP must change on the falling
edge of the SYS_CLOCK (Tsetup and Thold > 7.5 ns). Make
certain that the pulse width of both signals is a minimum of
1 SYS_CLOCK cycle. As long as SS_START or SS_STOP
are asserted, the sequencer stays in a suspended state (see
Figure 22).
T1 - Time counted by the integration timer until the value
of INT_TIME register is reached. The integration timer is
clocked by the granulated SS-sequencer clock.
T2 - TIME_OUT signal stays high for one granulated
SS-sequencer clock period.
T3 - There are no constraints for this time. Use the
TIME_OUT signal to trigger the SS_STOP pin (or use an
external counter to trigger SS_STOP); you cannot tie both
signals together.
T4 - During this time, the SS-sequencer applies the control
signals to reset the image core and start integration. This
takes four granulated SS-sequencer clock periods. The
integration time counter starts counting at the first rising
edge after the falling edge of SS_START.
T5 - The SS-sequencer puts the image core in a readable
state. It takes two granulated SS-sequencer clock periods.
Tint - The ‘real’ integration or exposure time.
Figure 22. Global Shutter: Single Slope Integration
Global Shutter: Pixel Readout
Basic Operation
Y_START and Y_CLOCK must change on the falling
edge of the SYS_CLOCK (Tsetup and Thold > 7.5 ns). Make
certain that the pulse width is a minimum of one clock cycle
for Y_CLOCK and three clock cycles for Y_START. As
long as Y_CLOCK is applied, the sequencer stays in a
suspended state. (See Figure 23)
T1- Row blanking time: During this period, the
X-sequencer generates the control signals to sample the
pixel signal and pixel reset levels (double sampling
fpn-correction), and starts the readout of one line. The row
blanking time depends on the granularity of the X-sequencer
clock (see Table 21 on page 22).
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T2 - Pixels counted by pixel counter until the value of
NROF_PIXELS register is reached. PIXEL_VALID goes
high when the internal X_SYNC signal is generated, in other
words when the readout of the pixels is started.
PIXEL_VALID goes low when the pixel counter reaches the
value loaded in the NROF_PIXELS register (after a
complete row read out).
T3 - LAST_LINE goes high when the line counter reaches
the value loaded in the NROF_LINES register and stays
high for one line period (until the next falling edge of
Y-CLOCK).
On Y_START the left Y-shift-register of the image core is
loaded with the YL-pointer that is loaded in to register
YL_REG.
Advanced Operation:
It was observed during characterization of the IBIS5-1300
image sensor that there are column non-uniformities in the
image in synchronous shutter mode, when the Y-readout
pointer is still selecting a line during the global reset for the
next frame. To avoid this problem, an advanced timing has
been generated for the synchronous shutter mode. See
question 12 in AN6004, Frequently Asked Questions about
the IBIS5 Device for more information. The application
note discusses the cause and corrective action for this
problem.
Figure 23. Global Shutter: Pixel Read Out
Pixel Output
The pixel signal at the PXL_OUT1 output becomes valid
after five SYS_CLOCK cycles when the internal X_SYNC
(start of PIXEL_VALID output or external X_LOAD pulse)
pulse is asserted (see Figure 24).
T1 - Row blanking time (see Table 21).
T2 - 5 SYS_CLOCK cycles.
T3 - Time for new X-pointer position upload in X_REG
register (see Windowing in XDirection on page 24 for more
details).
Table 21. ROW BLANKING TIME AS FUNCTION OF
XSEQUENCER GRANULARITY
Granularity
NGRAN
T1(ms)
= 35 x NGRAN x TSYS_CLOCK
GRAN_X_SEQ
MSB/LSB
x 4 140 x TSYS_CLOCK = 3.5 00
x 8 280 x TSYS_CLOCK = 7.0 01
x 16 560 x TSYS_CLOCK = 14.0 10
x 32 1120 x TSYS_CLOCK = 28.0 11
Figure 24. Pixel Output
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Global Shutter: Multiple Slope Integration
Figure 25. Multiple Slope Integration
Use up to four different pixel reset voltages during
multiple slope operation in synchronous shutter mode. This
is done by uploading new values to register bits
KNEEPOINT_MSB/LSB/ENABLE before a new
SS_START pulse is applied.
Set bit KNEEPOINT_ENABLE high to do a pixel reset
with a lower voltage.
Set bits KNEEPOINT_MSB/LSB/ENABLE back to ‘0’
before the SS_STOP pulse is applied. Every time an
SS_START pulse is applied, the integration time counter is
reset.
The TIME_OUT signal cannot be used in multi-slope
operation to determine the location of the next SS_START
or SS_STOP pulse. External counters must be used for
generating these signals.
Table 22. MULTIPLE SLOPE REGISTER SETTINGS
Kneepoint
MSB/LSB Enable
Initial Setup 00 0
1st Register Upload 01 1
2nd Register Upload 10 1
3th Register Upload 11 1
4th Register Upload 00 0
Upload the register after time Tstable, otherwise, the
change affects the SS-sequencer resulting in a bad pixel
reset. Tstable depends on the granularity of the SS-sequencer
clock (see Table 23).
Table 23. Tstable FOR DIFFERENT GRANULARITY
SETTINGS
Granularity
NGRAN
Tstable (ms)
= 5 x NGRAN x TSYS_CLOCK
GRAN_SS_SEQ
MSB/LSB
x 32 160 x TSYS_CLOCK = 4 00
x 64 320 x TSYS_CLOCK = 8 01
x 128 640 x TSYS_CLOCK = 16 10
x 256 1280 x TSYS_CLOCK = 32 11
Tupload depends on the interface mode used to upload the
registers.
Table 24. Tupload FOR DIFFERENT INTERFACE
MODES
Interface Mode Tupload (ms)
Parallel 1
Serial 3-wire 8
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Rolling Shutter Operation
The integration of the light in the image sensor is done
during readout of the other lines.
The only difference with synchronous shutter is that the
TIME_OUT pin is used to indicate when the Y_SYNC pulse
for the right Y-shift-register (reset Y-shift register) is
generated. This loads the right Y-shift-register with the
pointer loaded in register YR_REG. The Y_SYNC pulse for
the left Y-shift register (read Y-shift register) is generated
with Y_START.
The INT_TIME register defines how many lines to count
before the Y_SYNC of the right Y-shift-register is
generated, hence defining the integration time. See also
INT_TIME Register (11:0) on page 18 for a detailed
description of the rolling shutter operation.
Tint Integration time [# lines] = register(NROF_LINES)
– register(INT_TIME)
NOTE: For normal operation the values of the YL_REG
and YR_REG registers are equal.
Windowing in X-Direction
An X_LOAD pulse overrides the internal X_SYNC
signal, loading a new X-pointer (stored in the X_REG
register) into the X-shift-register.
The X_LOAD pulse must appear on the falling edge of
SYS_CLOCK and remain high for two SYS_CLOCK
cycles overlapping two rising edges of SYS_CLOCK. The
new X-pointer is loaded on one of the two rising edges of
SYS_CLOCK.
The available time to upload the register is Tload; it is
defined from the previous register load to the rising edge of
X_LOAD. It depends on the settling time of the register and
the X-decoder.
Table 25. Tload FOR DIFFERENT INTERFACES
Interface Mode Tload (ms)
Parallel interface 1 (about 40 SYS_CLOCK cycles)
Serial 3 Wire 16 (at 2.5 MHz data rate)
The actual time to load the register itself depends on the
interface mode that is used. The parallel interface is the
fastest.
Figure 26. Rolling Shutter Operation
Figure 27. Windowing in XDirection
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Windowing in Y-Direction
Reapply the Y_START pulse after loading a new
Y-pointer value into the YL_REG and YR_REG registers to
load a new Y-pointer into the Y-shift-register.
Every time a Y_START pulse appears, a frame calibration
of the output amplifier occurs.
Initialization (Startup Behavior)
To avoid any high current consumption at startup, apply
the SYS_CLOCK signal as soon as possible after or even
before power on of the image sensor. After power on, apply
SYS_RESET for a minimum of five SYS_CLOCK periods
to ensure a proper reset of the on-chip sequencer and timing
circuitry. All internal registers are set to ‘0’ after
SYS_RESET is applied.
Because all the IBIS5-1300 control signals are active
high, apply a low level (before SYS_RESET occurs) to these
pins at start up to avoid latch up.
Figure 28. Windowing in YDirection
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PACKAGE INFORMATION
Pin List
The IBIS5-1300 image sensor has 84 pins and is packaged in a leadless ceramic carrier (LCC) package. Table 26 lists the
pins and their functions.
Table 26. PIN LIST (Notes 1, 2 and 3)
Pin Pin Name Pin Type Pin Description
1 P_DATA<8> Input Digital input. Data parallel interface.
2 P_WR Input Digital input (active high). Parallel write.
3 S_CLK Input Digital input. Clock signal of serial interface.
4 S_DATA Input Digital input/output. Data of serial interface.
5 S_EN Input Digital input (active low). Enable of serial 3-wire interface.
6 SER_MODE Input Digital input. Serial mode enable (1 = Enable serial 3-wire).
7 VDDC Supply Analog supply voltage. Supply voltage of the pixel core [3.3 V].
8 VDDA Supply Analog supply voltage. Analog supply voltage of the image sensor [3.3 V].
9 GNDA Ground Analog ground. Analog ground of the image sensor.
10 GNDD Ground Digital ground. Digital ground of the image sensor.
11 VDDD Supply Digital supply voltage. Digital supply voltage of the image sensor [3.3 V].
12 IF_MODE Input Digital input. Interface mode (1 = parallel; 0 = serial).
13 DEC_CMD Input Analog input. Biasing of decoder stage. Connect to VDDA with R = 50 kW and decouple with
C = 100 nF to GNDA.
14 Y_START Input Digital input (active high). Start frame read out.
15 Y_CLOCK Input Digital input (active high). Line clock.
16 LAST_LINE Output Digital output. Generates a high level when the last line is read out.
17 X_LOAD Input Digital input (active high). Loads new X-position during read out.
18 SYS_CLOCK Input Digital input. System (pixel) clock (40 MHz).
19 PXL_VALID Output Digital output. Generates high level during pixel read out.
20 SS_START Input Digital input (active high). Start synchronous shutter operation.
21 SS_STOP Input Digital input (active high). Stop synchronous shutter operation.
22 TIME_OUT Output Digital output.
Global shutter: pulse when timeout reached. It is used to trigger SS_STOP; do not tie both signals
together.
Rolling shutter: pulse when second Y-sync appears.
23 SYS_RESET Input Digital input (active high). Global system reset.
24 EL_BLACK Input Digital input (active high). Enables electrical black in output amplifier.
25 EOSX Output Digital output. Diagnostic end-of-scan of X-register.
26 DAC_VHIGH Input Analog reference input. Biasing of DAC for output dark level. Use this to set the output range of
DAC.
Default: Connect to VDDA with R = 0 W.
27 DAC_VLOW Input Analog reference input. Biasing of DAC for output dark level. Use this to set the output range of
DAC.
Default: Connect to GND A with R = 0 W.
28 PXL_OUT1 Output Analog output. Analog pixel output 1.
29 PXL_OUT2 Output Analog output. Analog pixel output 2. Leave not connected if not used.
30 AMP_CMD Input Analog input. Biasing of the output amplifier. Connect to VDDA with R = 50 kW and decouple with
C = 100 nF to GNDA.
1. All pins with the same name can be connected together.
2. All digital input are active high (unless mentioned otherwise).
3. Tie all digital inputs that are not used to GND (inactive level).
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Table 26. PIN LIST (Notes 1, 2 and 3)
Pin Pin DescriptionPin TypePin Name
31 COL_CMD Input Analog input. Biasing of the column amplifiers. Connect to VDDA with R = 50 kW and decouple
with C = 100 nF to GNDA.
32 PC_CMD Input Analog input. Pre-charge bias. Connect to VDDA with R = 25 kW and decouple with C = 100 nF to
GNDA.
33 VDDD Supply Digital supply. Digital supply voltage of the image sensor [3.3 V].
34 GNDD Ground Digital ground. Digital ground of the image sensor.
35 GNDA Ground Analog ground. Analog ground of the image sensor.
36 VDDA Supply Analog supply voltage. Analog supply voltage of the image sensor [3.3 V].
37 VDDC Supply Analog supply voltage. Supply voltage of the pixel core [3.3 V].
38 P_DATA<0> Input Digital input. Data parallel interface (LSB).
39 P_DATA<1> Input Digital input. Data parallel interface.
40 P_DATA<2> Input Digital input. Data parallel interface.
41 P_DATA<3> Input Digital input. Data parallel interface.
42 P_DATA<4> Input Digital input. Data parallel interface.
43 P_DATA<5> Input Digital input. Data parallel interface.
44 P_DATA<6> Input Digital input. Data parallel interface.
45 P_DATA<7> Input Digital input. Data parallel interface.
46 SI2_ADDR<0> Input Digital Input. Connect to GNDD.
47 SI2_ADDR<1> Input Digital Input. Connect to GNDD.
48 SI2_ADDR<2> Input Digital Input. Connect to GNDD.
49 SI2_ADDR<3> Input Digital Input. Connect to GNDD.
50 SI2_ADDR<4> Input Digital Input. Connect to GNDD.
51 GNDAB Supply Analog supply voltage. Anti-blooming ground.
52 VDDR_RIGHT Supply Analog supply voltage. Variable reset voltage (multiple slope operation). Decouple with 1 mF to
GNDA.
53 ADC_VLOW Input Analog reference input. ADC low reference voltage. Default: Connect to GNDA with R = 1200 W
and decouple with C = 100 nF to GNDA.
54 ADC_GNDA Ground Analog ground. ADC analog ground.
55 ADC_VDDA Supply Analog supply voltage. ADC analog supply voltage [3.3 V].
56 ADC_GNDD Ground Digital ground. ADC digital ground.
57 ADC_VDDD Supply Digital supply voltage. ADC digital supply voltage [3.3 V].
58 ADC_CLOCK Input Digital input. ADC clock (40 MHz).
59 ADC_OUT<9> Output Digital output. ADC data output (MSB).
60 ADC_OUT<8> Output Digital output. ADC data output.
61 ADC_OUT<7> Output Digital output. ADC data output.
62 ADC_OUT<6> Output Digital output. ADC data output.
63 ADC_OUT<5> Output Digital output. ADC data output.
64 ADC_OUT<4> Output Digital output. ADC data output.
65 ADC_OUT<3> Output Digital output. ADC data output.
66 ADC_OUT<2> Output Digital output. ADC data output.
67 ADC_OUT<1> Output Digital output. ADC data output.
1. All pins with the same name can be connected together.
2. All digital input are active high (unless mentioned otherwise).
3. Tie all digital inputs that are not used to GND (inactive level).
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Table 26. PIN LIST (Notes 1, 2 and 3)
Pin Pin DescriptionPin TypePin Name
68 ADC_OUT<0> Output Digital output. ADC data output (LSB).
69 ADC_IN Input Analog input. ADC analog input.
70 ADC_CMD Input Analog input. Biasing of the input stage of the ADC. Connect to ADC_VDDA with R = 50 kW and
decouple with C = 100 nF to ADC_GNDA.
71 ADC_VDDD Supply Digital supply voltage. ADC digital supply voltage [3.3 V].
72 ADC_GNDA Ground Analog ground. ADC analog ground.
73 ADC_GNDD Ground Digital ground. ADC digital ground.
74 ADC_VDDA Supply Analog supply voltage. ADC analog supply voltage [3.3 V].
75 ADC_VHIGH Input Analog reference input. ADC high reference volt age.Default: Connect to VDDA with R = 360 W
and decouple with C = 100 nF to GNDA.
76 VDDR_LEFT Supply Analog supply voltage. High reset level [4.5 V].
77 VDDH Supply Analog supply voltage. High supply voltage for HOLD switches in the image core [4.5 V]
78 P_DATA<15> Input Digital input. Data parallel interface (MSB).
79 P_DATA<14> Input Digital input. Data parallel interface.
80 P_DATA<13> Input Digital input. Data parallel interface.
81 P_DATA<12> Input Digital input. Data parallel interface.
82 P_DATA<11> Input Digital input. Data parallel interface.
83 P_DATA<10> Input Digital input. Data parallel interface.
84 P_DATA<9> Input Digital input. Data parallel interface.
1. All pins with the same name can be connected together.
2. All digital input are active high (unless mentioned otherwise).
3. Tie all digital inputs that are not used to GND (inactive level).
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Pad Position and Packaging
Bare Die
The IBIS5-1300 image sensor has 84 pins, 21 pins on
every edge. The die size from pad-edge to pad-edge (without
scribe-line) is: 10156.5 mm (x) by 9297.25 mm (y). Scribe
lines take about 100 to 150 mm extra on each side. Pin 1 is
located in the middle of the left side, indicated by a ‘1’ on the
layout. A logo and some identification tags are on the top
right of the die.
IdentificationTest structure
Figure 29. IBIS51300 Bare Die Dimensions (All dimensions in mm)
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Package Drawing with Glass
LCC84, 15.24x15.24
CASE 115AS01
ISSUE O
XXXXX = Specific Device Code
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
GENERIC
MARKING DIAGRAM
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Table 27. MECHANICAL SPECIFICATIONS (see Package Drawing with Glass on page 30)
Parameters Description Min Typ Max Units
Die (with Pin 1 to the left
center, Top View)
Pixel (0,0) is bottom left
Die thickness NA 0.740 NA mm
Die center, X offset to the center of package –50 0 50 mm
Die center, Y offset to the center of the package –50 0 50 mm
Die position, X tilt to the Die Attach Plane N/A 1 N/A deg
Die position, Y tilt to the Die Attach Plane N/A 1 N/A deg
Die placement accuracy (referenced to die scribe and lead fingers
on package on all four sides)
–50 0 50 mm
Die rotation accuracy –1 1 deg
Distance from PCB plane to top of the die surface 1.26 mm
Distance from top of the die surface to top of the glass lid 1.69 mm
Glass lid specifications XY size 15 x 15 mm
Thickness 0.5 0.55 0.6 mm
Spectral range for optical coating of window 400 1000 nm
Reflection coefficient for window (refer to Figure 31) <0.8 %
Mechanical shock JESD22-B104C; Condition G 2000 G
Vibration JESD22-B103B; Condition 1 20 2000 Hz
Mounting profile Reflow profile according to J-STD-020D.1 260 °C
Figure 30. Side View Dimensions
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Glass Lid
The IBIS5-1300 image sensor uses a glass lid without any
coatings. Figure 31 shows the transmission characteristics
of the glass lid. As seen in Figure 31, the sensor does not use
infrared attenuating color filter glass. Provide a filter in the
optical path when using color devices.
Figure 31. Transmission Characteristics of Glass Lid
HANDLING PRECAUTIONS
For proper handling and storage conditions, refer to the
ON Semiconductor application note AN52561.
Information on Pb-Free Soldering
IBIS5-1300 product was tested successfully for Pb-free
soldering processes, using a reflow temperature profile with
maximum 260°C, minimum 40 s at 255°C and minimum
90 s at 217°C.
LIMITED WARRANTY
ON Semiconductor Image Sensor Business Unit warrants
that the image sensor products to be delivered hereunder, if
properly used and serviced, will conform to Sellers
published specifications and will be free from defects in
material and workmanship for two (2) years following the
date of shipment. If a defect were to manifest itself within
two (2) year period from the sale date, ON Semiconductor
will either replace the product or give credit for the product.
Return Material Authorization (RMA)
ON Semiconductor packages all of its image sensor
products in a clean room environment under strict handling
procedures and ships all image sensor products in ESD-safe,
clean-room-approved shipping containers. Products
returned to ON Semiconductor for failure analysis should be
handled under these same conditions and packed in its
original packing materials, or the customer may be liable for
the product.
RoHS (Pb-free) Compliance
This paragraph reports the use of hazardous chemical
substances as required by the RoHS Directive (excluding
packing material).
Lead, Cadmium, Mercury Hexavalent Chromium, PBB
(Polybrominated biphenyls), PBDE (Polybrominated
diphenyl ethers), noted as ‘intentional content’: is not
available in the IBIS5-1300.
NOTE: ‘Intentional content’ is defined as any material
demanding special attention that is allowed into
the product as follows:
A chemical composition is added into the inquired
product intentionally to produce and maintain the
required performance and function of the product.
A chemical composition which is used intentionally in
the manufacturing process, that is allowed into the
product.
The following case is not treated as ‘intentional content’:
The above material is contained as an impurity into raw
materials or parts of the intended product. The impurity
is defined as a substance that cannot be removed
industrially, or it is produced using a process such as
chemical composing or reaction, and it cannot be
removed technically.
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ACCEPTANCE CRITERIA SPECIFICATION
The Product Acceptance Criteria is available on request. This document contains the criteria to which the IBIS5-1300 is
tested before being shipped.
ORDERING CODE DEFINITION
O = Opto
N = ON Semiconductor
IBIS5
M=Mono, C=Color
Q= LCC package
Commercial Temperature Range
1300MQ
S = Standard Process
F= Thicker epitaxial
1.3 MP Resolution
Additional Functionality
D= 263 Glass, W=Windowless
I
I = Im age Sensors
NO I5S ADC
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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