2MBI300N-120-01 IGBT Module 1200V / 300A 2 in one-package Features * VCE(sat) classified for easy parallel connection * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Unit Rating V 1200 V VGES 20 A IC 300 A IC pulse 600 A -I C 300 A -IC pulse 600 W PC 2100 C Tj +150 C Tstg -40 to +125 V Vis AC 2500 (1min.) N*m Mounting *1 3.5 N*m Terminals *2 4.5 G1 Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF t rr n o c s Di - - 4.5 - - - - - - - - - - - - - - 48000 17400 15480 - 0.25 - 0.35 - - Rank F A B C D E d Lenge 2.25 to 2.50V 2.40 to 2.65V 2.55 to 2.80V 2.70 to 2.95V 2.85 to 3.10V 3.00 to 3.30V . t c u d o r p Conditions Ic = 300A VGE = 15V Tj = 25C Conditions Unit V GE =0V, V CE =1200V V CE =0V, V GE =20V V CE =20V, I C=300mA V GE=15V, I C=300A V GE =0V V CE =10V f=1MHz V CC =600V I C =300A V GE =15V R G =2.7ohm I F=300A, VGE=0V I F =300A mA A V V pF Max. 3.0 45 7.5 3.3 - - - 1.2 0.6 1.5 0.5 3.0 0.35 s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. - - - - - 0.0167 Conditions Unit Max. 0.06 0.15 - IGBT Diode the base to cooling fin * : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ E2 VCE(sat) classification e u n i t Characteristics Min. Typ. E1 G2 Current control circuit Electrical characteristics (at Tj=25C unless otherwise specified) Symbol * 1 : Recommendable value : 2.5 to 3.5N*m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5N*m (M6) Item E2 C1 Symbol VCES C/W C/W C/W 2MBI300N-120-01 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 700 700 600 600 500 500 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 400 300 200 100 300 200 100 0 0 0 1 2 3 4 5 0 2 3 4 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 5 Collector-Emitter voltage : VCE [V] 10 8 8 6 4 2 0 0 5 10 15 6 . t c u 4 d e u n i t n o c Dis 20 Gate-Emitter voltage : VGE [V] 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=125C Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=25C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 1 Collector-Emitter voltage : VCE [V] 10 Collector-Emitter voltage : VCE [V] 400 100 100 10 10 0 100 200 300 400 500 600 0 Collector current : Ic [A] http://store.iiic.cc/ 100 200 300 400 Collector current : Ic [A] 500 600 2MBI300N-120-01 IGBT Module Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 1000 25 800 20 600 15 400 10 200 5 100 0 1 0 10 500 1000 1500 2000 2500 3000 3500 0 4000 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 500 700 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 600 Forward current : IF [A] 500 400 300 200 100 0 0 1 2 4 Forward voltage : VF [V] 5 100 d e u n i t n o c s Di 3 . t c u 0 d o r p 100 200 300 400 500 600 Forward current : IF [A] Reversed biased safe operating area +VGE=15V, -VGE < = 15V, Tj < = 125C, RG > = 2.7 ohm Transient thermal resistance 3000 0.1 Collector current : Ic [A] Thermal resistance : Rth (j-c) [C/W] 2500 0.01 2000 1500 1000 500 0.001 0.001 0 0.01 0.1 1 0 200 400 600 800 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] http://store.iiic.cc/ 1000 1200 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25C Switching time vs. RG Vcc=600V, Ic=300A, VGE=15V, Tj=25C 2MBI300N-120-01 IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25C Switching loss vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V 125 100 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ/cycle] 100 75 50 25 10 1 0 0 100 200 300 400 500 0 600 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] Outline Drawings, mm Di d e u n i t n o c s . t c u http://store.iiic.cc/ d o r p 30 35